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    2N060 Price and Stock

    Panduit Corp B2S12N0607

    BRAIDED BONDING STRAP, TWO-HOLE,
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    onsemi NTD32N06-001

    MOSFET N-CH 60V 32A IPAK
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    SMC Corporation of America KQ2N06-08

    One-Touch Fitting, 6 mm Tube Size, Male, KQ2 Series | SMC Corporation KQ2N06-08
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    RS KQ2N06-08 Bulk 277 3 Weeks 1
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    SMC Corporation of America KQ2N06-01A

    One-Touch Fitting, 6 mm Tube Size, R Thread, KQ2 Series | SMC Corporation KQ2N06-01A
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    SMC Corporation of America KQ2N06-01N

    One-Touch Fitting, 6 mm Tube Size, R Thread, KQ2 Series | SMC Corporation KQ2N06-01N
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    RS KQ2N06-01N Bulk 10
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    2N060 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N0608

    Abstract: Q67040-S4284 AS3500 SPB80N06S2-08 SPP80N06S2-08 2N060
    Text: SPP80N06S2-08 SPB80N06S2-08 Preliminary data OptiMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS 55 V • Drain-source on-state resistance RDS on 8 mΩ Continuous drain current ID 80 A Enhancement mode • Avalanche rated


    Original     		PDF SPP80N06S2-08 SPB80N06S2-08 P-TO220-3-1 Q67040-S4283 2N0608 P-TO263-3-2 Q67040-S4284 2N0608 Q67040-S4284 AS3500 SPB80N06S2-08 SPP80N06S2-08 2N060

    2n0607

    Abstract: 2n0607 equivalent IPI80N06S2-07 SP0002-18818 d68 smd code 2N06 IPP80N06S2-07 SP000218810 SP0002-18810 18818
    Text: IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 6.3 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 SP0002-18818 2N0607 2n0607 2n0607 equivalent IPI80N06S2-07 SP0002-18818 d68 smd code 2N06 IPP80N06S2-07 SP000218810 SP0002-18810 18818

    2n0605

    Abstract: BSPP80N06S2-05 SPB80N06S2-05 SPP80N06S2-05 6020G 6840H
    Text: SPP80N06S2-05 SPB80N06S2-05 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on max. SMD version 4.8 mΩ •=175°C operating temperature ID 80 A • Avalanche rated P-TO263-3-2 • Enhancement mode P-TO220-3-1


    Original     		PDF SPP80N06S2-05 SPB80N06S2-05 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4245 2N0605 P-TO263-3-2 2n0605 BSPP80N06S2-05 SPB80N06S2-05 SPP80N06S2-05 6020G 6840H

    2n0609

    Abstract: Q67060-S6025 Q67060-S6027 SPP80N06S2-09 3140PF 2N060 INFINEON PART MARKING to263
    Text: SPP80N06S2-09 SPB80N06S2-09 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature VDS 55 R DS on 9.1 m ID 80 A P- TO263 -3-2  Avalanche rated V P- TO220 -3-1  dv/dt rated Type SPP80N06S2-09 Package


    Original     		PDF SPP80N06S2-09 SPB80N06S2-09 Q67060-S6025 Q67060-S6027 2N0609 BSPP80N06S2-09 BSPB80N06S2-09, Q67060-S6027 3140PF 2N060 INFINEON PART MARKING to263

    2n0607

    Abstract: 2n0607 equivalent IPB80N06S2-07 IPI80N06S2-07 IPP80N06S2-07 PG-TO263-3-2 SP000218810 d68 smd code
    Text: IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 6.3 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 SP0002-18818 2N0607 2n0607 2n0607 equivalent IPB80N06S2-07 IPI80N06S2-07 IPP80N06S2-07 PG-TO263-3-2 SP000218810 d68 smd code

    2n0605

    Abstract: IPP80N06S2-05 ANPS071E IPB80N06S2-05 PG-TO263-3-2 DD44
    Text: IPB80N06S2-05 IPP80N06S2-05 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.8 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB80N06S2-05 IPP80N06S2-05 PG-TO263-3-2 PG-TO220-3-1 SP0002-18877 2N0605 2n0605 IPP80N06S2-05 ANPS071E IPB80N06S2-05 PG-TO263-3-2 DD44

    2n0609

    Abstract: 2n0609 data sheet Q67060-S6027 2N06 S6025 Q67060-S6025 smd TRANSISTOR code marking 8K SPB80N06S2-09 ANPS071E SPP80N06S2-09
    Text: SPP80N06S2-09 SPB80N06S2-09 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature VDS 55 V R DS on 9.1 mΩ ID 80 A P- TO263 -3-2 • Avalanche rated P- TO220 -3-1 • dv/dt rated Type SPP80N06S2-09


    Original     		PDF SPP80N06S2-09 SPB80N06S2-09 Q67060-S6025 Q67060-S6027 2N0609 BSPP80N06S2-09 BSPB80N06S2-09, 2n0609 2n0609 data sheet Q67060-S6027 2N06 S6025 Q67060-S6025 smd TRANSISTOR code marking 8K SPB80N06S2-09 ANPS071E SPP80N06S2-09

    2n0608

    Abstract: SP000218830 i 2n0608 IPI80N06S2-08 IPB80N06S2-08 IPP80N06S2-08 PG-TO263-3-2 marking D58
    Text: IPB80N06S2-08 IPP80N06S2-08, IPI80N06S2-08 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 7.7 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB80N06S2-08 IPP80N06S2-08, IPI80N06S2-08 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 SP0002-18830 2N0608 2n0608 SP000218830 i 2n0608 IPI80N06S2-08 IPB80N06S2-08 IPP80N06S2-08 PG-TO263-3-2 marking D58

    2n0607

    Abstract: SMD MARKING "68A" Q67060S60
    Text: SPI80N06S2-07 SPP80N06S2-07,SPB80N06S2-07 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature P- TO262 -3-1  Avalanche rated VDS 55 R DS on 6.6 m ID 80 A P- TO263 -3-2 V P- TO220 -3-1  dv/dt rated


    Original     		PDF SPI80N06S2-07 SPP80N06S2-07 SPB80N06S2-07 SPB80N06S2-07 Q67060-S6024 Q67060-S6026 Q67060-S6037 2N0607 SMD MARKING "68A" Q67060S60

    2N0605

    Abstract: 2N060 SPB80N06S2-05 SPP80N06S2-05 Q67040-S4255
    Text: SPP80N06S2-05 SPB80N06S2-05 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID •=175°C operating temperature P-TO263-3-2 • Avalanche rated 55 V 4.8 mΩ 80 A P-TO220-3-1


    Original     		PDF SPP80N06S2-05 SPB80N06S2-05 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4245 2N0605 P-TO263-3-2 2N0605 2N060 SPB80N06S2-05 SPP80N06S2-05 Q67040-S4255

    2n0609

    Abstract: 2n0609 data sheet SPB80N06S2-09 SPP80N06S2-09
    Text: SPP80N06S2-09 SPB80N06S2-09 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 RDS on 9.1 m ID 80 A P-TO263-3-2 Type Package Ordering Code


    Original     		PDF SPP80N06S2-09 SPB80N06S2-09 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67060-S6025 2N0609 P-TO263-3-2 2n0609 2n0609 data sheet SPB80N06S2-09 SPP80N06S2-09

    2n0608

    Abstract: 6040-H smd marking 58a SPB80N06S2-08 Q67060-S7430 200A 55V ANPS071E SPI80N06S2-08 SPP80N06S2-08 Q67060-S4284
    Text: SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated P- TO262 -3-1 VDS 55 RDS on 8 m ID 80 A P- TO263 -3-2 Type Package Ordering Code


    Original     		PDF SPI80N06S2-08 SPP80N06S2-08 SPB80N06S2-08 SPP80N06S2-08 Q67060-S4283 2N0608 Q67060-S4284 2n0608 6040-H smd marking 58a SPB80N06S2-08 Q67060-S7430 200A 55V ANPS071E SPI80N06S2-08 Q67060-S4284

    2n0609

    Abstract: 2n0609 data sheet smd G47 IPB80N06S2-09 2N060 SP0002-18740 IPP80N06S2-09 ANPS071E PG-TO263-3-2 SP0002-18741
    Text: IPB80N06S2-09 IPP80N06S2-09 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 8.8 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB80N06S2-09 IPP80N06S2-09 PG-TO263-3-2 PG-TO220-3-1 SP0002-18741 2N0609 2n0609 2n0609 data sheet smd G47 IPB80N06S2-09 2N060 SP0002-18740 IPP80N06S2-09 ANPS071E PG-TO263-3-2 SP0002-18741

    2n0609

    Abstract: TC200 Q67060-S6025
    Text: SPP80N06S2-09 SPB80N06S2-09 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 9.1 mΩ ID 80 A • Enhancement mode •=175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated


    Original     		PDF SPP80N06S2-09 SPB80N06S2-09 P-TO220-3-1 P-TO263-3-2 2N0609 2N0609 P-TO220-3-1 Q67060-S6025 TC200

    2n0607

    Abstract: INFINEON PART MARKING to263 2n0607 equivalent ANPS071E SPB80N06S2-07 SPI80N06S2-07 SPP80N06S2-07 2N06
    Text: SPI80N06S2-07 SPP80N06S2-07,SPB80N06S2-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 6.6 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1


    Original     		PDF SPI80N06S2-07 SPP80N06S2-07 SPB80N06S2-07 SPP80N06S2-07 Q67060-S6024 Q67060-S6026 2N0607 Q67060-S6037 2n0607 INFINEON PART MARKING to263 2n0607 equivalent ANPS071E SPB80N06S2-07 SPI80N06S2-07 2N06

    2N0608

    Abstract: ANPS071E SPB80N06S2-08 SPI80N06S2-08 SPP80N06S2-08 smd marking 58a SMD marking code 58A
    Text: SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on ID • 175°C operating temperature • Avalanche rated 55 P- TO262 -3-1 V 8 mΩ 80 P- TO263 -3-2 A P- TO220 -3-1


    Original     		PDF SPI80N06S2-08 SPP80N06S2-08 SPB80N06S2-08 SPP80N06S2-08 Q67060-S4283 Q67060-S4284 2N0608 Q67060-S7430 2N0608 ANPS071E SPB80N06S2-08 SPI80N06S2-08 smd marking 58a SMD marking code 58A

    2n0605

    Abstract: d 132 smd code diode INFINEON PART MARKING Q67040-S4245 2N060 INFINEON PART MARKING to263 TRANSISTOR SMD MARKING CODE ag ANPS071E SPB80N06S2-05 SPP80N06S2-05
    Text: SPP80N06S2-05 SPB80N06S2-05 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode RDS on max. SMD version 4.8 mΩ • 175°C operating temperature ID 80 A • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated


    Original     		PDF SPP80N06S2-05 SPB80N06S2-05 Q67040-S4245 2N0605 Q67040-S4255 BSPP80N06S2-05, BSPB80N06S2-05 2n0605 d 132 smd code diode INFINEON PART MARKING Q67040-S4245 2N060 INFINEON PART MARKING to263 TRANSISTOR SMD MARKING CODE ag ANPS071E SPB80N06S2-05 SPP80N06S2-05

    2n0605

    Abstract: No abstract text available
    Text: SPP80N06S2-05 SPB80N06S2-05 OptiMOS =Power-Transistor Product Summary Feature 55 VDS  N-Channel RDS on  Enhancement mode max. SMD version ID 175°C operating temperature P- TO263 -3-2  Avalanche rated V 4.8 m 80 A P- TO220 -3-1  dv/dt rated Type SPP80N06S2-05


    Original     		PDF SPP80N06S2-05 SPB80N06S2-05 Q67040-S4245 Q67040-S4255 2N0605 BSPP80N06S2-05, BSPB80N06S2-05

    2n0607

    Abstract: SMD MARKING "68A" SPP80N06S2-07 Q67060S60 2N060 Q67060-S6026
    Text: Preliminary data SPI80N06S2-07 SPP80N06S2-07,SPB80N06S2-07 OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V • Enhancement mode R DS on 6.6 mΩ • 175°C operating temperature ID 80 A • Avalanche rated P-TO262-3-1 P-TO263-3-2


    Original     		PDF SPI80N06S2-07 SPP80N06S2-07 SPB80N06S2-07 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPB80N06S2-07 SPI80N06S2-07 P-TO220-3-1 2n0607 SMD MARKING "68A" Q67060S60 2N060 Q67060-S6026

    2N0605

    Abstract: SPI80N06S2-05 SPB80N06S2-05 SPP80N06S2-05 2N060
    Text: Preliminary data OptiMOSâ Power-Transistor SPI80N06S2-05 SPP80N06S2-05,SPB80N06S2-05 Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • 175°C operating temperature ID • Avalanche rated P-TO262-3-1 max. SMD version P-TO263-3-2 55


    Original     		PDF SPI80N06S2-05 SPP80N06S2-05 SPB80N06S2-05 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP80N06S2-05 Q67040-S4245 2N0605 2N0605 SPI80N06S2-05 SPB80N06S2-05 2N060

    2n0605

    Abstract: BSPP80N06S2-05 SPP80N06S2-05 d 132 smd code diode sm smd diode marking
    Text: SPP80N06S2-05 SPB80N06S2-05 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 RDS on max. SMD version 4.8 m ID 80 A P- TO263 -3-2 Type Package Ordering Code


    Original     		PDF SPP80N06S2-05 SPB80N06S2-05 Q67040-S4245 2N0605 Q67040-S4255 BSPP80N06S2-05, BSPB80N06S2-05 2n0605 BSPP80N06S2-05 SPP80N06S2-05 d 132 smd code diode sm smd diode marking

    2n0607

    Abstract: 2n0607 equivalent SPB80N06S2-07 SPP80N06S2-07 Q67060-S6026
    Text: SPP80N06S2-07 SPB80N06S2-07 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 RDS on 6.6 m ID 80 A P-TO263-3-2 Type Package Ordering Code


    Original     		PDF SPP80N06S2-07 SPB80N06S2-07 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67060-S6024 2N0607 P-TO263-3-2 2n0607 2n0607 equivalent SPB80N06S2-07 SPP80N06S2-07 Q67060-S6026

    2n0607

    Abstract: 2n0607 equivalent OPTIMOS TRANSISTOR ANPS071E SPB80N06S2-07 SPI80N06S2-07 SPP80N06S2-07
    Text: SPI80N06S2-07 SPP80N06S2-07,SPB80N06S2-07 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated P- TO262 -3-1 VDS 55 RDS on 6.6 m ID 80 A P- TO263 -3-2 Type Package


    Original     		PDF SPI80N06S2-07 SPP80N06S2-07 SPB80N06S2-07 SPP80N06S2-07 Q67060-S6024 2N0607 Q67060-S6026 2n0607 2n0607 equivalent OPTIMOS TRANSISTOR ANPS071E SPB80N06S2-07 SPI80N06S2-07

    2n0608

    Abstract: Q67040-S4283 smd marking 58a SPB80N06S2-08 SPP80N06S2-08
    Text: SPP80N06S2-08 SPB80N06S2-08 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel 55 R DS on • Enhancement mode ID •=175°C operating temperature • Avalanche rated V 8 mΩ 80 P-TO263-3-2 A P-TO220-3-1 • dv/dt rated


    Original     		PDF SPP80N06S2-08 SPB80N06S2-08 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4283 P-TO263-3-2 Q67040-S4284 2n0608 Q67040-S4283 smd marking 58a SPB80N06S2-08 SPP80N06S2-08