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Infineon Technologies AG SPP20N60S5XKSA1 HIGH POWER_LEGACY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP20N60S5XKSA1	Tube	1,241		1	1 $5.16 10 $5.16 100 $5.16 1000 $1.98725 10000 $1.98725	Buy Now
Bristol Electronics	SPP20N60S5XKSA1		300			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	SPP20N60S5XKSA1		256		1	1 $2.21 10 $2.21 100 $2.08 1000 $1.88 10000 $1.88	Buy Now
EBV Elektronik	SPP20N60S5XKSA1			16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi NTHL120N60S5Z MOSFET N-CH 600V 22A TO3PN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTHL120N60S5Z	Tube	449		1	1 $5.74 10 $3.88 100 $5.74 1000 $5.74 10000 $5.74	Buy Now
Avnet Americas	NTHL120N60S5Z	Tube		0 Weeks, 2 Days	211	1 - 10 - 100 - 1000 $2.83333 10000 $2.8	Buy Now
	NTHL120N60S5Z	Tube		22 Weeks	450	1 - 10 - 100 - 1000 $2.8594 10000 $2.79212	Buy Now
Mouser Electronics	NTHL120N60S5Z		440			1 $4.91 10 $3.46 100 $2.96 1000 $2.96 10000 $2.96	Buy Now
Newark	NTHL120N60S5Z	Bulk	450		1	1 $6.59 10 $5.54 100 $4.48 1000 $4.23 10000 $4.23	Buy Now
Rochester Electronics	NTHL120N60S5Z		6,215		1	1 $3.3 10 $3.3 100 $3.1 1000 $2.81 10000 $2.81	Buy Now

Avnet Silica	NTHL120N60S5Z			23 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	NTHL120N60S5Z			24 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	NTHL120N60S5Z		5,085			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	NTHL120N60S5Z		360		1	1 - 10 - 100 $4.04 1000 $3.77 10000 $3.77	Buy Now
Infineon Technologies AG SPP20N60S5 MOSFET N-CH 650V 20A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP20N60S5	Tube			500	1 - 10 - 100 - 1000 $2.12718 10000 $2.12718	Buy Now
Mouser Electronics	SPP20N60S5		25			1 $4.5 10 $4.49 100 $2.46 1000 $1.98 10000 $1.98	Buy Now
TME	SPP20N60S5		60		1	1 $7.36 10 $5.88 100 $5.29 1000 $4.93 10000 $4.93	Buy Now
ComSIT USA	SPP20N60S5		633			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi FGB20N60SFD IGBT 600V 40A 208W D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FGB20N60SFD	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	FGB20N60SFD	Reel		0 Weeks, 2 Days	264	1 - 10 - 100 - 1000 $2.489 10000 $2.413	Buy Now
Bristol Electronics	FGB20N60SFD		485			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Flip Electronics	FGB20N60SFD		3,200			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Flip Electronics FGB20N60SFD IGBT FIELD STOP 600V 40A TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FGB20N60SFD	Reel			200	1 - 10 - 100 - 1000 $2.53 10000 $2.53	Buy Now

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20N60S Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
20n60s5 Abstract: 20n60s transistor 20N60s5 20n60 20n60s5 datasheet Q67040-S4751 SPP20N60S5 SPB20N60S5 Text: 20N60S5 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A P-TO263-3-2 • Ultra low gate charge P-TO220-3-1 • Periodic avalanche rated	Original	PDF	SPP20N60S5 SPB20N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4751 20N60S5 20n60s5 20n60s transistor 20N60s5 20n60 20n60s5 datasheet Q67040-S4751 SPP20N60S5 SPB20N60S5
20n60s5* values Abstract: 20n60s5 SPW20N60S5 equivalent 20N60S5 TO247 SPW20N60S5 Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance	Original	PDF	SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 20n60s5* values 20n60s5 SPW20N60S5 equivalent 20N60S5 TO247 SPW20N60S5
transistor 20N60s5 Abstract: SPW20N60S5 Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance	Original	PDF	SPW20N60S5 PG-TO247 SPW20N60S5 Q67040-S4238 20N60S5 transistor 20N60s5
20n60s Abstract: 20n60s5 SPW20N60S5 Text: 20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 20n60s 20n60s5 SPW20N60S5
SPW20N60S5 equivalent Abstract: 20N60S5 TO247 20n60s5 transistor 20N60s5 SPW20N60S5 20n60 Text: 20N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.19	Original	PDF	SPW20N60S5 P-TO247 SPWx1N60S5 Q67040-S4238 20N60S5 SPW20N60S5 equivalent 20N60S5 TO247 20n60s5 transistor 20N60s5 SPW20N60S5 20n60
20n60s5 Abstract: transistor 20N60s5 20n60s5 power transistor 20n60s 20n60s5 datasheet S4751 smd diode 444 spp20n60s5 20n60 20n60s5 equivalent Text: 20N60S5 20N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V • Improved periodic avalanche rating RDS(on) 0.19	Original	PDF	SPP20N60S5 SPB20N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4751 20N60S5 20n60s5 transistor 20N60s5 20n60s5 power transistor 20n60s 20n60s5 datasheet S4751 smd diode 444 spp20n60s5 20n60 20n60s5 equivalent
transistor 20N60s5 Abstract: 20n60s5 SPW20N60S5 equivalent SPW20N60S5 20n60s5 power transistor 20N60S5 TO247 20N60S RESISTANCE VALUE 20N60S5 Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance	Original	PDF	SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 transistor 20N60s5 20n60s5 SPW20N60S5 equivalent SPW20N60S5 20n60s5 power transistor 20N60S5 TO247 20N60S RESISTANCE VALUE 20N60S5
20n60s5 Abstract: smd DIODE code marking 20A SPP20N60S5 20n60s5 power transistor Q67040-S4751 Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A PG-TO220 • Ultra low gate charge • Periodic avalanche rated 2 • Extreme dv/dt rated	Original	PDF	SPP20N60S5 PG-TO220 P-TO220-3-1 Q67040-S4751 20N60S5 20n60s5 smd DIODE code marking 20A SPP20N60S5 20n60s5 power transistor Q67040-S4751
20N60S5 Abstract: SPP20N60S5 Q67040-S4751 SPB20N60S5 20n60s Text: 20N60S5 20N60S5 Preliminary data D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 • Ultra low gate charge G,1 S,3 • Improved periodic avalanche rating • Extreme dv/dt rated COOLMOS	Original	PDF	SPP20N60S5 SPB20N60S5 SPPx1N60S5/SPBx1N60S5 SPP20N60S5 P-TO220-3-1 P-TO263-3-2 20N60S5 Q67040-S4751 20N60S5 Q67040-S4751 SPB20N60S5 20n60s
20n60s5 Abstract: SPP20N60S5 4252 spp20n60 Q67040-S4751 SPB20N60S5 Text: 20N60S5 20N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO 220 · Ultra low gate charge · Improved periodic avalanche rating · Extreme dv/dt rated · Optimized capacitances	Original	PDF	SPP20N60S5 SPB20N60S5 SPPx1N60S5/SPBx1N60S5 P-TO220-3-1 20N60S5 Q67040-S4751 P-TO263-3-2 SPP20N60S5 20n60s5 4252 spp20n60 Q67040-S4751 SPB20N60S5
20n60s5 Abstract: spp20n60s5 20N60S transistor 20N60s5 20n60s5 power transistor Text: 20N60S5 20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 600 V RDS(on) 0.19 Ω ID 20 A P-TO263-3-2 P-TO220-3-1 • Periodic avalanche rated	Original	PDF	SPP20N60S5 SPB20N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4751 Q67040-S4171 20n60s5 20N60S transistor 20N60s5 20n60s5 power transistor
75V-8V Abstract: No abstract text available Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A PG-TO220-3-1 • Ultra low gate charge • Periodic avalanche rated 2 • Extreme dv/dt rated	Original	PDF	SPP20N60S5 P-TO220-3-1 PG-TO220-3-1 SPP20N60S5 PG-TO220-3-1 Q67040-S4751 20N60S5 75V-8V
20n60s1 Abstract: 60v 10a p type mosfet 20n60s Text: / 20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] 2.7 ±0.1 ±0 .2 6.4 ±0.2 φ3 .6 3.6 ±0.2 Applications UPS Server Telecom Power conditioner system	Original	PDF	FMP20N60S1 O-220 O-220AB 20n60s1 60v 10a p type mosfet 20n60s
20n60s5 Abstract: SPW20N60S5 equivalent SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s Text: 20N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.19 Ω • Optimized capacitances ID	Original	PDF	SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 20n60s5 SPW20N60S5 equivalent SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s

20N60S5 TO247 Abstract: 20n60s5 transistor 20N60s5 20n60s5 power transistor SPW20N60S5 equivalent SPW20N60S5 siemens 350 98 SPW20 20n60s Text: 20N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated 1 S,3 2 3 • Optimized capacitances COOLMOS • Improved noise immunity	Original	PDF	SPW20N60S5 SPWx1N60S5 SPW20N60S5 P-TO247 20N60S5 Q67040-S4238 20N60S5 TO247 20n60s5 transistor 20N60s5 20n60s5 power transistor SPW20N60S5 equivalent siemens 350 98 SPW20 20n60s
20N60S5 TO247 Abstract: 20n60s5 20N60S5 to-247 SPW20N60S5 20n60s5* values Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance	Original	PDF	SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 009-134-A O-247 20N60S5 TO247 20n60s5 20N60S5 to-247 SPW20N60S5 20n60s5* values
SPP20N60S5 Abstract: No abstract text available Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A PG-TO220-3-1 • Ultra low gate charge • Periodic avalanche rated 2 • Extreme dv/dt rated	Original	PDF	SPP20N60S5 P-TO220-3-1 PG-TO220-3-1 SPP20N60S5 PG-TO220-3-1 Q67040-S4751 20N60S5
20n60s Abstract: No abstract text available Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 0.19 Ω ID 20 A P-TO263-3-2 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPB20N60S5 P-TO263-3-2 20N60S5 SPB20N60S5 Q67040-S4171 20n60s
Untitled Abstract: No abstract text available Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A PG-TO220 • Ultra low gate charge • Periodic avalanche rated 2 • Extreme dv/dt rated	Original	PDF	SPP20N60S5 PG-TO220 P-TO220-3-1 Q67040-S4751 20N60S5
20N60S1 Abstract: Fmv20n60 FMV20N60S1 fuji electric lot code 20N60S Text: / 20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg Outline Drawings [mm]	Original	PDF	FMV20N60S1 O-220F 20N60S1 Fmv20n60 FMV20N60S1 fuji electric lot code 20N60S
20n60s5 Abstract: transistor 20N60s5 20n60s5 power transistor n60s5 Text: SIEMENS 20N60S5 20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best R 0S 0n in TO 220 • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances	OCR Scan	PDF	SPP20N60S5 SPB20N60S5 N60S5/SPBx1 N60S5 SPP20N60S5 P-T0220-3-1 P-T0263-3-2 20N60S5 20n60s5 transistor 20N60s5 20n60s5 power transistor n60s5
20N60S5 Abstract: No abstract text available Text: SIEMENS 20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity • Former development designation:	OCR Scan	PDF	SPW20N60S5 N60S5 SPW20N60S5 P-T0247 20N60S5 Q67040-S4238 20N60S5
20n60s5 Abstract: transistor 20N60s5 20n60s5 power transistor n60s5 20n60s siemens 230 98 O SPP20N60S5 smd diode sm i7 siemens 350 98 Q67040-S4751 Text: SIEMENS SP P 20N 60S 5 SP B 20N 60S 5 Prelim inary data c’ D ,2 Cool MOS Power Transistor I I • New revolutionary high voltage technology / Í • Worldwide best R o s { o n in TO 220 i 0 -G ,1 S /T • Periodic avalanche proved • I ‘	OCR Scan	PDF	SPP20N60S5 SPB20N60S5 N60S5/SPBx1 N60S5 SPP20N60S5 SPB20N60S5 P-T0220-3-1 P-T0263-3-2 20N60S5 transistor 20N60s5 20n60s5 power transistor n60s5 20n60s siemens 230 98 O smd diode sm i7 siemens 350 98 Q67040-S4751
20n60s5 Abstract: transistor 20N60s5 20n60s5 power transistor 20n60s N60S5 SPP20N60 SPB20N60S5 smd transistor S5 SPP20N60S5 Text: SIEMENS 20N60S5 20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best R q S 0 n ¡n TO 220 • Ultra low gate charge • Periodic avalanche proved • Extreme äv/ät rated • Optimized capacitances	OCR Scan	PDF	SPP20N60S5 SPB20N60S5 N60S5/SPBx1 N60S5 P-T0220-3-1 P-T0263-3-2 20N60S5 20N60S5 transistor 20N60s5 20n60s5 power transistor 20n60s N60S5 SPP20N60 SPB20N60S5 smd transistor S5

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20N60S Price and Stock

Infineon Technologies AG SPP20N60S5XKSA1

onsemi NTHL120N60S5Z

Infineon Technologies AG SPP20N60S5

onsemi FGB20N60SFD

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