Si4842DY
Abstract: Si4842DY-T1 Si4842DY-T1-E3
Text: Si4842DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (Ω) ID (A) 0.0045 @ VGS = 10 V 23 0.006 @ VGS = 4.5 V 19 D TrenchFETr Power MOSFET D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View Ordering Information: Si4842DY
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Si4842DY
Si4842DY-T1
Si4842DY--E3
Si4842DY-T1-E3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Crystek Corporation AVAILABLE PERFORMANCE SPECIFICATION Lower Frequency: Upper Frequency: Tuning Voltage: Supply Voltage: Output Power: Supply Current: Harmonic Suppression 2nd Harmonic : Pushing: Pulling, all Phases: Tuning Sensitivity: Phase Noise @ 10kHz offset:
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10kHz
CVCO55BE-1690-2062
23-Aug-04
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AT91SAM9261B-CU
Abstract: ARM926EJ-S AT91SAM9261 ISO7816 PHASE COMPARATORS k 3067
Text: Features • Incorporates the ARM926EJ-S ARM Thumb® Processor • • • • • • • • • • – DSP Instruction Extensions – ARM Jazelle® Technology for Java® Acceleration – 16 Kbyte Data Cache, 16 Kbyte Instruction Cache, Write Buffer
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ARM926EJ-STM
6062LS
23-Mar-09
AT91SAM9261B-CU
ARM926EJ-S
AT91SAM9261
ISO7816
PHASE COMPARATORS
k 3067
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marking V3
Abstract: No abstract text available
Text: BFG67 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 2 1 • Small feedback capacitance • Low noise figure • High transition frequency 4 3 Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated
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BFG67
OT-143
D-74025
23-Aug-04
marking V3
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marking w18
Abstract: No abstract text available
Text: BFP181T / BFP181TW / BFP181TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Low noise figure • High power gain 3 4 2 Applications 1 For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA.
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BFP181T
BFP181TW
BFP181TRW
OT-143
OT-343
OT-143
OT-343
OT-343R
marking w18
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BF998 vishay
Abstract: application BF998 12864
Text: BF998 / BF998R / BF998RW VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • Integrated gate protection diodes Low noise figure Low feedback capacitance High cross modulation performance
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BF998
BF998R
BF998RW
OT-143
OT-143R
OT-343R
OT-143
OT-143R
BF998 vishay
application BF998
12864
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Untitled
Abstract: No abstract text available
Text: Packaging: Axial Aluminum Capacitors Vishay BCcomponents Aluminum Capacitors TAPING Vishay BCcomponents axial, aluminum and solid aluminum capacitors in sizes up to ∅D = 16 mm, are available in taped version corresponding to “IEC 60286-1”. They are most suitable for use on automatic insertion machines, cutting and forming equipment and are supplied in box
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23-Aug-04
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Untitled
Abstract: No abstract text available
Text: Si7868DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A) 0.00225 @ VGS = 10 V 29 D D D D 0.00275 @ VGS = 4.5 V 25 APPLICATIONS VDS (V) 20 TrenchFETr Power MOSFET Low rDS(on) PWM (Qgd and Rg) Optimized 100% Rg Tested
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Si7868DP
Si7868DP-T1
Si7868DP-T1--E3
08-Apr-05
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stm 4835
Abstract: ARM926EJ-S AT91SAM9261 ISO7816
Text: Features • Incorporates the ARM926EJ-S ARM Thumb® Processor • • • • • • • • • • – DSP Instruction Extensions – ARM Jazelle® Technology for Java® Acceleration – 16 Kbyte Data Cache, 16 Kbyte Instruction Cache, Write Buffer
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ARM926EJ-STM
6062IS
26-Nov-07
stm 4835
ARM926EJ-S
AT91SAM9261
ISO7816
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Untitled
Abstract: No abstract text available
Text: TCND5000 VISHAY Vishay Semiconductors Reflective Optical Sensor with PIN Photodiode Output Description C TCND5000 is a reflective sensor SMD in plastic package including IR emitter and PIN Photodiode. Optical axes of emitter and detector are parallel aligned for
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TCND5000
TCND5000
2002/95/EC
2002/96/EC
08-Apr-05
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ARM926EJ-S
Abstract: AT91SAM9261 ISO7816
Text: Features • Incorporates the ARM926EJ-S ARM Thumb® Processor • • • • • • • • • • – DSP Instruction Extensions – ARM Jazelle® Technology for Java® Acceleration – 16 Kbyte Data Cache, 16 Kbyte Instruction Cache, Write Buffer
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ARM926EJ-STM
6062LS
23-Mar-09
ARM926EJ-S
AT91SAM9261
ISO7816
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MARKING w96
Abstract: No abstract text available
Text: BFP196T / BFP196TR / BFP196TW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • Low noise figure • High transition frequency fT = 7.5 GHz • Excellent large signal behaviour SOT-143 3 4 2 1 Applications For low noise, low distortion broadband amplifiers in
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BFP196T
BFP196TR
BFP196TW
OT-143
OT-143R
OT-343
OT-143
OT-143R
MARKING w96
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MG MARKING
Abstract: No abstract text available
Text: BFP280T / BFP280TW / BFP280TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. SOT-143 3 4 2 Mechanical Data Typ: BFP280T Case: SOT-143 Plastic case
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BFP280T
BFP280TW
BFP280TRW
OT-143
OT-143
OT-343
BFP280TRW
OT-343R
MG MARKING
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transistor w 431
Abstract: No abstract text available
Text: BFP92A / BFP92AW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 2 1 • High power gain • Low noise figure • High transition frequency SOT-143 3 4 Applications RF amplifier up to GHz range specially for wide band antenna amplifier.
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BFP92A
BFP92AW
OT-143
OT-343
OT-143
BFP92AW
OT-343
D-74025
23-Aug-04
transistor w 431
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SI9934BDY
Abstract: No abstract text available
Text: Si9934BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 FEATURES rDS(on) (W) ID (A) 0.035 @ VGS = −4.5 V −6.4 0.056 @ VGS = −2.5 V −5.1 D TrenchFETr Power MOSFET S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2
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Si9934BDY
Si9934BDY--E3
Si9934BDY-T1--E3
18-Jul-08
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2.45 GHz single chip transmitter
Abstract: Lowpass Filter 3 GHz atr2406 transmitter circuit ATR2406 "application note" antenna 50 ohm 2 ghz Antenna Power Transisitor 100V 2A RF MODULE atr2406 receiver circuit
Text: PCB-Design Guidelines This application note provides information and guidelines to the user for making it very easy and convenient to develop a compliant RF-System with the ATR2406 Single-Chip Low-IF Transceiver IC. The reference layout of the application board is a close to production design,
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ATR2406
ATR2406
23-Aug-04
2.45 GHz single chip transmitter
Lowpass Filter 3 GHz
atr2406 transmitter circuit
"application note" antenna
50 ohm 2 ghz Antenna
Power Transisitor 100V 2A
RF MODULE
atr2406 receiver circuit
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Coordinates
Abstract: No abstract text available
Text: SPECIFICATION FOR COTCO LED LAMP MODEL No : DOC. No : LM1-PWN1-01 05 17Nov04 Description: 120 Degree 3.2 x 2.8mm SMT-LED in White Color with Water Transparent Dice Material: InGaN Confirmed by Customer: Date: ATTENTION OBSERVE PRECAUTIONS ELECTROSTATIC SENSITIVE DEVICES
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LM1-PWN1-01
17Nov04
23Aug04
21Sep04
ECN-H20040301
21Sep04.
COTCO-D-074
Coordinates
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Untitled
Abstract: No abstract text available
Text: BFP182T / BFP182TW / BFP182TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Low power applications • Low noise figure • High transition frequency 3 4 2 1 Applications SOT-343 For low noise and high gain broadband amplifiers at
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BFP182T
BFP182TW
BFP182TRW
OT-143
OT-343
OT-143
OT-343
OT-343R
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Untitled
Abstract: No abstract text available
Text: BFG92A VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 2 1 • High power gain • Low noise figure • High transition frequency 4 3 Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Electrostatic sensitive device.
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BFG92A
OT-143
D-74025
23-Aug-04
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83P sot-143
Abstract: MG MARKING
Text: BFP183T / BFP183TW / BFP183TRW VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Low power applications • Low noise figure • High transition frequency fT = 8 GHz 3 4 2 1 Applications SOT-343 For low noise and high gain broadband amplifiers at
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BFP183T
BFP183TW
BFP183TRW
OT-143
OT-343
OT-143
OT-343
OT-343R
83P sot-143
MG MARKING
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Si9934BDY
Abstract: No abstract text available
Text: Si9934BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −12 FEATURES rDS(on) (W) ID (A) 0.035 @ VGS = −4.5 V −6.4 0.056 @ VGS = −2.5 V −5.1 D TrenchFETr Power MOSFET S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2
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Si9934BDY
Si9934BDY--E3
Si9934BDY-T1--E3
08-Apr-05
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B152
Abstract: B545 LR7189 MIL-T-7928
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST R E V IS IO N S 14 LTR DESCRIPTION REV PER 0G 3A—0 6 6 4 —0 4 DATE DWN APVD 23AUG04 JR TM D D Z ^ D ^ D I^ WIRE RANGE
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23AUG04
LR7189
MIL-T-7928
31MAR2000
B152
B545
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SG-3050
Abstract: ck 3465
Text: n r ' THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2004 30,50 POS RELEASED FOR PUBUCATION BY TYCO ELECTRONICS CORPORATION. AUG ,2 0 0 4 . REVISIONS LOC ALL RIGHTS RESERVED. J LTR 40,60 POS 2- 02.15 D DESCRIPTION RELEASED DATE FJBO—0871 —04 DWN APVD c.w LE 23AUG04
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23AUG04
20AUG04
31MAR2000
05FEB04_
0-0467-03\c
SG-3050
ck 3465
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Untitled
Abstract: No abstract text available
Text: 2 T H IS D R A W IN G C O P Y R IG H T IS U N P U B L IS H E D . 2004 30,50 POS BY ^ C O RELEASED E L E C T R O N IC S C O R P O R A T IO N . FO R ALL P U B L IC A T IO N R IG H T S AU G , 2 0 0 4 . R E V IS IO N S RESERVED. LTR 40,60 POS 2- 0 2 .1 5 PLUG HOUSING
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FJB0-0871
23AUG04
05FEB04
FB001309
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