sgm 8905
Abstract: 3302 81A ir 3302 81A alcan joint compound snapdragon AKO 546 687 burglar alarm system abstract walkie talkie circuit diagram ZENER DIODES DZ 8407 tea 1601 t
Text: December 19, 2000 Preface to the 13th Edition The Harmonized Tariff Schedule of the United States, Annotated for Statistical Reporting Purposes HTS 2001 is being published pursuant to section 1207 of the Omnibus Trade and Competitiveness Act of 1988 (P.L.
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\FR\FM\21DED1
pfrm02
21DED1
sgm 8905
3302 81A
ir 3302 81A
alcan joint compound
snapdragon
AKO 546 687
burglar alarm system abstract
walkie talkie circuit diagram
ZENER DIODES DZ 8407
tea 1601 t
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TC-7986A
Abstract: 2SK2112 CMS01 7986A diode lt 0236
Text: zr — *5? N E h ^ > v ^ 3* MOS Field Effect Transistor r j C • :> — h 2 S K 2 1 1 2 MOS FET 2 S K 2 1 1 2 IÎN 3 1 + * ; H Ë M O S F E J T & U , * C ct 5 ¡ t g E K ^ g l * * -f -y T 't o * < - y * > 7 ìS j£ f c jÌt 'f c « > , C D r ^ ^ iX - ^ llE S i ^ ,
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2SK2112
oeTi14
a-Ti4S24#
TC-7986A
CMS01
7986A
diode lt 0236
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SK FN 521
Abstract: 2SA1897 T-100 paps7k V/SK FN 521
Text: 5ë'fr%-R H u ttifa fp 0|D July 1993 M 1 "sj O *vj m *□ V; w> -* ít Si' ü 1 V >4 v> di V' ü A Si % Vf m 111 V m lin üsf 8$ St * fr H (Q .H •n ~ü H H m Vf Vi- m Püf V. m üf Vi o" Ttr D 1 5o o H s: o" o o H o 11 ro Ül H °Il en H o II IIA N) ^ en
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2SA1897
2SAI897itmrniitH
IEI-620)
SK FN 521
2SA1897
T-100
paps7k
V/SK FN 521
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2sk82
Abstract: ifoc 2SK823 JI 32
Text: M O S Field E ffe ct P o w e r T ran sis to r 2SK823 N f t ^ N 7 -M O S I 2S K 823Ü , l f f l > h ^ > * T7 — MOS F E T ffii/CM S < , X - i -? -f > FET £|-5f£[21 W Ì : mm T ? f • f l T Ü >), ÏÜJSÎÈX ^ <y -f > r « - i i 4 . 7 MA X . 15 . 7 M A X .
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2SK823
2sk82
ifoc
2SK823
JI 32
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uPD71084
Abstract: FZ 300 R 06 KL UPD71084G D71084 UPD71084C V30TM P18C PD70116 PD71084 IC-6390A
Text: NEC Ì i f / \ M O S In te g ra te d C irc u it f 7 / ¿¿ P D 7 1 0 8 4 ÌÌ, X fc ^ n ¿ P < y D 7 >y 1 ? • s* VX 8 4 •x x ^ v — 9 / \- y 4 ' < T t o n m OC M O S 7 ° n -feX O ^ P D 7 0 1 0 8 « lJ^ j^ V 2 0 ), o % m m t W T L i r ? 7 O ux ? ;m
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TS484
raTg14
uPD71084
FZ 300 R 06 KL
UPD71084G
D71084
UPD71084C
V30TM
P18C
PD70116
PD71084
IC-6390A
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2SK2133
Abstract: 2SK2133-Z MP-25 MP-25Z CMT-10
Text: zr— 'i? NEC ^ • £ /— h M O S ^ -^ 5 e j!j^ /\0r7 - M O S FET M O S Field E ffect P o w e r T ran sistors 2SK2133, 2SK2133-Z N ^ Ÿ T W U /x V -M O S f e t i t f f l 2SK 2133, 2 S K 2 1 3 3 -Z l i N i t :Ê . 7 , < i 7 - MOS FET T 't T * ' U ¡Ü IS
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2SK2133,
2SK2133-Z
2SK2133-Z
2SK2133
IEI-620)
MP-25
O-220AB)
MP-25Z
2SK2133
MP-25
MP-25Z
CMT-10
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TC-7606
Abstract: 2SK1283
Text: M O S Field Effect Pow er Transistor 2SK1283 7 /< 2SK 1283 fi, F E T T , N > 5 V m i l 1? ; * I C X 4 7 f > FET K f f p '- 'V — M O S K x 6 X T to i& ir y f& ÏA T , y i / / 0 ft -M O S ', x ^ y f -> y m t b t z ls b , i - > y°ff m ï\n z- g kïà T to
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2SK1283
2SK1283
TC-7606
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ac05d
Abstract: AC05DJM AC05DJM-Z AC05FJM AC05FJM-Z AC05F
Text: • 5 /— h NEC A C 0 5 r jJ M , 400 V, A C 05D J M , A C 0 5 D J M -Z A C 0 5 F J M , A C 0 5 F J M -Z r 5 A A C 05r jJM -Z i i , m b * TRIAC 5 A K TRIAC T , m O il L t ° - ? t 600 V V t o # m o W / ' J v K I C iz M M ù ^ m m W o — h h 'J y <, o É A C 05r jJM -Z
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rAC05DJM,
AC05DJM-Z
AC05FJM,
AC05FJM-Z
AC05r
UL94V-0)
OEi-620)
AC05DJM,
ac05d
AC05DJM
AC05FJM
AC05FJM-Z
AC05F
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D17012GF
Abstract: 78MEC D17012GF-011 D17012G ltaft et 4-1-fm bfy40 d17012 tlu 011 uPD6121G
Text: i r — • ts— h Ü 5 È M O S Â « @ £ & N E M O S Integrateci Circuit C j F M , M P L L J l ) W Æ u , L W S è v P 1 D f n - t > i r 7 (¥ # c ) - 9 - < 1 2 G F - 1 1 m h P “ 7 >u P D 1 7 0 1 2 G F -0 1 1 {â ^ :tâ :^ lÆ iiO P L L jl> ra '> > iz -y -< 1 f^ ïfc F M ) MW, L W if
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//PD17012GF-011
200MHz7Â
TFM18j^
D17012GF
78MEC
D17012GF-011
D17012G
ltaft
et 4-1-fm
bfy40
d17012
tlu 011
uPD6121G
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vlt 2900
Abstract: uPD78P334 UPD78P334LQ 78p334 78P334LQ IC-8075 s13s3 T02I TFK 082 MPD78P334
Text: • 5/— h M osm m m s& M O S Integrated Circuit /¿PD78P334 1 6 / 8 tf "y V • > > //PD 78P334 It, "y~? • v> f ^ □ ¿«PD 78334C Q rtg|$v*;? ROM •7> • i '- f A P R O M S S . B , —J tf c 'I t fc, EPROM S n M i, b° zl — 9 • ? -f A PROM i f c t i EPROM U S # f t x . / c n nn 'C f „
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uPD78P334
78P334
78334C
PD78334
32768X8
J2T43Bt\
24-i-
vlt 2900
UPD78P334LQ
78p334
78P334LQ
IC-8075
s13s3
T02I
TFK 082
MPD78P334
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2SJ197
Abstract: No abstract text available
Text: •7s— S • 5 / — h- NEC ^ MOS M O S Field E ffe c t T ran sis to r 2SJ197 MOS F E T 2SJ197 l i , P f t * V W & MOS F E T T", 5 & ± \ \ z i IC CO ^ - {È • mm) y f- > z i i t - t o h ^ MOS F E T Ü 5}- > m iifr 'i& < , x ^ y f > ^"#14 & i à t l X
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2SJ197
2SJ197
O2SK1483
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2SJ328
Abstract: 2SJ328-Z J0502
Text: NEC M O S ^ l # ^ l / \ “7 - M O S F E T M O S Field Effect P ow e r Transistors 2SJ328,2SJ328-Z P ^ q U U /N ^ - M x 2 S J 3 2 8 1 ÎP 5 1 + J U W -M O S FETT * O S F E T i f f i m tt : m m ) > S S * ' i''{6 < X -f •> Y 7 ? - E lï# ^ D C - D C = l> /S - ^ iC Â T !- r o £ £ ,
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2SJ328
2SJ328-Z
2SJ328ttP?
bT2SJ3291f
IEI-620)
2SJ328
2SJ328-Z
J0502
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e5es
Abstract: IEGT nec 05d 51ti BA 9706 K cxt2 HP 1003 WA NEC CPUii POB1 IC CMOS7
Text: r M OS Integrated Circuit /¿PD17P402 * t i t ^ m 4 fcf'y N • •v - f ? □ = ] > h P - 7 /¿PD17P402 i, /¿PD17402£>P^VX?ROM £, 7 > • £ < A P R O M T 'B £ & tL* I«K i T T o fi P D17P402 « , 7 P 7 A 0 W # Jt £ / jP D 1 7 P 4 0 2 C 7 3 ^ ^ t4 (fc jg fc S ftftif) l i ,
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uPD17P402
PD17402£
D17P402
D17402
16K/W
8192X16
PD17P402GC-3B9
U10427JJ1VQDS00
PP17P402
e5es
IEGT
nec 05d
51ti
BA 9706 K
cxt2
HP 1003 WA
NEC CPUii
POB1 IC
CMOS7
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TRANSISTOR si 6822
Abstract: SI 6822 PA2981C uPA2981 transistor 6822 si TRANSISTOR 6822 si 6822 transistor 6822 TRANSISTOR UPA2982 TRANSISTOR NPN 6822
Text: M 'ê ' h =7 C o m p o u n d Transistor MP x t° ^ M > ' □ > h ^ ^ LED, A 2 9 8 1 , 2 9 8 2 ^ V 7 °, ^ T U"f «H— -T ¿¿PA2981, 2982ÌÌ, P N P , N PN F 7 y VsX i 7 t H B Î f f i i ' 1 4* Z>, Hiïl V - X f t i 8 ¡ M f à M f à r - >) > h > h 9 > P X ÿ T ^ 4 T to
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uPA2981
uPA2982
TRANSISTOR si 6822
SI 6822
PA2981C
transistor 6822 si
TRANSISTOR 6822
si 6822 transistor
6822 TRANSISTOR
TRANSISTOR NPN 6822
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IC-8857
Abstract: fbise t460 transistor bth 200 63445-5 UPA674T
Text: : r — — h '> > ; □ > h 7 > v x ^ PA674T Silicon Transistor N P N / P N P X fc f£ ^ V U ^ > h 7 / / P A 6 7 4 T « S jI^ - f 7 f > ^ h 7 > v X ^ ^ > y U * > 2 U ? 2 Ü IŸ F « U > V X ^ m O .: mm - Ï - m ìg iÈ D fà ± t > j:t fm m 3 x S ^ lM t c » ® u S - r o
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uPA674T
IEI-620)
ETS14
IC-8857
fbise
t460 transistor
bth 200
63445-5
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TC7988
Abstract: 2SK2158 MARKING J1A transistor WT7 J Fet marking 2 AW marking N00 3250Q
Text: M O STféïl-f^ jÎJiP: h 37 > v J X ^ M O S Field Effect Transistor r ^ j_ C I E • •fc I ÌK N 2 S K 2 1 5 8 MOS FET r ü iH X -f y 2 S K 2 1 5 8 I Î1.5 V l E l i £ -f U , fÉ ÎŒ T ig B T 't , ÿ 9 Æ3 * J U i ^ M O S F E T T 5* A 'O K -7 - f 'V y
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2SK2158
2SK2158IÃ
73pDpÃ
IEI-620)
1-N00
TC7988
2SK2158
MARKING J1A
transistor WT7
J Fet marking 2 AW
marking N00
3250Q
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2SD1000
Abstract: IC HE 4011 2SB799 2SD100 TEB-528 2SD1000 TC-5494A WFs transistor
Text: ?— S • Ss— H Silicon T ra n s is to r 2SD1000 o - t — r 'A * T > m m m i •mm - 7 °m < T ) K 7 4 2 S B 7 9 9 ¿ 3 yy°') ? 'jr f È f f l e '# ti~0 O/J'A^’C P t ^ '^ ^ ^ > ¡ftiiŒ T 'i) < 5o 1.5+0.1 p m = 2 .0 m w ± 0 .7 mmX Il 3 U 7 y W 3
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2SD1000
2SB799
OT-89)
PWS10
cycleS50
2SD1000
IC HE 4011
2SD100
TEB-528 2SD1000
TC-5494A
WFs transistor
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TC-8008
Abstract: 2SJ355 xz43
Text: 7 s— 9 • 3/ - h NEC M O S ^ f ^ Jü K 7 > V * ^ M O S Field Effect Transistor 2SJ355 4 ^ 1/ M O S FET a s ja s s iiP ^ + ^ -M s m /io s f e t z \ * 1C <t 5 ¡ S i g i g l i if s m è & ' X Y -y * > f m * - ? t * Ü P ° P B + > g f i L * rf i < ü t è : mm)
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2SJ355
2sj355tip51-p^
iei-620)
TC-8008
2SJ355
xz43
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2SK872
Abstract: IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717
Text: M O S Field Effect Pow er Transistor 2SK872 N f t ^ ' ° 7 -M O S i 2 S K 8 7 2 i, N T '* > X ^ <, X >f -y f- > / ?• > /''.iii1 !?. # f f l — MOS F E T ( - ¥ - f Ì ! mm *s'i*^ lT J3 tj , ¡ÉfJSlìSEX / D C - D C 3 > ^ '- ^ i:iilt t „ m ° V d ss
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2SK872
2SK872
IRF 545
TRANSISTOR b 772 p
UPC1100
TLE 6299 R
MFE 521
261717
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fcf - 4 94v - 0 _ 1
Abstract: FZJ 131 IC-9083 UP1713 75tti 3tf 31 n4 umi D1713 MTI BD ic9083
Text: i. I I ÎK I M E C Y ^ MOS M O S # [l]fê In te g r a te d C ir c u it /¿ P D 1 7 1 3 4 B ,1 7 1 3 6 B '¡ 'm 4 fcÎ 7 h • u m 'y y 0 * h P - 7 ¿¿PD17134B, 17136BÌÌ, 8 fcT'y h A/D 3 >/<— $ 4 ^ * ; u , ? < (3 ^ + * ; u ) , A C - t z P ^ P ^ f è
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uPD17134B
uPD17136B
//PD17134
fcf - 4 94v - 0 _ 1
FZJ 131
IC-9083
UP1713
75tti
3tf 31
n4 umi
D1713
MTI BD
ic9083
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ic SE 135
Abstract: 00jT K49H
Text: i r — S* • i s — h BA1A4Z Compound Transistor Î& ÎÆ 4# ' r t ü t P N P x □ ^ - fi i t : mm) o ^ M T X i t ÿ f i l l T V ' Î t » ( R i = 10 4 k£2) 6° ¥ O B A 1 A 4 Z b = > > * Ê * JS * Æ fê (T a = n 9 n V 9 9 - 3 - 1 3 V 3 u- 9 y •
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PWS10
CycleS50
ic SE 135
00jT
K49H
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2sk1150
Abstract: b 772 my1 PS7K 2SK 1411 t8506
Text: MOS M O S F ield E ffe c t P o w e r T ra n s is to r S 2 7 N x — *y * M O S F E K 1 1 5 T > I t f f l 2SK 1150 Ü , * N f - i$ ;« ^ - 7 - M \z j : b 7 * > m t# < , -i f > F E T f, 5V I C <50tti - 9 , ^ ^ I g g j^ ^ N '- y r ^ .fi : mm / t f t - t .
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2SK1150
50tti
2sk1150
b 772 my1
PS7K
2SK 1411
t8506
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2SK1149
Abstract: transistor sb 772
Text: Mos M O S Field Effect Pow er Transistor 2SK1149 N — l ' / ' r7 X 'f -y 9 - T . m 2SK1149 i, N - f - r * iz X & M O F E T > m MOS F E T T”, 5 V « i l * IC ¿Diti ¡ t S f g g j ^ - S T t È ^ it a x : mm 7 l f f t o i ' S i ^ ' i 7 f >J î ! * W D C - D C
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2SK1149
2SK1149
transistor sb 772
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kb 778 o g 5
Abstract: 3e tRANSISTOR kb 778 UA61
Text: — S 7 • $ / — h f ê E 'ê ' > i> 7 * 9 -7 h Com pound Transistor / //PA 6118C ü, f# (c K-y V9 A 7 ¿ P A <r>Y'ÿ A °F IP 6 1 1 8 C t 7 * ffl 8 Elï# )StfO ] - 7 > y X ^ T H ' T f „ T T L ^ M O S L S I^ tB ÎJÎS f- d ^ h - fr- C , ^ - X fc îfc fc iS lIIR t
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juPA611
PA6118Cii,
kb 778 o g 5
3e tRANSISTOR
kb 778
UA61
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