Untitled
Abstract: No abstract text available
Text: Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead Pb Free Product - RoHS Compliant SFH 203 P SFH 203 PFA SFH 203 P SFH 203 PFA Wesentliche Merkmale Features • Wellenlängenbereich (S10%) 400nm bis 1100nm (SFH 203 P) und 750nm bis 1100nm (SFH 203 PFA)
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400nm
1100nm
750nm
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GEO06645
Abstract: Q62702-P955 Q62702-P956 SFH203
Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 203 SFH 203 FA SFH 203 SFH 203 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 203 und bei 880 nm (SFH 203 FA)
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OHR00883
OHF01026
GEO06645
GEO06645
Q62702-P955
Q62702-P956
SFH203
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Untitled
Abstract: No abstract text available
Text: 2014-01-10 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.1 SFH 203 P, SFH 203 PFA SFH 203 P Features: SFH 203 PFA Besondere Merkmale: • Wavelength range S10% 400 nm to 1100 nm (SFH 203 P) and 750 nm to 1100 nm (SFH 203 PFA) • Short switching time (typ. 5 ns)
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D-93055
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SFH203
Abstract: SFH203P
Text: 2011-10-20 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.0 SFH 203 P, SFH 203 PFA SFH 203 P Features: SFH 203 PFA Besondere Merkmale: • Wavelength range S10% 400 nm to 1100 nm (SFH 203 P) and 750 nm to 1100 nm (SFH 203 PFA) • Short switching time (typ. 5 ns)
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D-93055
SFH203
SFH203P
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850 nm LED
Abstract: sfh203fa GEOY6645 Q62702-P955 Q62702-P956
Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 203 SFH 203 FA SFH 203 SFH 203 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 203 und bei
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foto transistor
Abstract: 850 nm LED FA 600 GEOY6645 Q62702-P955 Q62702-P956 photointerrupters
Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 203 SFH 203 FA SFH 203 SFH 203 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 203 und bei
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850 nm LED
Abstract: GEOY6648 Q62702-P946 Q62702-P947 A T R Industrie-Elektronik GmbH
Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 203 P SFH 203 PFA SFH 203 P SFH 203 PFA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 203 P und bei
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GEOY6648
Abstract: Q62702-P947
Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 203 P SFH 203 PFA SFH 203 P SFH 203 PFA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 203 P und bei
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GEO06648
Abstract: Q62702-P946 Q62702-P947 SFH203P 203 OPTO
Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 203 P SFH 203 PFA SFH 203 P SFH 203 PFA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 203 P und bei
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GEO06648
GEO06648
Q62702-P946
Q62702-P947
SFH203P
203 OPTO
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SFH203
Abstract: SFH 203
Text: 2011-10-20 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.0 SFH 203, SFH 203 FA SFH 203 SFH 203 FA Features: Besondere Merkmale: • Wavelength range S10% 400 nm to 1100 nm (SFH 203) and 750 nm to 1100 nm (SFH 203FA) • Short switching time (typ. 5 ns)
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203FA)
SFH203)
SFH203FA)
D-93055
SFH203
SFH 203
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Untitled
Abstract: No abstract text available
Text: 2014-01-10 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.1 SFH 203, SFH 203 FA SFH 203 SFH 203 FA Features: Besondere Merkmale: • Wavelength range S10% 400 nm to 1100 nm (SFH 203) and 750 nm to 1100 nm (SFH 203FA) • Short switching time (typ. 5 ns)
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203FA)
SFH203)
SFH203FA)
D-93055
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Q62702P0956
Abstract: 850 nm LED GEOY6645 OHLY0598
Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time Lead Pb Free Product - RoHS Compliant SFH 203 SFH 203 FA SFH 203 SFH 203 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich
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Q62702P0955
Abstract: 850 nm LED GEOY6645 OHLY0598 Q62702P0956
Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time Lead Pb Free Product - RoHS Compliant SFH 203 SFH 203 FA SFH 203 SFH 203 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich
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Q62702P0956
Abstract: sfh203fa SFH203 RoHS SFH203
Text: Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead Pb Free Product - RoHS Compliant SFH 203 SFH 203 FA SFH 203 SFH 203 FA Wesentliche Merkmale Features • Wellenlängenbereich (S10%) 400nm bis 1100nm (SFH203) und 750nm bis 1100nm (SFH203FA) • Kurze Schaltzeit (typ. 5 ns)
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400nm
1100nm
SFH203)
750nm
SFH203FA)
203FA)
Q62702P0955
Q62702P0956
sfh203fa
SFH203 RoHS
SFH203
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850 nm LED
Abstract: GEOY6648 OHLY0598
Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time Lead Pb Free Product - RoHS Compliant SFH 203 P SFH 203 PFA SFH 203 P SFH 203 PFA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich
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anti-reflection coating
Abstract: C45N OC-768
Text: IPAG - Innovative Processing AG Product Overview Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com Series IPD48 PIN Diode The Series IPD48 PINs are applicable for building the next generation of high bit rate optoelectronic receivers for SONET/SDH
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D-47057
ipag35
IPD48
IPD48
OC-768)
PO-IPD48-0002
anti-reflection coating
C45N
OC-768
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10 GHz pin diode
Abstract: diode all 4606 C10B C10N
Text: IPAG - Innovative Processing AG Data Sheet Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com IPD12_C10Z: 10 GHz PIN Diode Chip Applications The series IPD12 PINs are applicable for building high bit rate, 10 Gbit/s opto-electronic receivers for
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D-47057
ipag35
IPD12
Responsiv75
DS-IPD12
C10Z-0004
10 GHz pin diode
diode all
4606
C10B
C10N
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20 GHz PIN diode
Abstract: diode all C20B C20N
Text: IPAG - Innovative Processing AG Data Sheet Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com IPD12_C20Z: 20 GHz PIN Diode Chip Applications The series IPD12 PINs are applicable for building up high bit rate (10 Gbit/s NRZ and RZ) optoelectronic receivers for SONET/SDH and Ethernet applications.
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D-47057
ipag35
IPD12
Dependen75
DS-IPD12
C20Z-0004
20 GHz PIN diode
diode all
C20B
C20N
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diode all
Abstract: 4606 C15B C15N
Text: IPAG - Innovative Processing AG Data Sheet Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com IPD12_C15Z: 15 GHz PIN Diode Chip Applications The series IPD12 PINs are applicable for building up high bit rate (10 Gbit/s NRZ and RZ) optoelectronic receivers for SONET/SDH and Ethernet applications.
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D-47057
ipag35
IPD12
Dependen75
DS-IPD12
C15Z-0004
diode all
4606
C15B
C15N
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diode all
Abstract: 4606 C40B C40N OC-768
Text: IPAG - Innovative Processing AG Data Sheet Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com IPD48_C40Z: 40 GHz PIN Diode Chip Applications The series IPD48 PINs are applicable for building up the next generation of high bit rate optoelectronic receivers for SONET/SDH (OC-768) including FEC and Ethernet applications.
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D-47057
ipag35
IPD48
OC-768)
Power75
DS-IPD48
C40Z-0002
diode all
4606
C40B
C40N
OC-768
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diode all
Abstract: 4606 C45B C45N OC-768 IPD48-C45N
Text: IPAG - Innovative Processing AG Data Sheet Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com IPD48_C45Z: 45 GHz PIN Diode Chip Applications The series IPD48 PINs are applicable for building up the next generation of high bit rate optoelectronic receivers for SONET/SDH (OC-768) including FEC and Ethernet applications.
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D-47057
ipag35
IPD48
OC-768)
Pow75
DS-IPD48
C45Z-0002
diode all
4606
C45B
C45N
OC-768
IPD48-C45N
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60 GHz PIN diode
Abstract: 4606 diode all C60B C60N C60Z OC-768 IPD48
Text: IPAG - Innovative Processing AG Data Sheet Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com IPD48_C60Z: 60 GHz PIN Diode Chip Applications The series IPD48 PINs are applicable for building up the next generation of high bit rate optoelectronic receivers for SONET/SDH (OC-768) including FEC and Ethernet applications.
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D-47057
ipag35
IPD48
OC-768)
Power75
DS-IPD48
C60Z-0002
60 GHz PIN diode
4606
diode all
C60B
C60N
C60Z
OC-768
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diode all
Abstract: C80N OC-768
Text: IPAG - Innovative Processing AG Data Sheet Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com IPD48_C80Z: 80 GHz PIN Diode Chip Applications The series IPD48 PINs are applicable for building up the next generation of high bit rate optoelectronic receivers for SONET/SDH (OC-768) including FEC and Ethernet applications.
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D-47057
ipag35
IPD48
OC-768)
80GHz.
DS-IPD48
C80Z-0002
diode all
C80N
OC-768
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C15N
Abstract: No abstract text available
Text: IPAG - Innovative Processing AG Product Overview Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com Series IPD12 PIN Diode The Series IPD12 The series IPD12 PINs are applicable for building high bit rate (10 Gbit/s NRZ and
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D-47057
ipag35
IPD12
IPD12
PO-IPD12-0004
C15N
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