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    20JAN09 Search Results

    20JAN09 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TW88

    Abstract: MUN5111 MUN5111DW MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131
    Text: MUN5111DW Series 6 Dual Bias Resistor Transistor PNP Silicon 5 4 R1 Q2 6 5 1 Q1 R2 2 2 3 SOT-363 SC-88 R1 1 4 R2 3 M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol


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    MUN5111DW OT-363 SC-88) 20-Jan-09 MUN5111 OT-363 TW88 MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 PDF

    NPN TEMT7000X01

    Abstract: phototransistor 500-600 nm TEMT7000X01 J-STD-020D VSMB1940X01 radiation sensors
    Text: TEMT7000X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package, RoHS Compliant, Released for Lead Pb -free Solder Process, AEC Q101 Released FEATURES • Package type: surface mount • Package form: 0805 • Dimensions (L x W x H in mm): 2 x 1.25 x 0.85


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    TEMT7000X01 VSMB1940X01 J-STD-020 TEMT7000X01 18-Jul-08 NPN TEMT7000X01 phototransistor 500-600 nm J-STD-020D VSMB1940X01 radiation sensors PDF

    smd transistor code rc4

    Abstract: IHLP2020-BZ RK 73 SMD 2020ab EB-500 smd code rc4 b13 smd smd s51 smd code pj 13 IHLP-2020CZ
    Text: Packaging Methods Vishay Dale SMD Magnetics Packaging Methods TAPE AND REEL in inches [millimeters] Tape and Reel W P User Direction of Feed Carrier Dimensions PACKAGE CODE MODEL IHLP-1616AB IHLP-1616BZ IHLP-2020AB IHLP-2020BZ IHLP-2020CZ IHLP-2525AH IHLP-2525BD


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    IHLP-1616AB IHLP-1616BZ IHLP-2020AB IHLP-2020BZ IHLP-2020CZ IHLP-2525AH IHLP-2525BD IHLP-2525CZ IHLP-2525EZ IHLP-4040DZ smd transistor code rc4 IHLP2020-BZ RK 73 SMD 2020ab EB-500 smd code rc4 b13 smd smd s51 smd code pj 13 IHLP-2020CZ PDF

    CRCW0603562RFKEAHP

    Abstract: No abstract text available
    Text: CRCW.-HP e3 Vishay Pulse Proof, High Power Thick Film Chip Resistors FEATURES • • • • • • Excellent pulse load capability Enhanced power rating Double side printed resistor element Protective overglaze Lead Pb -free solder contacts on Ni barrier layer


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    2002/95/EC 18-Jul-08 CRCW0603562RFKEAHP PDF

    Untitled

    Abstract: No abstract text available
    Text: 20UT04, 20WT04FN Vishay High Power Products High Performance Schottky Generation 5.0, 20 A 20UT04 FEATURES 20WT04FN • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency


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    20UT04, 20WT04FN 20UT04 O-251AA) O-252AA) 18-Jul-08 PDF

    schottky Diode PV application

    Abstract: pv cell 20WT04FN
    Text: V ishay I ntertechno l o g y, I nc . High-Performance Gen 5.0 Schottky Diodes Key Benefits • Tjmax = 175 °C • Very low forward voltage drop VF max: 0.530 V at 20 A, 125 °C • Extremely low reverse leakage (IR max: 7 mA at 45 V, 125 °C) • Optimized VF vs. IR trade-off for high efficiency


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    AEC-Q101 20WT04FN O-252AA) O-251AA) 20WT04FN 20UT04 20UT04, schottky Diode PV application pv cell PDF

    VCS1610 (Kelvin Connection)

    Abstract: 0R200 20JAN09
    Text: VCS1610 Kelvin Connection Vishay Foil Resistors High Precision Foil Surface Mount Current Sensing Chip Resistors with TCR of ± 2 ppm/°C, Load Life Stability of ± 0.02 %, ESD Immunity up to 25 kV and Fast Thermal Stabilization FEATURES INTRODUCTION Model VCS1610 is a surface mount resistor designed with


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    VCS1610 18-Jul-08 VCS1610 (Kelvin Connection) 0R200 20JAN09 PDF

    VSMB1940X01

    Abstract: J-STD-020D 20594 Q-101
    Text: TEMT7100X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package, RoHS Compliant, Released for Lead Pb -free Solder Process, AEC Q101 Released FEATURES • Package type: surface mount • Package form: 0805 • Dimensions (L x W x H in mm): 2 x 1.25 x 0.85


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    TEMT7100X01 VSMB1940X01 J-STD-020 2002/95/EC 2002/96/EC TEMT7100X01 18-Jul-08 VSMB1940X01 J-STD-020D 20594 Q-101 PDF

    MUN5313DW

    Abstract: MUN5311DW MUN5331DW MUN5332DW MUN5333DW 29 transistor
    Text: MUN5311DW Series 6 Dual Bias Resistor Transistor NPN+PNP Silicon 5 R1 Q2 P b Lead Pb -Free 4 6 5 R2 1 Q1 R2 R1 1 3 SOT-363(SC-88) 3 2 2 4 Maximum Ratings ( TA=25˚C unless otherwise noted, common for Q1 adn Q2, -minus sign for Q1(PNP) omitted) Symbol Value


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    MUN5311DW OT-363 SC-88) 29-Dec-05 OT-363 MUN5313DW MUN5331DW MUN5332DW MUN5333DW 29 transistor PDF

    TEMD7000X01

    Abstract: AEC-Q101 J-STD-020D Diode smd code ee
    Text: TEMD7000X01 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant, Released for Lead Pb -free Reflow Soldering, AEC Q101 Released FEATURES • Package type: surface mount • Package form: 0805 • Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 • Radiant sensitive area (in mm2): 0.23


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    TEMD7000X01 J-STD-020 TEMD7000X01 18-Jul-08 AEC-Q101 J-STD-020D Diode smd code ee PDF

    MUN5111

    Abstract: MUN5111DW MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 MUN5132
    Text: MUN5111DW Series Dual Bias Resistor Transistor PNP Silicon 6 5 R1 Q2 R2 1 4 6 5 R2 1 Q1 R1 2 2 4 3 SOT-363 SC-88 3 M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol


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    MUN5111DW OT-363 SC-88) 20-Jan-09 MUN5111 OT-363 MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 MUN5132 PDF

    SS2PH10

    Abstract: 20JAN09 "MARKING CODE 29" DO-220AA JESD22-B102 J-STD-002 q101
    Text: New Product SS2PH9 & SS2PH10 Vishay General Semiconductor High Voltage Surface Mount Schottky Barrier Rectifiers High Barrier Technology for Improved High Temperature Performance FEATURES • Very low profile - typical height of 1.0 mm eSMP TM Series • Ideal for automated placement


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    SS2PH10 J-STD-020, 2002/95/EC 2002/96/EC DO-220AA 175lectual 18-Jul-08 SS2PH10 20JAN09 "MARKING CODE 29" DO-220AA JESD22-B102 J-STD-002 q101 PDF

    TEMD7100X01

    Abstract: J-STD-020D
    Text: TEMD7100X01 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant, Released for Lead Pb -free Soldering, AEC Q101 Released FEATURES • • • • • • • 20043-1 DESCRIPTION TEMD7100X01 is a high speed and high sensitive PIN photodiode. It is a miniature surface mount device (SMD)


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    TEMD7100X01 TEMD7100X01 18-Jul-08 J-STD-020D PDF

    MUN5211DW

    Abstract: MUN5212DW MUN5213DW MUN5214DW MUN5215DW
    Text: MUN5211DW Series Surface Mount Dual Bias Resistor Transistor 6 NPN Silicon 5 R1 Q2 P b Lead Pb -Free R2 1 4 6 5 4 R2 Q1 R1 3 2 1 2 3 SOT-363(SC-88) NPN+NPN Maximum Ratings Symbol VCEO VCBO IC Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current


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    MUN5211DW OT-363 SC-88) 20-Jan-09 OT-363 MUN5212DW MUN5213DW MUN5214DW MUN5215DW PDF

    Untitled

    Abstract: No abstract text available
    Text: T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED FO R A LL C O P Y R IG H T BY ^ 0 0 E L E C T R O N IC S P U B L IC A T IO N IN TE R N A TIO N A L RIGHTS REVISIO N S 50 R E S E R VE D . C O R P O R A T IO N . LTR D E S C R IP T IO N REVISED 24.13 [.950]


    OCR Scan
    ECR-09-000368 20JAN09 20JAN PDF