23N60C5 Search Results

23N60C5 Price and Stock

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IXYS Corporation IXKC23N60C5 MOSFET N-CH 600V 23A ISOPLUS220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXKC23N60C5	Tube			50	1 - 10 - 100 $10.2428 1000 $10.2428 10000 $10.2428	Buy Now
TME	IXKC23N60C5				1	1 $12.49 10 $10.01 100 $8.99 1000 $8.99 10000 $8.99	Get Quote
IXYS Integrated Circuits Division IXKC23N60C5 MOSFET DIS.23A 600V N-CH ISOPLUS220 COOLMOS THT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXKC23N60C5					1 $12.42334 10 $12.42334 100 $11.6106 1000 $11.6106 10000 $11.6106	Get Quote

23N60C5 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IXKC 23N60C5 Advanced Technical Information ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM	Original	23N60C5 ISOPLUS220TM E72873	PDF
Untitled Abstract: No abstract text available Text: IXKC 23N60C5 CoolMOS 1 Power MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S Preliminary data	Original	23N60C5 ISOPLUS220TM E72873 20100303c	PDF
23N60 Abstract: 23n60c5 E72873 IXKC23N60C5 18A60 Text: IXKC 23N60C5 Advanced Technical Information CoolMOS 1 Po wer MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	23N60C5 ISOPLUS220TM E72873 IXKC23N60C5 20080523a 23N60 23n60c5 E72873 IXKC23N60C5 18A60	PDF
23N60 Abstract: E72873 A6014 Text: IXKC 23N60C5 CoolMOS 1 Power MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S Preliminary data	Original	23N60C5 ISOPLUS220TM E72873 20100303c 23N60 E72873 A6014	PDF
Untitled Abstract: No abstract text available Text: IXKC 23N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM	Original	23N60C5 ISOPLUS220TM E72873	PDF
Untitled Abstract: No abstract text available Text: IXKC 23N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM	Original	23N60C5 ISOPLUS220TM E72873	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF