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    2SB612 Search Results

    2SB612 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB612 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB612 Unknown Cross Reference Datasheet Scan PDF
    2SB612 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB612 Unknown Silicon PNP Epitaxial Transistor, 80-100W Audio Amp Scan PDF
    2SB612 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB612 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB612A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB612A Unknown Cross Reference Datasheet Scan PDF
    2SB612A Unknown Silicon PNP Epitaxial Transistor, 80-100W Audio Amp Scan PDF
    2SB612A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB612A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB612A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SB612 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    100W AUDIO AMPLIFIER

    Abstract: 100W AUDIO ic AMPLIFIER 2SB612 2SD582
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB612 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -140V(Min) ·High Power Dissipation: PC= 100W(Max)@TC=25℃ ·Complement to Type 2SD582 APPLICATIONS ·Recommended for 80~100W audio amplifier output stage.


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    PDF 2SB612 -140V 2SD582 -50mA; -160V; 100W AUDIO AMPLIFIER 100W AUDIO ic AMPLIFIER 2SB612 2SD582

    2SD588

    Abstract: 2SB651 2SB669A 2SB618A 2SB641 2SB615 2Sb669 2SD588A 2SB618 2SB616 2SD586
    Text: Absolutes maximum ratings Ta=25ºC DC Current Gain fab/ft* Cob ºñ°í hFE VCE Ic (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 30W 2000-5A 150 -2 -3A 2SD560 (Tc=25ºC) 15000 -500 800 175 >50 -5 -100 30W -4A 150 120 -5 -500 (Tc=25ºC) -700 800 150 200 -1 -100 120*


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    PDF 000-5A 2SD560 2SD571 15kHz 2SD586 2SD718 2SD726 2SD727 2SD728 2SD731 2SD588 2SB651 2SB669A 2SB618A 2SB641 2SB615 2Sb669 2SD588A 2SB618 2SB616 2SD586

    STRS6307

    Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
    Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173


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    PDF 2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020

    sk40c

    Abstract: 2SB612 2SB612A 2SD582 "sia 3" SB612
    Text: 2SB612.2SB612A v U = i > PNP SIL IC O N 8 0 -1 0 0 W 2 SD 5 8 2 ,5 8 2 A t -1 >7°U P N P E P IT A X IA L 80~1 0 0 W A U D IO AMP. A U D IO O U T P U T Complementary pair with 2 S D 5 8 2 / A * TOm trlf'J A c c e s s o r i e s 1 . -< - X 2. X ; y f 3. E m itto r


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    PDF 2SB612 0-100W 2SD582 35max 2SD582/A SK40C YD40D Ta-25Â sk40c 2SB612A "sia 3" SB612

    SK40C

    Abstract: 2SD582 2SB612 2SD582A 2SB61
    Text: 2SD582.2SD582A •>'J-¡> SIL IC O N NPN i t 80-100W 2SB612,612A t3 NPN EPIT A X IA L 8 0 - 1 0 0 W AUDIO AM P. P O W E R O U T PU T Complementary pair with 2SB612/A > -f'J * > £ U I • ^ Accessories Base 2. i Ì 7 ? ! E m itt e r 3. 3 u Í7 ;? : C o lle c to r


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    PDF 0-100W 2SB612 2SB612/A 2SD582 SD582A f-150 Tc-25t; SK40C YD40D SK40C 2SD582A 2SB61

    transistor 2SB1142

    Abstract: sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788
    Text: SA0YO M IC A LE SS T 0-126M L T R A N SIST O R S F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting ♦ Plastic-covered heat sink facilitating high-density mounting ♦ Increased collector dissipation when a transistor alone is operated


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    PDF 0-126M T0-126ML) T0-126ML O-126 MT950123TR transistor 2SB1142 sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788

    2sb504

    Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
    Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St


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    PDF S029747 SS963& 2sb504 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2SC2990

    Abstract: a 1232 nec 2SC1216 2SC1681 2sc1324 2sc1741 2SC1173 2sc1239 2SC1959 2SC458A
    Text: - a « T y p e Bo. & £ Manuf. * 2SC 1219 ^ ı il * 2SC 1220 Sftbii * 2SC 1222 0 S * 2SC 1223 3 * 2SC 1224 2SC 1226A tö T fö T * 2SC 1228-'' * ± a * 2SC 1230 «±a * 2SC 1231 ı il ♦ 2SC 1232 Ä Ü S * 2SC 1235 = * * 2SC 1236 * 2SC 1 2 3 7 ^ * 2SC


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    PDF 2SC1959 2SC2001 2SC1213 2SC1317 2SC1741 2SC2002 2SC1213A 2SC1318 2SC1570 2SC2990 a 1232 nec 2SC1216 2SC1681 2sc1324 2sc1741 2SC1173 2sc1239 2SC458A

    2SB612K

    Abstract: 2SA1380 2SC3503 2sc4675 transistor TO-126 Outline Dimensions 2SA1249 2sa1507 Sanyo Semiconductor 2sc3417
    Text: smvo MICALESS T0-126ML TRANSISTORS F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting * Plastic-covered heat sink facilitating high-density mounting * Increased collector dissipation when a transistor alone is operated [T0-126ML:1. 3-1.51(18=25^)]


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    PDF T0-126ML) T0-126ML O-126 2SD826 2SB559 2SD439 2SB632K 2SB612K 2SB986 2SD1348 2SA1380 2SC3503 2sc4675 transistor TO-126 Outline Dimensions 2SA1249 2sa1507 Sanyo Semiconductor 2sc3417