IPD12 Search Results

IPD12 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TIPD128		Texas Instruments	Capacitive Load Drive Verified Reference Design Using an Isolation Resistor

IPD12 Price and Stock

Filter by Manufacturer


Infineon Technologies AG IPD122N10N3GATMA1 MOSFET N-CH 100V 59A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD122N10N3GATMA1	Digi-Reel	43,108		1	1 $2.16 10 $1.381 100 $2.16 1000 $0.6877 10000 $0.6877	Buy Now
	IPD122N10N3GATMA1	Cut Tape	43,108		1	1 $2.16 10 $1.381 100 $2.16 1000 $0.6877 10000 $0.6877	Buy Now
	IPD122N10N3GATMA1	Reel	40,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.60712	Buy Now
Avnet Americas	IPD122N10N3GATMA1	Reel	15,000	16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IPD122N10N3GATMA1		34,147			1 $1.4 10 $1 100 $0.787 1000 $0.621 10000 $0.593	Buy Now
Verical	IPD122N10N3GATMA1		5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.6007	Buy Now
Arrow Electronics	IPD122N10N3GATMA1		5,000	16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.6019	Buy Now
	IPD122N10N3GATMA1	Cut Strips	1,946	16 Weeks	1	1 $0.8396 10 $0.7169 100 $0.6262 1000 $0.5189 10000 $0.5189	Buy Now

Newark	IPD122N10N3GATMA1	Cut Tape	15,275		1	1 $0.392 10 $0.392 100 $0.392 1000 $0.392 10000 $0.392	Buy Now
Bristol Electronics	IPD122N10N3GATMA1		99			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	IPD122N10N3GATMA1				1	1 $0.6746 10 $0.6746 100 $0.6341 1000 $0.5734 10000 $0.5734	Buy Now
Chip1Stop	IPD122N10N3GATMA1	Cut Tape	1,996			1 $0.747 10 $0.644 100 $0.567 1000 $0.468 10000 $0.468	Buy Now
EBV Elektronik	IPD122N10N3GATMA1			17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IPD12CN10NGATMA1 MOSFET N-CH 100V 67A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD12CN10NGATMA1	Cut Tape	7,117		1	1 $2.33 10 $1.496 100 $2.33 1000 $0.75215 10000 $0.75215	Buy Now
	IPD12CN10NGATMA1	Digi-Reel	7,117		1	1 $2.33 10 $1.496 100 $2.33 1000 $0.75215 10000 $0.75215	Buy Now
	IPD12CN10NGATMA1	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.67512	Buy Now
Mouser Electronics	IPD12CN10NGATMA1		1,273			1 $1.73 10 $1.23 100 $0.902 1000 $0.705 10000 $0.665	Buy Now
Verical	IPD12CN10NGATMA1		37,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.6621	Buy Now
	IPD12CN10NGATMA1		12,500		426	1 - 10 - 100 - 1000 $0.797 10000 $0.797	Buy Now
	IPD12CN10NGATMA1		2,485		23	1 - 10 - 100 $1.3625 1000 $1.3625 10000 $1.2875	Buy Now
	IPD12CN10NGATMA1		205		11	1 - 10 - 100 $0.7087 1000 $0.6786 10000 $0.6786	Buy Now
Arrow Electronics	IPD12CN10NGATMA1		37,500	16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.6621	Buy Now
	IPD12CN10NGATMA1	Cut Strips	205	16 Weeks	1	1 $0.9692 10 $0.847 100 $0.7087 1000 $0.6786 10000 $0.6786	Buy Now
Newark	IPD12CN10NGATMA1	Cut Tape	4,308		1	1 $1.74 10 $1.24 100 $0.91 1000 $0.714 10000 $0.714	Buy Now

Rochester Electronics	IPD12CN10NGATMA1		12,500		1	1 $0.7501 10 $0.7501 100 $0.7051 1000 $0.6376 10000 $0.6376	Buy Now
TME	IPD12CN10NGATMA1		1,984		1	1 $1.47 10 $1.26 100 $0.99 1000 $0.9 10000 $0.9	Buy Now
Chip1Stop	IPD12CN10NGATMA1	Cut Tape	2,485			1 $1.01 10 $1.01 100 $1 1000 $1 10000 $1	Buy Now
EBV Elektronik	IPD12CN10NGATMA1			17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samtec Inc IPD1-20-D CONN RCPT HSG 40POS 2.54MM Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD1-20-D	Bulk	449		1	1 $1.86 10 $1.512 100 $1.2322 1000 $1.00466 10000 $0.9288	Buy Now
Avnet Americas	IPD1-20-D	Bulk	178	10 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IPD1-20-D		368			1 $2.56 10 $2.08 100 $1.8 1000 $1.34 10000 $1.25	Buy Now
Verical	IPD1-20-D		1,375		25	1 - 10 - 100 $2.775 1000 $1.8179 10000 $1.8179	Buy Now
Newark	IPD1-20-D	Bulk			1	1 $1.64 10 $1.48 100 $1.26 1000 $0.906 10000 $0.788	Buy Now

Component Electronics, Inc	IPD1-20-D		9			1 $3.08 10 $3.08 100 $2.31 1000 $2 10000 $2	Buy Now
Samtec Inc IPD1-25-D-K-M CONN RCPT HSG 50POS 2.54MM Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD1-25-D-K-M	Tube	355		1	1 $5.78 10 $5.78 100 $3.08 1000 $2.6 10000 $2.35	Buy Now
Mouser Electronics	IPD1-25-D-K-M		59			1 $3.76 10 $3.76 100 $3.31 1000 $2.13 10000 $2.04	Buy Now
Verical	IPD1-25-D-K-M		40		2	1 - 10 $5.78 100 $5.78 1000 $5.78 10000 $5.78	Buy Now
Newark	IPD1-25-D-K-M	Bulk			1	1 $4.49 10 $4.29 100 $3.6 1000 $2.58 10000 $2.33	Buy Now
Powell Electronics	IPD1-25-D-K-M		26		1	1 $5.78 10 $5.78 100 $3.08 1000 $2.72 10000 $2.72	Buy Now
Samtec Inc IPD1-25-D-K CONN RCPT HSG 50POS 2.54MM Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD1-25-D-K	Bulk	264		1	1 $2.39 10 $1.947 100 $1.5871 1000 $1.29404 10000 $1.225	Buy Now
Avnet Americas	IPD1-25-D-K	Bulk	116	10 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IPD1-25-D-K		515			1 $2.24 10 $2.17 100 $2.17 1000 $1.47 10000 $1.25	Buy Now
Verical	IPD1-25-D-K		825		25	1 - 10 - 100 $2.795 1000 $1.859 10000 $1.859	Buy Now
Arrow Electronics	IPD1-25-D-K		1	14 Weeks	1	1 $1.0056 10 $1.0056 100 $0.4138 1000 $0.3333 10000 $0.1954	Buy Now

Newark	IPD1-25-D-K	Bulk	693		1	1 $1.7 10 $1.54 100 $1.32 1000 $0.943 10000 $0.82	Buy Now

Find more IPD12 price and stock on Findchips.com

IPD12 Datasheets (36)

Part	Manufacturer	Description	Datasheet Type	PDF
IPD12000	Net to Net Technologies	DSLAM Stackable DC 14 slot	Original	PDF
IPD1-20-D	Samtec	Rectangular Connectors - Housings, Connectors, Interconnects, CONN RECEPT .100" 40POS	Original	PDF
IPD1-20-D-K	Samtec	Connectors, Interconnects - Rectangular Connectors - Housings - MINI-POWER CONN	Original	PDF
IPD1-20-D-K-M	Samtec	Connectors, Interconnects - Rectangular Connectors - Housings - MINI-POWER CONNECTOR	Original	PDF
IPD122N10N3 G	Infineon Technologies	N-Channel MOSFETs (20V - 250V); Package: PG-TO252-3; Package: DPAK (TO-252); V_DS (max): 100.0 V; R_{DS (on)} (max) (@10V): 12.2 mOhm; R_{DS (on)} (max) (@4.5V): -; I_D (max): 59.0 A;	Original	PDF
IPD122N10N3GATMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 59A	Original	PDF
IPD122N10N3GBTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 59A TO252-3	Original	PDF
IPD1-25-D	Samtec	Rectangular Connectors - Housings, Connectors, Interconnects, CONN HOUSING 50 POS 2.54MM ST	Original	PDF
IPD1-25-D-K	Samtec	Connectors, Interconnects - Rectangular Connectors - Housings - MINI-POWER CONN	Original	PDF
IPD127N06LG	Infineon Technologies	OptiMOS Power-Transistor	Original	PDF
IPD127N06LG	Infineon Technologies	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 50A TO-252	Original	PDF
IPD127N06LGBTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 50A TO-252	Original	PDF
IPD12-C10B	Innovative Processing AG	10 GHz PIN Diode Chip	Original	PDF
IPD12-C10N	Innovative Processing AG	10 GHz PIN Diode Chip	Original	PDF

IPD12-C10X	Innovative Processing AG	PIN Diode	Original	PDF
IPD12-C15B	Innovative Processing AG	15 GHz PIN Diode Chip	Original	PDF
IPD12-C15X	Innovative Processing AG	PIN Diode	Original	PDF
IPD12-C20B	Innovative Processing AG	20 GHz PIN Diode Chip	Original	PDF
IPD12-C20N	Innovative Processing AG	20 GHz PIN Diode Chip	Original	PDF
IPD12-C20X	Innovative Processing AG	PIN Diode	Original	PDF

IPD12 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
12CN10N Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 GS250 IPD12CN10 Text: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)	Original	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 GS250 IPD12CN10	PDF
12N03L Abstract: No abstract text available Text: Type OptiMOS 2 Power-Transistor IPD12N03LB G IPS12N03LB G IPU12N03LB G IPF12N03LB G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 11.6 mΩ ID 30 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)	Original	IPD12N03LB IPS12N03LB IPU12N03LB IPF12N03LB PG-TO252-3-11 PG-TO251-3-11 12N03L	PDF
C15N Abstract: No abstract text available Text: IPAG - Innovative Processing AG Product Overview Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com Series IPD12 PIN Diode The Series IPD12 The series IPD12 PINs are applicable for building high bit rate (10 Gbit/s NRZ and	Original	D-47057 ipag35 IPD12 IPD12 PO-IPD12-0004 C15N	PDF
12N03L Abstract: 12N03 Text: IPD12N03L Preliminary data OptiMOS =Buck converter series Product Summary Feature N-Channel Logic Level Low on-resistance RDS on Excellent Gate Charge x RDS(on) product (FOM) 30 VDS RDS(on) ID V m 10.4 30 A P-TO252 Superior thermal resistance	Original	IPD12N03L P-TO252 IPD12N03L P-TO252 Q67040-S4342 12N03L 20ents 12N03L 12N03	PDF
12CN10N Abstract: No abstract text available Text: IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO252) 12.4 mW ID • Very low on-resistance R DS(on)	Original	IPB12CN10N IPD12CN10N IPI12CN10N IPP12CN10N IEC61249-2-21 PG-TO263-3 12CN10N	PDF
marking EB5 Abstract: diode marking eb5 marking G9 Text: IPD122N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H ( J R , ? >=1H )& Y" -1 I 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D	Original	IPD122N10N3 7865AE5 marking EB5 diode marking eb5 marking G9	PDF
12CN10N Abstract: IPI12CN10N IPP12CN10N PG-TO220-3 diode d335 12CN10 Text: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)	Original	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 diode d335 12CN10	PDF
12CN10N Abstract: IPP12CN10N IPI12CN10N PG-TO220-3 d67a Text: IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS 2 Power-Transistor Features Product Summary • N-channel, normal level V DS 100 V R DS on ,max (TO252) 12.4 mΩ • Excellent gate charge x R DS(on) product (FOM) ID • Very low on-resistance R DS(on)	Original	IPB12CN10N IPD12CN10N IPI12CN10N IPP12CN10N PG-TO263-3 PG-TO252-3 12CN10N PG-TO220-3 d67a	PDF
12N03L Abstract: IPD12N03L IPU12N03L 12n03 ANPS071E P- TO252 -3-11 Text: IPD12N03L IPU12N03L OptiMOS Buck converter series Product Summary Feature VDS •N-Channel 30 •Logic Level RDS on •Low On-Resistance RDS(on) ID •Excellent Gate Charge x R DS(on) product (FOM) V 10.4 mΩ 30 P- TO251 -3-1 A P- TO252 -3-11 •Superior thermal resistance	Original	IPD12N03L IPU12N03L Q67040-S4342 12N03L Q67042-S4043 12N03L IPD12N03L IPU12N03L 12n03 ANPS071E P- TO252 -3-11	PDF
ip dslam Abstract: IPD12000 DSLAM configuration Text: IP DSL Access Multiplexer 12000 IPD12000 IPD12000 Native IP DSLAM The IP DSLAM for large scale Central Office or MDU/Campus deployments Overview Features Utilizes Net to Net’s IPacket A rc h i t e c t u re Net to Net Technologies’ IP DSL Access Multiplexer is the indus	Original	IPD12000 UL1950 -200ft 500ft) ip dslam IPD12000 DSLAM configuration	PDF
122N10N Abstract: No abstract text available Text: IPD122N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 12.2 mW ID 59 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant	Original	IPD122N10N3 IEC61249-2-21 PG-TO252-3 122N10N 122N10N	PDF
Untitled Abstract: No abstract text available Text: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N PG-TO263-3 PG-TO252-3	PDF
122N10N Abstract: IPD122N10N3 G JESD22 Text: IPD122N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 12.2 mΩ 59 ID A • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	IPD122N10N3 PG-TO252-3 122N10N 122N10N IPD122N10N3 G JESD22	PDF
Untitled Abstract: No abstract text available Text: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N PG-TO263-3 12CNE8N	PDF

Untitled Abstract: No abstract text available Text: IPD122N10N3 G TM 3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H ( J R ,?>=1H฀ )& Y I ฀ -1 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀ ฀T฀?@5B1D9>7฀D5=@5B1DEB5	Original	IPD122N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à	PDF
127n06l Abstract: IPD127N06L Text: IPD127N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level 60 R DS on ,max 12.7 ID 50 V mΩ A • 175 °C operating temperature • Avalanche rated	Original	IPD127N06L PG-TO252-3 127N06L 127n06l	PDF
12N03L Abstract: 12n03lb 12n03 IPD12N03LB PG-TO252-3-11 Text: Type OptiMOS 2 Power-Transistor IPD12N03LB G IPS12N03LB G IPU12N03LB G IPF12N03LB G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 11.6 mΩ ID 30 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)	Original	IPD12N03LB IPS12N03LB IPU12N03LB IPF12N03LB PG-TO252-3-11 PG-TO251-3-11 12N03L 12n03lb 12n03 PG-TO252-3-11	PDF
infineon marking TO-252 Abstract: IEC61249-2-21 IPD12CNE8N IPP12CNE8N PG-TO220-3 12CNE8N Text: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N IEC61249-2-21 PG-TO263-3 infineon marking TO-252 IEC61249-2-21 PG-TO220-3 12CNE8N	PDF
12CN10N Abstract: 12CN10 diode d335 d67a IPP12CN10N D-335 IPD12CN10NG IPB12CN10N G Text: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 12.4 mΩ ID 67 A • Very low on-resistance R DS(on)	Original	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 12CN10N 12CN10N 12CN10 diode d335 d67a D-335 IPD12CN10NG IPB12CN10N G	PDF
12CN10N Abstract: No abstract text available Text: OptiMOS 2 Power-Transistor IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO252) 12.4 m: • Excellent gate charge x R DS(on) product (FOM) ID 67 A • Very low on-resistance R DS(on)	Original	IPB12CN10N IPI12CN10N IPD12CN10N IPP12CN10N PG-TO263-3 12CN10N 12CN10N	PDF
12N03L Abstract: 12N03LB IPD12N03LB PG-TO252-3-11 12n03 Text: Type OptiMOS 2 Power-Transistor IPD12N03LB G IPS12N03LB G IPU12N03LB G IPF12N03LB G Product Summary Package Marking • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max 11.6 mΩ ID 30 A • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM)	Original	IPD12N03LB IPS12N03LB IPU12N03LB IPF12N03LB PG-TO252-3-11 PG-TO251-3-11 12N03L 12N03LB PG-TO252-3-11 12n03	PDF
10 GHz pin diode Abstract: diode all 4606 C10B C10N Text: IPAG - Innovative Processing AG Data Sheet Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com IPD12_C10Z: 10 GHz PIN Diode Chip Applications The series IPD12 PINs are applicable for building high bit rate, 10 Gbit/s opto-electronic receivers for	Original	D-47057 ipag35 IPD12 Responsiv75 DS-IPD12 C10Z-0004 10 GHz pin diode diode all 4606 C10B C10N	PDF
12CNE8N Abstract: IPD12CNE8N IPP12CNE8N PG-TO220-3 DIODE 809 marking IPD12CNE8NG marking ff Text: OptiMOS 2 Power-Transistor IPB12CNE8N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N IPB12CN10N PG-TO263-3 PG-TO252-3 12CNE8N PG-TO220-3 DIODE 809 marking IPD12CNE8NG marking ff	PDF
12N03L Abstract: IPU12N03L TO252 thermal character IPD12N03L P-TO252 12n03 Text: IPD12N03L IPU12N03L Preliminary data OptiMOS Power-Transistor Product Summary Feature • N-Channel · Logic Level · Low on-resistance R DS on · Excellent Gate Charge x RDS(on) product (FOM) · Superior thermal resistance · 175°C operating temperature	Original	IPD12N03L IPU12N03L P-TO251 P-TO252 Q67040-S4342 12N03L Q67042-S4043 12N03L IPU12N03L TO252 thermal character IPD12N03L P-TO252 12n03	PDF

IPD12 Search Results

IPD12 Result Highlights (1)

IPD12 Price and Stock

Infineon Technologies AG IPD122N10N3GATMA1

Infineon Technologies AG IPD12CN10NGATMA1

Samtec Inc IPD1-20-D

Samtec Inc IPD1-25-D-K-M

Samtec Inc IPD1-25-D-K

IPD12 Datasheets (36)

IPD12 Datasheets Context Search

12CN10N

12N03L

C15N

12N03L

12CN10N

marking EB5

12CN10N

12CN10N

12N03L

ip dslam

122N10N

Untitled

122N10N

Untitled

Untitled

127n06l

12N03L

infineon marking TO-252

12CN10N

12CN10N

12N03L

10 GHz pin diode

12CNE8N

12N03L