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    28F01090 Search Results

    28F01090 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MR28F010-90 Rochester Electronics LLC Flash, 128KX8, 90ns, CQCC32, LCC-32 Visit Rochester Electronics LLC Buy
    MD28F010-90 Rochester Electronics LLC Flash, 128KX8, 90ns, CDIP32, HERMETIC SEALED, CERDIP-32 Visit Rochester Electronics LLC Buy
    TN28F010-90-G Rochester Electronics LLC 28F010 - 128K X 8 Flash Visit Rochester Electronics LLC Buy
    TF28F010-90 Rochester Electronics LLC 28F010 - 128K X 8 Flash Visit Rochester Electronics LLC Buy
    MR28F010-90/R Rochester Electronics LLC 28F010 - 128K X 8 Flash, Mil Temp Visit Rochester Electronics LLC Buy
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    28F01090 Price and Stock

    Rochester Electronics LLC MT28F010-90

    IC FLASH 1MBIT PARALLEL 32PLCC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT28F010-90 Bulk 2
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    Rochester Electronics LLC MR28F010-90

    FLASH, 128KX8, 90NS, CQCC32
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    DigiKey MR28F010-90 Bulk 2
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    Rochester Electronics MR28F010-90 1,425 1
    • 1 $157.68
    • 10 $157.68
    • 100 $148.22
    • 1000 $134.03
    • 10000 $134.03
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    Rochester Electronics LLC TF28F010-90

    FLASH, 128KX8, 90NS, PDSO32
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    DigiKey TF28F010-90 Bulk 8
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    Rochester Electronics TF28F010-90 2,074 1
    • 1 $37.24
    • 10 $37.24
    • 100 $35.01
    • 1000 $31.65
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    Rochester Electronics LLC MR28F010-90-R

    MR28F010-90/R
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    DigiKey MR28F010-90-R Bulk 2
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    Rochester Electronics LLC MD28F010-90-R

    MD28F010-90/R
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    DigiKey MD28F010-90-R Bulk 2
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    Find more 28F01090 price and stock on Findchips.com

    28F01090 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: CAT28F010 Licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES • Commercial, industrial and automotive ■ Fast read access time: 90/120 ns temperature ranges ■ Low power CMOS dissipation: ■ On-chip address and data latches –Active: 30 mA max CMOS/TTL levels


    Original     		CAT28F010 32-pin CAT28F010 PDF

    28F010

    Abstract: TN28F010 N28F010-120 TN28F010-120 1N914 80C186 tn28f010-150 PLCC pin configuration 80c186 29020
    Text: E 28F010 1024K 128K X 8 CMOS FLASH MEMORY 8 n n n n n n n Flash Electrical Chip-Erase  1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  2 Second Chip-Program n n 100,000 Erase/Program Cycles 12.0 V ±5% V PP


    Original     		28F010 1024K 28F010 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 N28F010-120 TN28F010 N28F010-120 TN28F010-120 1N914 80C186 tn28f010-150 PLCC pin configuration 80c186 29020 PDF

    1N914

    Abstract: 28F010 28F010-12 CAT28F010
    Text: H CAT28F010 EE GEN FR ALO 1 Megabit CMOS Flash Memory LE Licensed Intel second source A D F R E ETM FEATURES • Commercial, industrial and automotive ■ Fast read access time: 90/120 ns temperature ranges ■ Low power CMOS dissipation: ■ On-chip address and data latches


    Original     		CAT28F010 32-pin 1N914 28F010 28F010-12 CAT28F010 PDF

    CAT28F010

    Abstract: 28F010-70 1N914 28F010-12 Nippon capacitors
    Text: CAT28F010 CAT28F010 Licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES • Commercial, Industrial and Automotive Tem- ■ Fast Read Access Time: 70/90/120 ns perature Ranges ■ Low Power CMOS Dissipation: ■ On-Chip Address and Data Latches


    Original     		CAT28F010 32-pin 300-T CAT28F010 28F010-70 1N914 28F010-12 Nippon capacitors PDF

    29F020

    Abstract: 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 28F010 80C186 E28F010 N28F010
    Text: E 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 n n n n n n n Flash Electrical Chip-Erase  1-Mbit: 1 Second Typical Chip-Erase  2-Mbit: 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  1-Mbit: 1 Second Chip-Program


    Original     		28F010 28F020 32-Lead P28F010-90 P28F010-120 P28F010-150 TN28F010-90 TN28F010-120 TN28F010-150 TP28F010-90 29F020 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 80C186 E28F010 N28F010 PDF

    1N914

    Abstract: 28F010 28F010-12 CAT28F010
    Text: CAT28F010 Licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES • Commercial, industrial and automotive ■ Fast read access time: 90/120 ns temperature ranges ■ Low power CMOS dissipation: ■ On-chip address and data latches –Active: 30 mA max CMOS/TTL levels


    Original     		CAT28F010 32-pin 1N914 28F010 28F010-12 CAT28F010 PDF

    QD03-2

    Abstract: No abstract text available
    Text: CAT28F010 L _ V ^ S m T " CAT2 8 F010 Licensed Intel 1 Megabit CMOS Flash Memory Second S O U rc e FEATURES • Commercial, Industrial and Automotive Tenv perature Ranges ■ Fast Read Access Time: 70/90/120/150 ns ■ Low Power CMOS Dissipation: -Active: 30 mA max CMOS/TTL levels


    OCR Scan     		CAT28F010 -32-pin 28F010 T28F010N I-90TE QD03-2 PDF

    TN28F010

    Abstract: 29020
    Text: 1024K 128K X 28F010 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chlp-Erase ■ Quick Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		1024K 28F010 USA/E69Q/1093/5K/MS TN28F010 29020 PDF

    26f010

    Abstract: 28F010-12 CAT28F010 bdt 95a
    Text: s CAT28F010 CAT2 8 F0 1 0 Licensed Intel 1 Megabit CMOS Flash Memory S econd S o u rc e FEATURES • Fast Read Access Time: 70/90/120/150 ns ■ Commercial, Industrial and Automotive Tem­ perature Ranges ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels


    OCR Scan     		CAT28F010 CAT28F010 -32-pin 28F010F12 CAT28F010NI-90TE7 26f010 28F010-12 bdt 95a PDF

    28F010N

    Abstract: 28F01090 1N914 28F010-12 CAT28F010
    Text: C lA T CAT2 8 F010 A 1 _ Y s ~ r licensed Intel second source 1 Megabit CMOS Flash Memory FEATURES • Commercial, Industrial and Automotive Temperature Ranges ■ Fast Read Access Time: 70/90/120 ns ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels


    OCR Scan     		CAT28F010 -32-pin 128Kx 28F010 CAT28F010NI-90T 5005-0A 28F010N 28F01090 1N914 28F010-12 PDF

    29020

    Abstract: No abstract text available
    Text: in te i 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm — 10 ju-s Typical Byte-Program — 2 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read


    OCR Scan     		28F010 1024K 28F010-65 28F010-90 29020 PDF

    PPH 2222 36

    Abstract: 29f020 P28F010-150 29020 28F010-150N 28f010
    Text: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface


    OCR Scan     		28F010 28F020 32-Lead 28F010-90 28F010-120 28F010-150 28F020-90 PPH 2222 36 29f020 P28F010-150 29020 28F010-150N PDF

    29020

    Abstract: No abstract text available
    Text: i n y 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash E lectrical C h ip -E rase — 1 S ec o n d T yp ic al C h ip-E rase Q uick Pulse P ro g ram m in g A lg orith m — 10 jus T yp ic al B y te-P ro g ra m — 2 S ec o n d C h ip -P ro g ram • ■ — M axim um L atch -U p Im m u n ity


    OCR Scan     		28F010 1024K 28F010-65 28F010-90 29020 PDF

    PLD intel

    Abstract: intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD
    Text: INTEL CORP MEMORY/PL] / SbE I 4fl2bl7b Q07bBbl T i l « I T L P in te l 28F010 1024K (128K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 2 Second Chip-Program


    OCR Scan     		Q07bBbl 28F010 1024K NonvolaF010-120 TN28F010-120 P28F010-150 N28F010-150 N28F010-90V05 E28F010-120 E28F010-150 PLD intel intel 28F010 07B27 interfacing eprom and eeprom 28f010-150 intel PLD PDF

    intel 28F010

    Abstract: N28F010-120 28F010 80C186 E28F010
    Text: 28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick Pulse Programming Algorithm — 10 ju.s Typical Byte-Program — 2 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % VPP • Command Register Architecture for


    OCR Scan     		28F010 1024K AP-316, AP-325 from3000 28F010-65 28F010-90 4fl2bl75 intel 28F010 N28F010-120 28F010 80C186 E28F010 PDF

    Untitled

    Abstract: No abstract text available
    Text: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write interface ■ Quick-Pulse Programming Algorithm — 10 ¿is Typical Byte-Program


    OCR Scan     		28F010 1024K EF010-120 TF28F010-120 ER-20, ER-24, RR-60, AP-316, AP-325 PDF

    Untitled

    Abstract: No abstract text available
    Text: 28F010 1024K 128K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 [is Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp


    OCR Scan     		28F010 1024K 32-Pin 32-Lead PDF

    Untitled

    Abstract: No abstract text available
    Text: FINAL Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 (iA maximum standby current


    OCR Scan     		Am28F010 32-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: FINAL AMD£I A m 2 8 F 0 1 0 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ — 10 ps typical byte-program — 100 pA maximum standby current


    OCR Scan     		32-pin Am28F010 PDF

    29F020

    Abstract: 28F010 28F020 80C186 E28F010 N28F010 P28F010 29020
    Text: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/M icrocontroller Compatible Write Interface


    OCR Scan     		28F010 28F020 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 E28F010-150 TE28F010-90 29F020 28F020 80C186 E28F010 N28F010 P28F010 29020 PDF

    intel 28F010

    Abstract: 28f01o-120 N28F010-120 28F010 80C186 E28F010 N28F010 P28F010 28f010-200 29020
    Text: 1024K 128K X 28F010 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick Pulse Programming Algorithm — 10 jas Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		28F010 1024K HR-20, ER-24, ER-28, RR-60, AP-316, AP-325 28F010-65 28F010-90 intel 28F010 28f01o-120 N28F010-120 28F010 80C186 E28F010 N28F010 P28F010 28f010-200 29020 PDF

    AM28F010

    Abstract: No abstract text available
    Text: FINAL AMD£I A m 2 8 F 0 1 0 1 Megabit 128 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ — 10 ps typical byte-program — 100 pA maximum standby current


    OCR Scan     		Am28F010 32-Pin PDF

    TN28F010

    Abstract: No abstract text available
    Text: 28F010 1024K 128K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chlp-Erase ■ Quick Pulse Programming Algorithm — 10 )j,s Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp


    OCR Scan     		28F010 1024K 32-Pin 32-Lead 28F010-65 28F010-90 TN28F010 PDF

    IS28F010

    Abstract: No abstract text available
    Text: M I S 2 8 F 0 1 0 _ _ _ 131,072 x 8 CMOS FLASH MEMORY JULY 1997 FEATURES • High performance - 45 ns maximum access time • CMOS low power consumption - 30 mA maximum active current -100 fiA maximum standby current


    OCR Scan     		IS28F010_ 32-pin JULY1997 600-mil IS28F010-12W IS28F010-12PL IS28F010-12T IS28F010 PDF