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IXYS Corporation IXFT28N50Q MOSFET N-CH 500V 28A TO268
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DigiKey	IXFT28N50Q	Box				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXFH28N50Q MOSFET N-CH 500V 28A TO247AD
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DigiKey	IXFH28N50Q	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

28N50Q Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information VDSS = 500 V = 28 A ID25 RDS on = 0.20 Ω IXTH 28N50Q IXTT 28N50Q Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR	Original	28N50Q O-247 728B1 123B1 728B1 065B1	PDF
28n50 Abstract: No abstract text available Text: Advanced Technical Information IXFH 28N50Q IXFT 28N50Q HiPerFETTM Power MOSFETs Q-Class VDSS = 500 V = 28 A ID25 RDS on = 0.20 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	28N50Q O-247 728B1 123B1 728B1 065B1 28n50	PDF
28N50 Abstract: No abstract text available Text: Advanced Technical Information VDSS = 500 V = 28 A ID25 RDS on = 0.20 Ω IXTH 28N50Q IXTT 28N50Q Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR	Original	28N50Q O-247 728B1 123B1 728B1 065B1 28N50	PDF
28N50Q Abstract: SiS 486 28n50 Text: Advanced Technical Information IXFH 28N50Q IXFT 28N50Q Power MOSFETs Q-Class VDSS = 500 V = 28 A ID25 RDS on = 0.20 Ω trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500	Original	28N50Q 28N50Q O-247 O-268 728B1 123B1 065B1 SiS 486 28n50	PDF
28N50 Abstract: No abstract text available Text: Advanced Technical Information IXFH 28N50Q IXFT 28N50Q HiPerFETTM Power MOSFETs Q-Class VDSS = 500 V = 28 A ID25 RDS on = 0.20 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	28N50Q O-247 O-268 728B1 28N50	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXTH 28N50Q IXTT 28N50Q Power MOSFETs Q-Class VDSS = 500 V = 28 A ID25 RDS on = 0.20 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR	Original	28N50Q O-247 728B1 123B1 728B1 065B1	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information VDSS = 500 V = 28 A ID25 RDS on = 0.20 Ω IXFH 28N50Q IXFT 28N50Q HiPerFETTM Power MOSFETs Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	28N50Q O-247 O-268 728B1	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF