1SS293
Abstract: No abstract text available
Text: 1SS293 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS293 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse surrent : IR = 5 A (max) z Small package Absolute Maximum Ratings (Ta = 25°C) Characteristic
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1SS293
SC-61
1SS293
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TOSHIBA DIODE
Abstract: 1SS293
Text: 1SS293 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS293 Low Voltage High Speed Switching Unit: mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse surrent : IR = 5µA (max) Small package Maximum Ratings (Ta = 25°°C) Characteristic Symbol
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1SS293
TOSHIBA DIODE
1SS293
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Untitled
Abstract: No abstract text available
Text: 1SS293 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS293 Low-Voltage High-Speed Switching z Low forward voltage: VF 3 = 0.54 V (typ.) z Low reverse current: IR = 5 A (max) Unit: mm z Small package Absolute Maximum Ratings (Ta = 25°C) Characteristic
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1SS293
SC-61
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1SS293
Abstract: No abstract text available
Text: 1SS293 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS293 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse surrent : IR = 5µA (max) l Small package Maximum Ratings (Ta = 25°°C) Characteristic
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1SS293
1SS293
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1ss293
Abstract: No abstract text available
Text: 1SS293 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS293 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse surrent : IR = 5µA (max) Small package Maximum Ratings (Ta = 25°°C) Characteristic Symbol
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1SS293
SC-61
961001EAA2'
1ss293
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2fu smd transistor
Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A
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TPC6K01
HMG01
CRG02
CRG07
CRG03
CMG02
O-220SM
CRG01
CRG04
CMG03
2fu smd transistor
2FK transistor
3FV 60 43
smd diode Lz zener
HN2S02JE
CMZ24
CRS01
DF2S6.2S
1SV101
1SV283B
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TC7SZ08FU
Abstract: lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent
Text: General-Purpose Small-Signal Surface-Mount Devices PRODUCT GUIDE CONTENTS 1. Package Information 3 to 6 2. Small Signal Transistors and Diodes 2.1 New Products 2.2 Small-Signal Transistors 2.3 Bias Resistor Transistora BRTs 6.1 Single Output type 6.2 Dual Output type
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3407C-0209
TC7SZ08FU
lm2804
TC7S14F
sot-24 led
TC7SZ126FU
TC7SZ125FU
SOT-24
te85l F
TC7W04F
2sc2240 equivalent
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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RD91EB
Q2N4401
D1N3940
Q2N2907A
D1N1190
Q2SC1815
Q2N3055
Q2N1132
D1N750
D02CZ10
D1N751
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Untitled
Abstract: No abstract text available
Text: 1SS293 TO SHIBA TO SHIBA DIODE 1 SS293 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. • • • Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5fuA (Max.) Small Package 0.55M A X CTl 1.27 1.27
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1SS293
SS293
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1SS293
Abstract: No abstract text available
Text: TOSHIBA 1SS293 TOSHIBA DIODE 1 SS293 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING. 4 .2 M A X • • • Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 /j A (Max.) Small Package 0 .5 5 M A X
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1SS293
55MAX
961001EAA2'
1SS293
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1ss293
Abstract: No abstract text available
Text: TOSHIBA 1SS293 1SS29 3 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LOW VOLTAGE HIGH SPEED SWITCHING. 4.2MAX Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : I r = 5/¿A (Max.) Small Package 0.55MAX 0.4 MAXIMUM RATINGS (Ta = 25°C)
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1SS293
1SS29
55MAX
961001EAA2'
1ss293
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Untitled
Abstract: No abstract text available
Text: 1SS293 TO SHIBA TO SHIBA DIODE 1 SS293 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fuA (Max.) Small Package • • • = 25°C) CHARACTERISTIC
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1SS293
SS293
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1S1585
Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Text: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80
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OT-23MOD,
OT-143MOD.
1S1585
107YP
1SS239
1S1585 equivalent
1SV147
1ss193 equivalent
1SS SOT mark
1SS337 J9
1SV99
1SV103
1SS241
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2SKI34
Abstract: TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576
Text: [CATALOG 5VSTEMCATALOG SV5TEMCATALOG 5V5TEM CATALOG 5VSTEM C K T Q S rG A m .ro H IB f lp T E M CATALOG SV5TEM CATALOG 5VSTEM CATALOG S t 5 v llfflC A T A L O G SVSTEMCATALOG SVSTEMCATALOG SVSTEM CA SVSTEM CATALOG SVSTEM CATALOG 5V 5TE M CATALOG SVSTEM CATALOG S t
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J22587
90-3D
2SKI34
TA8515
westinghouse
TA8509F
CTC 313 transistor pin diagram
TOSHIBA DIODE CATALOG
T6950
TD62803
LSI LOGIC product catalog
TC8576
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diode Z47
Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
Text: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352
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HN2D01FU
HN2D02FU
OT-23MOD)
02CZ5
diode Z47
z43 diode
Z5.6
Z3.3
S360 DIODE
diode Z27
S368
diode zener z6
1s diode
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transistor k117
Abstract: transistor k363 K369 k117 transistor transistor k364 transistor K246 K30ATM k117 equivalent K363 transistor k246 transistor
Text: 10-1 Small Signal Transistors Mini-Package Type •c (m A ) f j T Y P . (M IN ) V C E (sat) M A X . hFE PC (mW) CCE IV ) >C im A ) ‘c IV ) im A ) !8 Im A ) (M Hz) V CE (V ) !C Im A ) 2SA 1048 2 SC 2 4 5 8 50 150 200 70 ~ 4 0 0 /7 00 6 2 0 .3 /0 .2 5 100
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2SC2458
2SC2459
2SC2710
2SC3267
2SC3378
2SC3488
75393P
75393S
75393F
transistor k117
transistor k363
K369
k117 transistor
transistor k364
transistor K246
K30ATM
k117 equivalent
K363 transistor
k246 transistor
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DIODE S4 29
Abstract: No abstract text available
Text: £•< K/Diodes J [ — K i^p p + S ^p p —R i l / L i s t of Diode E quivalent Products f f ^ t t i ; o t ' T £ ± l C - S S L T i ' & ' i ' i I £ 4 ' £ U ST<T>?\ <£< <r'{iJ5CQ±, c?i'„ The characteristics of the equivalent products do not always agree with those of the diode products. Therefore, be
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2sc 1203
Abstract: 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC 1207 N1408 2SC1815 NPN SOT-23
Text: 5. List of Lead Type and Surface Mount Type Interchangeable Products CTransistors for Low Frequency Small Signal Equipm ent> TO-92 VCEO k V (mA) N PN 50 150 2SC 1815 50 MINI PNP 2SA 1015 N PN 2SC 2458 SSM PNP 2S A 1048 2SA 1015L 2SC 2458L 2SA 1048L 100 2SC2240
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1815L
2SC2240
2SC1627
2SC752G
SC-70)
SC-59)
2SC2713
2SC4210
2SA1621
2SC4209
2sc 1203
2Sc1923 equivalent
2SK241 equivalent
2sa 1300 equivalent
2SC 1902
2sc2240 equivalent
2sc1815 equivalent
2SC 1207
N1408
2SC1815 NPN SOT-23
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