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    2230 MOTOR Search Results

    2230 MOTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67H451AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67H450AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67S580FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=1.6 Visit Toshiba Electronic Devices & Storage Corporation
    TB67S581FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67B001BFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation

    2230 MOTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Faulhaber 2230

    Abstract: s 2230 power 22E din 867 Faulhaber 2230 MOTOR faulhaber series 38/3 S2230 Gearheads
    Text: DC-Micromotors 2,5 mNm Precious Metal Commutation For combination with Gearheads: 20/1, 22E, 22/2, 22/5, 22/6, 23/1, 38/3 Encoders: 5500, 5540 Series 2230 . S 2230 T UN R P2 max. η max. 003 S 3 0,6 3,69 83 006 S 6 3,0 2,94 82 012 S 12 10,8 3,27 83 015 S


    Original     		PDF

    EEPROM 2864

    Abstract: EPROM 27020 EEPROM 28256 27E020 EEPROM 2864 INTEL 28pC64 28c64 EPROM 27256 27C040Q intel 27512 eprom eeprom 27C040
    Text: ROM Emulator for USB EeRom-8U User’s Guide EE Tools, Inc. 4620 Fortran Dr. #102 San Jose, CA 95134 www.eetools.com [email protected] Tel: 408 263-2221 Fax: (408) 263-2230 EeRom-8U User’s Guide Copyright 1992-2010 by E. E. Tools, Inc. All rights reserved. No part of this publication may be


    Original     		PDF ADP32: 32-PLCC 32-DIP ADP28: 28-DIP EEPROM 2864 EPROM 27020 EEPROM 28256 27E020 EEPROM 2864 INTEL 28pC64 28c64 EPROM 27256 27C040Q intel 27512 eprom eeprom 27C040

    2SD1838

    Abstract: relay 5v 30a
    Text: Ordering number:EN2230B NPN Triple Diffused Planar Silicon Darlington Transistor 2SD1838 Driver Applications Applications Package Dimensions • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . unit:mm 2041A [2SD1838]


    Original     		PDF EN2230B 2SD1838 2SD1838] 2SD1838 relay 5v 30a

    2230 motor

    Abstract: 3525 3045 capacitors 3530
    Text: Electrolytic Capacitors Snap-in, ultra miniature, 85˚C / 105˚C NEW Series Useful life Features 157 PUM-SI 159 PUL-SI 198 PHR-SI Power Ultra Miniature Snap-In Power Ultra Long life Snap-In Power High Ripple current Snap-In 2500 h/85°C 5000 h/105°C 15 000 h/85°C


    Original     		PDF h/105 2230 motor 3525 3045 capacitors 3530

    Untitled

    Abstract: No abstract text available
    Text: Snap-in, ultra miniature, 85 °C/105 °C Product information 157 PUM-SI 159 PUL-SI 198 PHR-SI Useful life 5000 h/85 °C 5000 h/105 °C 15 000 h/85 °C Temp. range –25°C to +85 °C –25 °C to +105 °C –25°C to +85 °C Tolerance ±20% ±20% ±20% CR µF


    Original     		PDF C/105 h/105

    capacitor 0805 avx

    Abstract: 08055C103KATDA J940 08053G105ZATEA Bipolar NPN Transistor sot23 MRF21010
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N–Channel Enhancement–Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for W–CDMA base station applications at frequencies from 2110 to


    Original     		PDF MRF21010 MRF21010 capacitor 0805 avx 08055C103KATDA J940 08053G105ZATEA Bipolar NPN Transistor sot23

    M1G074-BF

    Abstract: R1G225-AF11-52 r1g225 UL1004 M1G074BF soft start motor
    Text: EC centrifugal fan R1G225-AF11-52 backward curved, single inlet ebm-papst Mulfingen GmbH & Co. KG Bachmühle 2 74673 Mulfingen Phone: +49 7938 81-0 Fax: +49 7938 81-110 www.ebmpapst.com [email protected] Nominal data Type R1G225-AF11-52 Motor M1G074-BF


    Original     		PDF R1G225-AF11-52 R1G225-AF11-52 M1G074-BF M1G074-BF r1g225 UL1004 M1G074BF soft start motor

    100B0R5BW

    Abstract: 100B102JW Transistor J438 100B5R6BW MRF21010
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21010R1 MRF21010LSR1 MRF21010LSR1 100B0R5BW 100B102JW Transistor J438 100B5R6BW MRF21010

    Transistor J438

    Abstract: MRF21010 100B102JW
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21010 MRF21010S Transistor J438 100B102JW

    capacitor 0805 avx

    Abstract: MRF21010 08055C103KATDA 3224W C-XM-99-001-01 08051J2R2BBT 293D106X9035D Bipolar NPN Transistor sot23
    Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N–Channel Enhancement–Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for W–CDMA base station applications at frequencies from 2110 to


    Original     		PDF MRF21010/D MRF21010 capacitor 0805 avx MRF21010 08055C103KATDA 3224W C-XM-99-001-01 08051J2R2BBT 293D106X9035D Bipolar NPN Transistor sot23

    MRF21010

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.


    Original     		PDF MRF21010/D MRF21010 MRF21010S MRF21010S

    TO272

    Abstract: AN-587 motorola MW4IC2230MBR1
    Text: MOTOROLA Order this document by MW4IC2230/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W–CDMA base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts


    Original     		PDF MW4IC2230/D MW4IC2230 MW4IC2230MBR1 MW4IC2230GMBR1 TO272 AN-587 motorola

    MRF21010

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21010/D MRF21010R1 MRF21010LSR1 MRF21010LSR1 MRF21010/D MRF21010

    MRF21010

    Abstract: 100B102JW 293D106X9035D2T MRF21010S NI-360
    Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21010/D MRF21010 MRF21010S MRF21010 100B102JW 293D106X9035D2T MRF21010S NI-360

    MRF21010

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21010/D MRF21010LR1 MRF21010LSR1 MRF21010LSR1 MRF21010/D MRF21010

    MRF21010R1

    Abstract: 567 tone MRF21010 MRF21010LSR1 100B102JW
    Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21010/D MRF21010R1 MRF21010LSR1 MRF21010R1 567 tone MRF21010 MRF21010LSR1 100B102JW

    MRF21010

    Abstract: MRF21010SR1 sot-23 macom MRF21010R1 100B5R6B
    Text: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21010/D MRF21010R1 MRF21010SR1 MRF21010R1 MRF21010 MRF21010SR1 sot-23 macom 100B5R6B

    capacitor 2200 micro M

    Abstract: MRF21010LR1 MRF21010LSR1 08053G105ZATEA MRF21010
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Freescale Semiconductor, Inc.


    Original     		PDF MRF21010/D MRF21010LR1 MRF21010LSR1 MRF21010LR1 capacitor 2200 micro M MRF21010LSR1 08053G105ZATEA MRF21010

    hatching machine

    Abstract: A113 100B8R2CW MW4IC2230 MW4IC2230GMBR1 MW4IC2230MBR1 TAJD106K035
    Text: MOTOROLA Order this document by MW4IC2230/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W–CDMA base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts


    Original     		PDF MW4IC2230/D MW4IC2230 MW4IC2230MBR1 MW4IC2230GMBR1 hatching machine A113 100B8R2CW MW4IC2230GMBR1 TAJD106K035

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MW4IC2230/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts


    Original     		PDF MW4IC2230/D MW4IC2230 MW4IC2230MBR1 MW4IC2230GMBR1

    xr2230cp

    Abstract: xr 2230 XR-2230 EXAR Monolithic Function generator
    Text: XR-2230 V T EX A R Pulse-Width Modulator Control System GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The XR-2230 is a high-performance monolithic pulse width modulator control system. It contains all the nec­ essary control blocks for designing switch mode power


    OCR Scan     		PDF XR-2230 XR-2230 18-Pin XR-1568M XR-1568/XR-1468C XR-1468/1568 xr2230cp xr 2230 EXAR Monolithic Function generator

    k 2057

    Abstract: K1766 K2236 K1767 K1406 K1574 K1879 K 2149 K 2237 2SK1407
    Text: P o w e r M O S F E T jr-M O S I I I '5 R ds (O N ) M aximum Rating Application Batest M O T O R Drive UPS A C 1 15V Input Switching Power Supply Type No. O * O • O O O O O O O O O O O O O O 2S K 2146 2S K 2230 2S K 2235 2S K 1766 2S K 1406 2SK1S54 2SK1805


    OCR Scan     		PDF -220FL/SM k 2057 K1766 K2236 K1767 K1406 K1574 K1879 K 2149 K 2237 2SK1407

    4116 Dram

    Abstract: 32T200
    Text: MOTOROLA SEMICONDUCTOR -TECHNICAL DATA MCM32230 MCM32T200 2M x 32 Bit Dynamic Random Access Memory Module The MCM32230 is a 64M dynamic random access memory DRAM module organized as 2,097,152 x 32 bits. The module is a 72-lead double sided single­


    OCR Scan     		PDF MCM32230 72-lead MCM54400AN 32T200 32T200SH MCM32T200 4116 Dram 32T200

    Untitled

    Abstract: No abstract text available
    Text: ISOLATORS General Information Equivalent Discrete Semiconductors The MOC2A40 and MOC2A6O Series are the first members of the POWER OPTO Isolator family from Motorola. The MOC2A40/MOC2A60 are 2 Amp @ 40°C/Zero-Crossing/Optlcally Coupled Triacs. These isolated AC output devices are ruggedized to survive the harsh operating environments inherent in Industrial Controller applications. Additionally, their thermally opti­


    OCR Scan     		PDF MOC2A40 MOC2A60 MOC2A40/MOC2A60 OC2A40-10/Dand MOC2A60-10/D KrTMOC2A40-10/D,