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    1SS352 Price and Stock

    Toshiba America Electronic Components 1SS352,H3F

    DIODE GEN PURP 80V 100MA SC76-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS352,H3F Reel 162,000 3,000
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    • 10000 $0.03005
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    1SS352,H3F Digi-Reel 160,320 1
    • 1 $0.15
    • 10 $0.094
    • 100 $0.15
    • 1000 $0.03663
    • 10000 $0.03663
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    1SS352,H3F Cut Tape 160,320 1
    • 1 $0.15
    • 10 $0.094
    • 100 $0.15
    • 1000 $0.03663
    • 10000 $0.03663
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    Avnet Americas 1SS352,H3F Reel 369,000 16 Weeks 3,000
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    • 10000 $0.01422
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    Mouser Electronics 1SS352,H3F 279,055
    • 1 $0.12
    • 10 $0.08
    • 100 $0.035
    • 1000 $0.032
    • 10000 $0.019
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    Arrow Electronics 1SS352,H3F Cut Strips 76 16 Weeks 1
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    • 100 $0.0212
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    TTI 1SS352,H3F Reel 24,000 3,000
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    • 10000 $0.016
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    Toshiba America Electronic Components 1SS352(TPH3.F)

    Diode Switching 85V 0.1A 2-Pin USC T/R - Tape and Reel (Alt: 1SS352(TPH3,F))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 1SS352(TPH3.F) Reel 16 Weeks 3,000
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    Toshiba America Electronic Components 1SS352(TH3,F,D)

    Diode Switching 85V 0.1A 2-Pin USC - Tape and Reel (Alt: 1SS352(TH3,F,D))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 1SS352(TH3,F,D) Reel 3,000
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    Quest Components 1SS352(TH3,F,D) 3,000
    • 1 $0.08
    • 10 $0.08
    • 100 $0.08
    • 1000 $0.05
    • 10000 $0.036
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    1SS352(TH3,F,D) 3,000
    • 1 $0.08
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    • 100 $0.08
    • 1000 $0.05
    • 10000 $0.036
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    Toshiba America Electronic Components 1SS352,H3F(T"

    Rectifier Diode Switching 85V 0.1A 4ns Automotive AEC-Q101 2-Pin USC T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 1SS352,H3F(T" 28,174 398
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    • 1000 $0.0439
    • 10000 $0.0389
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    Toshiba America Electronic Components 1SS352,H3F(B

    Diode Switching 85V 0.1A Automotive AEC-Q101 2-Pin USC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 1SS352,H3F(B 27,929 582
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    • 1000 $0.1257
    • 10000 $0.1158
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    1SS352,H3F(B 1,929 582
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    • 1000 $0.1257
    • 10000 $0.1257
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    Quest Components 1SS352,H3F(B 23,886
    • 1 $0.5
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    • 100 $0.5
    • 1000 $0.5
    • 10000 $0.0875
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    1SS352,H3F(B 23,886
    • 1 $0.5
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    • 100 $0.5
    • 1000 $0.5
    • 10000 $0.0875
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    Find more 1SS352 price and stock on Findchips.com

    1SS352 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS352 Kexin Ultra High Speed Switching Application Original PDF
    1SS352 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
    1SS352 Toshiba Japanese - Diodes Original PDF
    1SS352 TY Semiconductor Ultra High Speed Switching Application - SOD-323 Original PDF
    1SS352 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS352 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS352 Toshiba DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) Scan PDF
    1SS352 Toshiba DIODE Scan PDF
    1SS352,H3F Toshiba 1SS352 - Switching Diodes Original PDF
    1SS352(TH3,F,D) Toshiba 1SS352 - X34 PB-F USC M8 DIODE (LF), IFM=200MA Original PDF
    1SS352TH3FT Toshiba 1SS352TH3FT - Diode Switching 85V 0.1A 2-Pin USC T/R Original PDF
    1SS352TPH2 Toshiba 1SS352 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS352TPH3 Toshiba 1SS352 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS352(TPH3,F) Toshiba 1SS352 - DIODE 0.1 A, 85 V, SILICON, SIGNAL DIODE, USC, 1-1E1A, 2 PIN, Signal Diode Original PDF
    1SS352TPH4 Toshiba 1SS352 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS352TPHR2 Toshiba 1SS352 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS352TPHR3 Toshiba 1SS352 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS352TPHR4 Toshiba 1SS352 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF

    1SS352 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd diode UM

    Abstract: smd diode marking um 1SS352 marking Um diode smd diode UM 85 smd diode UM 16
    Text: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATION DIODE 1SS352 SOD-323 +0.1 1.3-0.1 Features +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Small Package Low forward voltage :VF 3 = 0.98 (Typ) :trr = 1.6ns (Typ) Small total capacitance :CT = 0.5 pF(Typ)


    Original     		PDF 1SS352 OD-323 smd diode UM smd diode marking um 1SS352 marking Um diode smd diode UM 85 smd diode UM 16

    1SS352

    Abstract: No abstract text available
    Text: 1SS352 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS352 Ultra High Speed Switching Application Unit: mm Small package Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.)


    Original     		PDF 1SS352 1SS352

    Untitled

    Abstract: No abstract text available
    Text: 1SS352 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS352 Ultra High Speed Switching Application Unit: mm l Small package l Low forward voltage : VF 3 = 0.98V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.5pF (typ.)


    Original     		PDF 1SS352 100mA

    1SS352

    Abstract: No abstract text available
    Text: 1SS352 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS352 Ultra High Speed Switching Application Unit: mm l Small package l Low forward voltage : VF 3 = 0.98V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.5pF (typ.)


    Original     		PDF 1SS352 1SS352

    Untitled

    Abstract: No abstract text available
    Text: 1SS352 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS352 Ultra High Speed Switching Application Unit: mm z Small package z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.5pF (typ.)


    Original     		PDF 1SS352

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS352 SOD-323 +0.1 1.3-0.1 Features +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Small Package Low forward voltage :VF 3 = 0.98 (Typ) :trr = 1.6ns (Typ) Small total capacitance :CT = 0.5 pF(Typ) 0.475 1.0max 0.375 +0.05 0.1-0.02


    Original     		PDF 1SS352 OD-323

    1SS352

    Abstract: No abstract text available
    Text: 1SS352 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS352 Ultra High Speed Switching Application Unit: mm z Small package z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.5pF (typ.)


    Original     		PDF 1SS352 1SS352

    1SS352

    Abstract: No abstract text available
    Text: 1SS352 SILICON EPITAXIAL PLANAR TYPE Ultra High Speed Switching Application Features • • PINNING Low forward voltage: PIN VF 3 = 0.98V (typ.) 1 Cathode 2 Anode Fast Reverse Recovery Time: trr = 1.6ns (typ.) • DESCRIPTION 2 1 Small Total Capacitance:


    Original     		PDF 1SS352 OD-323 OD-323 1SS352

    PIN DIODE MARKING CODE wk

    Abstract: wk marking code 1SS352
    Text: 1SS352 SILICON EPITAXIAL PLANAR DIODE PINNING Features • Low forward voltage • Fast Reverse Recovery Time • Small Total Capacitance DESCRIPTION PIN 1 Cathode 2 Anode 2 1 WK Application • Ultra High Speed Switching Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF 1SS352 OD-323 OD-323 PIN DIODE MARKING CODE wk wk marking code 1SS352

    Untitled

    Abstract: No abstract text available
    Text: 1SS352 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS352 Ultra High Speed Switching Application Unit in mm Small package Low forward voltage : VF 3 = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.)


    Original     		PDF 1SS352 961001EAA2'

    diode marking w2

    Abstract: marking code w2 1SS352 marking code w2 sod323 W2 SOD323 marking 25 SOD-323 "MARKING CODE W2" marking W2 Fast reverse recovery W2
    Text: 1SS352 SILICON EPITAXIAL PLANAR DIODE Features • Low forward voltage • Fast Reverse Recovery Time • Small Total Capacitance PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W2 Application • Ultra high speed switching Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF 1SS352 OD-323 OD-323 diode marking w2 marking code w2 1SS352 marking code w2 sod323 W2 SOD323 marking 25 SOD-323 "MARKING CODE W2" marking W2 Fast reverse recovery W2

    1SS352

    Abstract: No abstract text available
    Text: 1SS352 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS352 Ultra High Speed Switching Application Unit: mm z Small package z Low forward voltage : VF 3 = 0.98V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.5pF (typ.)


    Original     		PDF 1SS352 1SS352

    PIN DIODE MARKING CODE wk

    Abstract: MARKING MS SOD323 1SS352 wk marking diode
    Text: 1SS352 SILICON EPITAXIAL PLANAR DIODE PINNING Features • Low forward voltage • Fast Reverse Recovery Time • Small Total Capacitance DESCRIPTION PIN 1 Cathode 2 Anode 2 1 WK Application • Ultra High Speed Switching Absolute Maximum Ratings Ta = 25 OC


    Original     		PDF 1SS352 OD-323 OD-323 PIN DIODE MARKING CODE wk MARKING MS SOD323 1SS352 wk marking diode

    1SS352

    Abstract: No abstract text available
    Text: 1SS352 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS352 ○ 超高速スイッチング用 z z z z 単位: mm 2 端子小型外囲器なので､高密度実装に最適です。 順電圧特性が良い。 : VF 3 = 0.98V (標準)


    Original     		PDF 1SS352 100mA 1SS352

    1SS352 equivalent

    Abstract: 1SS352 HN2E05J RN2104F
    Text: HN2E05J TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E05J Unit: mm Super High Speed Switching Application Interface Circuit Driver Circuit Applications Q1 Since bias resistor is built in the transistor, the miniaturization of the apparatus by curtailment of the number of parts and laborsaving of


    Original     		PDF HN2E05J RN2104F 1SS352 1SS352 equivalent HN2E05J

    Untitled

    Abstract: No abstract text available
    Text: HN2E01F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E01F Super High Speed Switching Application Audio Frequency Amplifier Application General Switching Application Unit: mm Q1 Low Forward Voltage Drop : VF 3 =0.98V(typ.) Fast Reverse Recovery Time : trr=1.6ns(typ.)


    Original     		PDF HN2E01F 150mA 1SS352 2SC4666

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    Untitled

    Abstract: No abstract text available
    Text: 1SS352 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS352 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Small Package Low Forward Voltage : V f 3 = 0.98V (Typ.) Fast Reverse RecoveryTime : trr= 1.6ns (Typ.) Small Total Capacitance


    OCR Scan     		PDF 1SS352 20X20mm,

    marking CL

    Abstract: 1SS352
    Text: 1SS352 SILICON EPITAXIAL PLANAR T Y P E ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in ntn . Small Package . Low Forward Voltage V f = 0.98V Typ. . Fast Reverse Recovery Tine trr= l •6ns(Typ.) . Small Total Capacitance CT= 0 .5pF(Typ.) M A X I M U M RATINGS (Ta-25°C)


    OCR Scan     		PDF 1SS352 Ta-25 x20mm, 10tnA 100mA marking CL 1SS352

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS352 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SSB52 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Small Package Low Forward Voltage : Vp 3 = 0.98V (Typ.) Fast Reverse Recovery Time : trr= 1.6ns (Typ.) Small Total Capacitance : Crr=0.5pF (Typ.)


    OCR Scan     		PDF 1SS352 SSB52 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: 1SS352 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS352 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Small Package Low Forward Voltage : V f 3 = 0.98V (Typ.) Fast Reverse RecoveryTime : trr= 1.6ns (Typ.) Small Total Capacitance


    OCR Scan     		PDF 1SS352

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS352 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 S S 3 52 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm • Small Package • Low Forward Voltage V f 3 -0 .9 8 V (Typ.) • Fast Reverse Recovery Time tr r = 1.6ns (Typ.) • Small Total Capacitance


    OCR Scan     		PDF 1SS352 961001EAA2'

    TFSM

    Abstract: 1ss3 1SS352
    Text: 1SS352 TOSHIBA 1 SS352 T O S H IB A D IO D E SILICO N EPITA X IA L PLA N A R TYPE Unit in mm ULTRA H IG H SPEED S W IT C H IN G A P P L IC A T IO N . • • • • Small Package Low Forward Voltage VF 3 = 0.98V (Typ.) Fast Reverse Recovery Time trr—l-6ns (Typ.)


    OCR Scan     		PDF 1SS352 20X20mm, 961001EAA2' TFSM 1ss3 1SS352

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737