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    1SS396 Price and Stock

    Toshiba America Electronic Components 1SS396,LF

    DIODE ARR SCHOTT 40V 70MA SMINI
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    DigiKey 1SS396,LF Cut Tape 17,104 1
    • 1 $0.33
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    1SS396,LF Digi-Reel 17,104 1
    • 1 $0.33
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    1SS396,LF Reel 9,000 3,000
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    Mouser Electronics 1SS396,LF 12,254
    • 1 $0.25
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    Verical 1SS396,LF 6,046 131
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    Arrow Electronics 1SS396,LF Cut Strips 6,046 20 Weeks 1
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    TTI 1SS396,LF Reel 3,000
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    Toshiba America Electronic Components 1SS396 LF

    Diode Schottky Barrier 45V 0.1A 3-Pin TO-236MOD - Tape and Reel (Alt: 1SS396,LF)
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    Avnet Americas 1SS396 LF Reel 9,000 20 Weeks 3,000
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    Toshiba America Electronic Components 1SS396,LF(B

    Diode Small Signal Schottky 45V 0.1A 3-Pin S-Mini T/R
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    Verical 1SS396,LF(B 6,000 782
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    1SS396,LF(B 100 100
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    Quest Components 1SS396,LF(B 4,880
    • 1 $0.51
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    • 10000 $0.102
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    Toshiba America Electronic Components 1SS396,LF(T

    Diode Small Signal Schottky 45V 0.1A 3-Pin S-Mini T/R
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    Verical 1SS396,LF(T 5,014 537
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    Newark 1SS396,LF(T Cut Tape 3,000 5
    • 1 $0.292
    • 10 $0.225
    • 100 $0.106
    • 1000 $0.059
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    Avnet Asia 1SS396,LF(T 24 Weeks 3,000
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    Chip One Stop 1SS396,LF(T Cut Tape 2,114
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    1SS396,LF(T Cut Tape 2
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    Toshiba America Electronic Components 1SS396(TE85L,F)

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    Quest Components 1SS396(TE85L,F) 7,515
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    • 10000 $0.175
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    EBV Elektronik 1SS396(TE85L,F) 27 Weeks 3,000
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    Find more 1SS396 price and stock on Findchips.com

    1SS396 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS396 Kexin Low Voltage High Speed Switching Original PDF
    1SS396 Toshiba shottky barrier diode Original PDF
    1SS396 TY Semiconductor Low Voltage High Speed Switching - SOT-23 Original PDF
    1SS396 Toshiba DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) Scan PDF
    1SS396 Toshiba DIODE Scan PDF
    1SS396,LF Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTKY 40V 70MA SMINI Original PDF
    1SS396(T5L,F,T) Toshiba 1SS396 - Diode Small Signal Schottky 45V 0.1A 3-Pin SOT-23 T/R Original PDF

    1SS396 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse current : IR = 5µA (max.) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic


    Original     		1SS396 SC-59 O-236MOD 100mA PDF

    SMD MARKING T9

    Abstract: marking t9 sot-23 1SS396 marking t9
    Text: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS396 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage :VF =0.23V Typ . 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A(Max.) +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		1SS396 OT-23 SMD MARKING T9 marking t9 sot-23 1SS396 marking t9 PDF

    1SS396

    Abstract: No abstract text available
    Text: 1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max.) z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C)


    Original     		1SS396 SC-59 10mlled 1SS396 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max.) z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C)


    Original     		1SS396 SC-59 PDF

    1SS396

    Abstract: No abstract text available
    Text: 1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switching Unit: mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse current : IR = 5µA (max.) Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic


    Original     		1SS396 SC-59 1SS396 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse current : IR = 5µA (max.) Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic


    Original     		1SS396 SC-59 PDF

    1SS396

    Abstract: TO-236MOD 000707EAA
    Text: 1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.54V (typ.) l Low reverse current : IR = 5µA (max.) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic


    Original     		1SS396 SC-59 1SS396 TO-236MOD 000707EAA PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switching Unit: mm z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max.) z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C)


    Original     		1SS396 SC-59 PDF

    TO-236MOD

    Abstract: 1SS396 SP-150
    Text: 1SS396 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS396 ○ 低電圧高速スイッチング用 : : : z 外形が小さい。 z 順方向電圧が低い。 z 逆電流が小さい。 単位: mm SC–59 VF 3 = 0.54V (標準)


    Original     		1SS396 236MOD 100mA TO-236MOD 1SS396 SP-150 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS396 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage :VF =0.23V Typ . 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A(Max.) +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Low reverse current: IR = 5


    Original     		1SS396 OT-23 PDF

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24 PDF

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R PDF

    transistor t348

    Abstract: transistor t349 transistor t342 t326 Transistor GRM40F104Z50PT diode t318 t324 transistor t345 diode T207 DIODE t349 diode
    Text: MF1556-02 On-The-Go Device Controller LSI S1R72005 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.


    Original     		MF1556-02 S1R72005 transistor t348 transistor t349 transistor t342 t326 Transistor GRM40F104Z50PT diode t318 t324 transistor t345 diode T207 DIODE t349 diode PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 PDF

    LT 543 common cathode

    Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current


    Original     		2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor PDF

    transistor SMD s72

    Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
    Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той


    Original     		OT323 BC818W MUN5131T1. BC846A SMBT3904, MVN5131T1 SMBT3904 OT323 transistor SMD s72 nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p PDF

    transistor t348

    Abstract: transistor t349 t345 diode transistor t342 T328 GRM40F104Z50PT diode t318 S M T209 ttl 7436 T203 DIODE
    Text: 82C871 USB 2.0 82C871 On-The-Go Controller Data Book 912-2003-001 Revision 1.1 25 March 2003 Rev.1.1 OPTi Technologies, Inc. Page 1 Copyright Copyright 2003 OPTi Technologies, Inc. All rights reserved. No part of this publication may be reproduced, transmitted,


    Original     		82C871 82C871 20-pin) 23-pin) VTEST01 VTEST11 transistor t348 transistor t349 t345 diode transistor t342 T328 GRM40F104Z50PT diode t318 S M T209 ttl 7436 T203 DIODE PDF

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


    Original     		TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558 PDF

    CMZB220

    Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
    Text: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード


    Original     		SCJ0004R TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 CMZB220 CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS396 TOSHIBA TOSHIBA DIODE 1SS39 6 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LOW VOLTAGE HIGH SPEED SWITCHING 0.5 2 5 0.3 + 0.25 + . - Low Forward Voltage Low Reverse Current Small Package V f 3 —0.54V (Typ.) I r = 5/¿A (Max.) SC-59 ,1.5-0.15


    OCR Scan     		1SS396 1SS39 SC-59 PDF

    1SS396

    Abstract: i300n
    Text: TOSHIBA 1SS396 TOSHIBA DIODE 1 SS3 9 6 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING +0.5 2.5-0.3 • • • Low Forward Voltage Low Reverse Current Small Package VF 3 - 0.54V (Typ.) I r = 5/¿A (Max.) SC-59 -H M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		1SS396 SC-59 1SS396 i300n PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS396 TO SHIBA TOSHIBA DIODE 1 SS396 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING + 0.5 2.5-0.3 • • • Low Forward Voltage Low Reverse Current Small Package + 0.25 .1.5-0.15 VF 3 = 0.54V (Typ.) Ir = 5/*A (Max.)


    OCR Scan     		1SS396 SS396 SC-59 PDF