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    TSOP28 memory

    Abstract: M28LV16 PDIP24 W1217
    Text: S G S -T H O M S O N iyitEïïïïÂQDtES M 2 8 L V 1 6 LOW VOLTAGE 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION • ■ ■ ■ ■ ■ ■ ■ ■ FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE:


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    PDF M28LV16 200ns PDIP24 TSOP28 M28LV16 TSOP28 TSOP28 memory PDIP24 W1217

    28LV16

    Abstract: No abstract text available
    Text: SGS-THOMSON 28LV16 LOW VOLTAGE 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: - 64 Bytes Page Write Operation - Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:


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    PDF M28LV16 200ns PDIP24 TSOP28 M28LV16 28LV16