1SS416TS Search Results

1SS416TS Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
1SS416TS		Toshiba	1SS416 - DIODE 0.1 A, 35 V, SILICON, SIGNAL DIODE, FSC2, 1-1X1A, 2 PIN, Signal Diode		Original	PDF

1SS416TS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
1SS416TS Abstract: No abstract text available Text: 1SS416TS 東芝ダイオードシリコンエピタキシャルショットキバリア形 1SS416TS ○ 高速スイッチング用単位: mm z 2 端子小型外囲器なので高密度実装に最適です。 z 順方向電圧が低い。 : VF = 0.24V 標準 @IF = 5mA	Original	1SS416TS 20mmx20mm, 1SS416TS	PDF
Untitled Abstract: No abstract text available Text: 1SS416TS TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416TS High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF = 0.24V typ. @IF = 5mA 0.6±0.05 Reverse voltage VRM 35 V VR 30 V Maximum (peak) forward current IFM	Original	1SS416TS	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

1SS416TS

Abstract: No abstract text available
Text: 1SS416TS 東芝ダイオードシリコンエピタキシャルショットキバリア形 1SS416TS ○ 高速スイッチング用単位: mm z 2 端子小型外囲器なので高密度実装に最適です。 z 順方向電圧が低い。 : VF = 0.24V 標準 @IF = 5mA

Original

1SS416TS 20mmx20mm, 1SS416TS

PDF

Untitled

Abstract: No abstract text available
Text: 1SS416TS TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416TS High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF = 0.24V typ. @IF = 5mA 0.6±0.05 Reverse voltage VRM 35 V VR 30 V Maximum (peak) forward current IFM

Original

1SS416TS

PDF