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    C1995

    Abstract: No abstract text available
    Text: MT4C1627Q 256Kx: t&DRAWT MICZRCJrsi B . [H 3 M m r r mc. DRAM 256K x 16 DRAM 5V, EDO PAGE MODE FEATURES • Ind ustry-stand ard x l 6 p in ou ts, tim in $, functions and packages • H igh-perform ance C M O S silicon-gat> process • Single +5V ±10% p o w er supp ly*


    OCR Scan     		MT4C1627Q 256Kx: 512-cycle 40-Pin C1995. 4ci627o C1995 PDF

    ntc 3d-15

    Abstract: tR0150r NTC 4,7 Siemens TR0150
    Text: H Y » Ö l91/ I Ü J jtiilL -B U /- 256k x 16 - Bit Dynamic RAM INFORMATION NOTE NO.4 9 vÇ vRi v i rn v 4i Kì j wm m nw n• ■nw ww w i mn■—»Fi h n un v■ Ni l A M in * —* I f P i V k / U i « M A i ' A k # i r t l # W a b <a Ì a \ n / p u l ^» i


    OCR Scan     		25Gkx16 514171BJ/BJL 514171BJ/BJL 256kx1S ntc 3d-15 tR0150r NTC 4,7 Siemens TR0150 PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI8F16258C ^ E D I EIÉCTBÛMC MSGNS. WC 256Kx16 SRAM Module 256Kx16 Static RAM CMOS Module Features 256Kx16 bit CMOS Static Random Access Memory • Access Times 70,85, and 100ns • Data Retention Function EDI8F16258LP • TTL Compatible Inputs and Outputs


    OCR Scan     		EDI8F16258C 256Kx16 EDI8F16258C 4096K 128Kx8 EDI8F16258LP) 100ns PDF