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Catalog Datasheet	MFG & Type	PDF	Document Tags
BD 147 Abstract: L1000-BD 47146 BD 747 MMIC AMPLIFIER 6-20 GHZ TS3332LD XL1000-BD XL1000-BD-000V Au Sn eutectic Text: 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier L1000-BD July 2007 - Rev 24-Jul-07 Features Self Bias Architecture Small Size 3.0 or 5.0 V Operation 20.0 dB Small Signal Gain 2.0 dB Noise Figure +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing	Original	PDF	L1000-BD 24-Jul-07 MIL-STD-883 XL1000-BD-000V XL1000-BD-EV1 XL1000 BD 147 L1000-BD 47146 BD 747 MMIC AMPLIFIER 6-20 GHZ TS3332LD XL1000-BD XL1000-BD-000V Au Sn eutectic
L1000 16 Abstract: 4846-1 XL1000 power supply 47146 ablestick 550 84-1LMI XL1000 45980 air 7306 Text: 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier L1000 April 2005 - Rev 01-Apr-05 Features Chip Device Layout Self Bias Architecture Small Size 3.0 or 5.0 V Operation 20.0 dB Small Signal Gain 2.0 dB Noise Figure +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing	Original	PDF	L1000 01-Apr-05 MIL-STD-883 L1000 16 4846-1 XL1000 power supply 47146 ablestick 550 84-1LMI XL1000 45980 air 7306
L1000-BD Abstract: XL1000-BD-EV1 XL1000-BD Text: 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier L1000-BD January 2010 - Rev 18-Jan-10 Features Self Bias Architecture Small Size 3.0 or 5.0 V Operation 20.0 dB Small Signal Gain 2.0 dB Noise Figure +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing	Original	PDF	L1000-BD 18-Jan-10 MIL-STD-883 aL1000-BD-EV1 XL1000 L1000-BD XL1000-BD-EV1 XL1000-BD
47146 Abstract: L1000-BD TS3332LD XL1000-BD XL1000-BD-EV1 Text: 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier L1000-BD July 2007 - Rev 24-Jul-07 Features Self Bias Architecture Small Size 3.0 or 5.0 V Operation 20.0 dB Small Signal Gain 2.0 dB Noise Figure +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing	Original	PDF	L1000-BD 24-Jul-07 MIL-STD-883 XL1000-BD-000V XL1000-BD-EV1 XL1000 47146 L1000-BD TS3332LD XL1000-BD XL1000-BD-EV1
XL1000-BD Abstract: XL1000-BD-000V XL1000-BD-EV1 28LN3UA0338 Text: XL1000-BD Low Noise Amplifier 20.0-40.0 GHz Rev. V1 Features Chip Device Layout •       Self Bias Architecture Small Size 3.0 or 5.0 V Operation 20.0 dB Small Signal Gain 2.0 dB Noise Figure +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure	Original	PDF	XL1000-BD MIL-STD-883 XL1000-BD XL1000-BD-000V XL1000-BD-EV1 28LN3UA0338
Untitled Abstract: No abstract text available Text: 20.0-40.0 GHz GaAs MMIC Low Noise Amplifier L1000 April 2005 - Rev 01-Apr-05 Features Chip Device Layout Self Bias Architecture Small Size 3.0 or 5.0 V Operation 20.0 dB Small Signal Gain 2.0 dB Noise Figure +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing	Original	PDF	L1000 01-Apr-05 MIL-STD-883