Untitled
Abstract: No abstract text available
Text: Power transistor 60V, 2A 2SC5880 Features 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2093
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2SC5880
200mV
100mA)
2SA2093
C5880
R1120A
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A2093
Abstract: 2SA2093 2SC5880
Text: 2SA2093 Transistors Power transistor −60V, −2A 2SA2093 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 30ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −0.1A)
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2SA2093
65Max.
-200mV
2SC5880
A2093
A2093
2SA2093
2SC5880
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A2093
Abstract: 2SA2093 2SC5880
Text: 2SA2093 Transistors Power transistor −60V, −2A 2SA2093 zFeatures 1) High speed switching. (tf : Typ. : 30ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −0.1A) 3) Strong discharge power for inductive load and
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2SA2093
-200mV
2SC5880
A2093
A2093
2SA2093
2SC5880
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A2093
Abstract: 2SA2093 2SC5880
Text: 2SA2093 Transistors Power transistor −60V, −2A 2SA2093 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 30ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1.0A, IB = −0.1A)
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2SA2093
65Max.
-200mV
2SC5880
A2093
A2093
2SA2093
2SC5880
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A2093
Abstract: 2SA2093
Text: Power transistor 60V, 2A 2SA2093 Dimensions (Unit : mm) Features 1) High speed switching. (tf : Typ. : 30ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and
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2SA2093
200mV
2SC5880
A2093
R1120A
A2093
2SA2093
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4075 datasheet
Abstract: 7116 50161 2SA2093
Text: SPICE PARAMETER 2SA2093 by ROHM TR Div. * 2SA2093 PNP BJT model * Date: 2006/11/14 .MODEL 2SA2093 PNP + IS=1.0000E-12 + BF=237.46 + VAF=100 + IKF=3.7116 + ISE=1.0000E-12 + NE=1.4875 + BR=3.4075 + VAR=100 + IKR=.23214 + ISC=19.134E-12 + NC=1.7098 + NK=.86947
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2SA2093
Q2SA2093
0000E-12
134E-12
941E-3
08E-12
19E-12
71E-12
4075 datasheet
7116
50161
2SA2093
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2SA2093
Abstract: 2SC5880
Text: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 zExternal dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 zFeatures 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA)
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2SC5880
65Max.
200mV
100mA)
2SA2093
C5880
2SA2093
2SC5880
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2SA2160
Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series
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O-220FM
47P4869E
2SA2160
2SA2149
2SC6005
RQW200
rdx100n45
RQA200N03
rqw200n03
RLA130N03
rdx*100n45
2sc6027
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pioneer mosfet audio amp ic
Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114
Text: Product Catalog Bipolar Transistors Digital Transistors Discrete Semiconductors 2008-Feb. www.rohm.com ROHM Bipolar Transistors / Digital Transistors Bipolar Transistors are currently recognized as essential key devices for the electronics industry. ROHM as a leading company is supplying a great
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2008-Feb.
SC-75A
OT-416
50P5876E
pioneer mosfet audio amp ic
12V ENERGY LIGHT CIRCUIT DIAGRAM
vmn3 package
DTC143T datasheet
TRANSISTOR SMD catalog
Equivalent transistors for UMD2N
smd ya transistor
2SD2211
2SA1576UB
2SC6114
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2SA2093
Abstract: 2SC5880 c5880 60V transistor npn 2a switching applications
Text: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 zDimensions (Unit : mm) zFeatures 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and
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2SC5880
200mV
100mA)
2SA2093
C5880
2SA2093
2SC5880
c5880
60V transistor npn 2a switching applications
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2SC6144
Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
Text: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.
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R0039A
52P6215E
2SC6144
IMD16A
potential divider
2SA1576UB
DTD513Z
MP6T3
2SCR514
2SA1514K equivalent
2SCR543
2SC6114
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c5880
Abstract: 2SA2093 2SC5880 2SA20
Text: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA)
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2SC5880
65Max.
200mV
100mA)
2SA2093
C5880
c5880
2SA2093
2SC5880
2SA20
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Untitled
Abstract: No abstract text available
Text: 2SC5880 Transistors Power transistor 60V, 2A 2SC5880 !External dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA)
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2SC5880
200mV
100mA)
2SA2093
65Max.
C5880
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2sc5922
Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
Text: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability
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200mW
500mW
15Min.
85Max.
15Max.
2sc5922
2SC5734
2SC5917
2SC5989
2SA2054
2sc5919
2SC5987
2SC5734K
2SC5918
2SC5982
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2SA1576UB
Abstract: 2SC1740s equivalent transistor digital 47k 22k PNP NPN 2sd198 2SC6114 2sc401 2SB1240 2SB1694 2SC5865 2sD2703
Text: 2009 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal an low profile models to high power products.
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R0039A
51P6029E
2SA1576UB
2SC1740s equivalent
transistor digital 47k 22k PNP NPN
2sd198
2SC6114
2sc401
2SB1240
2SB1694
2SC5865
2sD2703
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Untitled
Abstract: No abstract text available
Text: Power transistor 60V, 2A 2SC5880 Dimensions (Unit : mm) Features 1) High speed switching. (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load.
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2SC5880
200mV
100mA)
2SA2093
C5880
R1120A
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2SC5734K
Abstract: 2sc5917 2SC5734 2SA2054
Text: Excellence in Electronics 2005 Ver.1 T ransistor New Products Pari No. B V ceo lc Ip N PN M [A] [A] 2SA2048K 2SC5730K 30 1 2 2SA2054K 2SC5734K 90 0.5 1 Package SMT3 ^ Pc=0.2W " PNP Pari No. Package TSMT3 Pc=0.5W * W Package ATV P c=1W J L 'V BV ceo [V] hF:
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2SA2048K
2SA2054K
2SC5730K
2SC5734K
2SA2048
2SA2113
2SA2134
2SA2090
2SC5916
2SC5984*
2SC5734K
2sc5917
2SC5734
2SA2054
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