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Microchip Technology Inc 2N5427 TRANS PNP 80V 7A TO66
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Microchip Technology Inc	2N5427			36 Weeks		1 $29.16 10 $29.16 100 $29.16 1000 $29.16 10000 $29.16	Buy Now

Onlinecomponents.com	2N5427					1 - 10 - 100 $25.86 1000 $25.86 10000 $25.86	Buy Now
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Master Electronics	2N5427					1 - 10 - 100 $25.86 1000 $25.86 10000 $25.86	Buy Now
Central Semiconductor Corp 2N5427 Power Transistor NPN 80V 7A 2-Pin TO-66 (Alt: 2N5427)
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Central Semiconductor Corp 2N5427 PBFREE Transistor GP BJT NPN 80V 2-Pin TO-66 Sleeve (Alt: 2N5427 PBFREE)
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Central Semiconductor Corp 2N5427 TIN/LEAD Transistor GP BJT NPN 80V 2-Pin TO-66 Sleeve (Alt: 2N5427 TIN/LEAD)
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Motorola Semiconductor Products 2N5427
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Quest Components	2N5427		2			1 $31 10 $31 100 $31 1000 $31 10000 $31	Buy Now

2N5427 Datasheets (37)

Part	Manufacturer	Description	Datasheet Type	PDF
2N5427	Central Semiconductor	Leaded Power Transistor General Purpose - Pol=NPN / Pkg=TO66 / Vceo=80 / Ic=7 / Hfe=50-120 / fT(Hz)=30M / Pwr(W)=40	Original	PDF
2N5427	Semelab	Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=80 / Ic=7 / Hfe=50-120 / fT(Hz)=30M / Pwr(W)=40	Original	PDF
2N5427	API Electronics	Short form transistor data	Short Form	PDF
2N5427	API Electronics	Short form transistor data	Short Form	PDF
2N5427	API Electronics	TRANSISTOR,BJT,NPN,100V V(BR)CEO,5A I(C),TO-39	Scan	PDF
2N5427	Crimson Semiconductor	EPITAXIAL PLANAR / MULTIEPITAXIAL PLANAR Transistors	Scan	PDF
2N5427	Diode Transistor	TO-3 / Various Transistor Selection Guide	Scan	PDF
2N5427	Diode Transistor	Transistor Short Form Data - TO-3	Scan	PDF
2N5427	General Transistor	NPN Power Transistors	Scan	PDF
2N5427	Mospec	POWER TRANSISTORS(7A,40W) - Pol=NPN / Pkg=TO66 / Vceo=80 / Ic=7 / Hfe=50-120 / fT(Hz)=30M / Pwr(W)=40	Scan	PDF
2N5427	Mospec	Medium-Power NPN Silicon Transistor	Scan	PDF
2N5427	Motorola	The European Selection Data Book 1976	Scan	PDF
2N5427	Motorola	European Master Selection Guide 1986	Scan	PDF
2N5427	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF

2N5427	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N5427	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N5427	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N5427	Unknown	Vintage Transistor Datasheets	Scan	PDF
2N5427	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N5427	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF

2N5427 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N5427 Abstract: No abstract text available Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5427 DESCRIPTION •Contunuous Collector Current-IC= 7A ·Low Collector-Emitter Saturation Voltage: VCE sat = 1.2V(Max) @IC= 7A ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching and wide-band amplifier applications.	Original	PDF	2N5427 10MHz 2N5427
2N3492 Abstract: 2N5388 2N5389 TO61 2N3487 2N3488 2N3489 2N3490 2N3491 2N3879 Text: Device Type 2N3879 2N3487 2N3488 2N3489 2N3490 2N3491 2N3492 2N5387 2N5388 2N5389 2N5427 2N5428 2N5429 2N5430 2N6077 2N6078 2N6079 VCEO V 75 60 80 100 60 80 100 200 250 300 80 80 100 100 275 250 350 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 20/80 4.0	Original	PDF	2N3879 2N3487 2N3488 2N3489 2N3490 2N3491 2N3492 2N5387 2N5388 2N5389 2N3492 2N5388 2N5389 TO61 2N3487 2N3488 2N3489 2N3490 2N3491 2N3879
2N5427 Abstract: No abstract text available Text: 2N5427 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a	Original	PDF	2N5427 O213AA) 1-Aug-02 2N5427
2N5427 Abstract: 2N5429 Text: SavantIC Semiconductor Product Specification 2N5427 2N5429 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For switching and wide-band amplifier applications.	Original	PDF	2N5427 2N5429 2N5427 10MHz 2N5429
Untitled Abstract: No abstract text available Text: 2N5427 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a	Original	PDF	2N5427 O213AA) 30-Jul-02
2N5336 Abstract: 2N5428 2N5429 82mils 2N5337 2N5338 2N5339 2N5427 2N5430 CJD44H11 Text: PROCESS CP219 Central Power Transistor TM Semiconductor Corp. NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 82 x 82 MILS Die Thickness 11 MILS Base Bonding Pad Area 13.2 x 19.7 MILS Emitter Bonding Pad Area 13.2 x 21.2 MILS	Original	PDF	CP219 2N5336 2N5337 2N5338 2N5339 2N5427 2N5428 2N5429 2N5430 D44H11 2N5336 2N5428 2N5429 82mils 2N5337 2N5338 2N5339 2N5427 2N5430 CJD44H11
2SD568L Abstract: idb674 2N547 2SD569L nec npn rf 2SD8430 2SD568K Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) PD Max hFE *T ON) Min (Hz) Max k)N Max (A) (s) ICBO r (CE)Mt Max (Ohms) Toper Max Package Style CO D vices 20 Watts or More, (Cont'd) 5 10 2SA1185 2SB827 2SD1063 2SB754	Original	PDF	2SA1185 2SB827 2SD1063 2SB754 2SD844 ET1551 2SB1224 2SD1626 2SA1442 2SC3692 2SD568L idb674 2N547 2SD569L nec npn rf 2SD8430 2SD568K
2N3738 equivalent Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420 Text: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912	Original	PDF	2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420 2N6421 2N3738 equivalent 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420
Untitled Abstract: No abstract text available Text: I SPACE POWER ELECTRONICS ST DE~\| A4403SS ••00106 1 \| ^ * 3 3 - 0 / _ Hi-Rel PLANAR P O K E R - 1 0 AMP NPN FOR DETAILED SPECIFICATIONS CONTACT ENGINEERING Breakdown Voltages TYPE CASE V 2N4897 2N5002 2N5004 2N5006 2N5008 2N5048 2N5049 2N5148 2N5150 2N5152	Original	PDF	A4403SS 2N4897 2N5002 2N5004 2N5006 2N5008 2N5048 2N5049 2N5148 2N5150
Untitled Abstract: No abstract text available Text: EPITA XIA L PLANAR - TO-66 PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 21-14912 2N5427 2N5428 2N5429 2NI5430 BUX78 2N4898 2N4899 2N4900 lc Vco V V cio (V) (A) P« (W) 100 300 200 100 40 60 80 80 80 100 100 80 200 120 80 40 60 80 80 80 100 100 5 20 10 5 4 4	OCR Scan	PDF	BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N5427 2N5428 2N5429 2NI5430
2N4071 Abstract: 2N6277 JANTXV 2N5626 Text: BIPOLAR < O P EA K PACKAGE TO-213 10- 66 T0-204 (TO-3) DEVICE TYPE 2N4864 2N5598 2N5600 2N5602 2N5604 2N5606 2N5608 2N5610 2N5612 2N5661T 2N566J’ 2N5664' 2H5665*’ 2N5427 2N5428 2N5429 2N5430 bvceo •c VOLTS 120 60 80 80 100 60 80 80 100 200 300	OCR Scan	PDF	2N4864 2N5598 2N5600 2N5602 2N5604 2N5606 2N5608 2N5610 2N5612 2N5661T 2N4071 2N6277 JANTXV 2N5626
2N5430 Abstract: 2N5427 2N5428 2N5429 transistor b 1560 Text: MOS PEC MEDIUM-POWER NPN SILICON TRANSISITORS NPN 2N5427 Thru 2N5430 . designed for switching and wide-band amplifier applications FEATURES * DC Current Gain Specified to 7 Amperes. * Low Collector-Emitter Saturation Voltagev CE satf1-2V (M ax @ lc=7.0A	OCR Scan	PDF	2N5427 N5430 N5427 2N5428 2N5429 2N5430 Curre5427 2N5427 transistor b 1560
23581 i c Abstract: ax 23581 ax 23581 i c Text: Microsemi NPN Transistors Part Number NPN 2N5051 2N5052 TIP31 TIP31A TIP31B TIP31C 2N5074 2N5075 2N5076 2N5077 2N6121 2N6122 2N6465 2N6466 2N6474 2N6374 2N6373 2N6372 2N6288 2N6290 2N6292 2N5427 2N5428 2N5429 2N5430 2N6078 2N6077 2N6079 2N5730 TIP110 TIP111	OCR Scan	PDF	T0-220 O-220 23581 i c ax 23581 ax 23581 i c
2N4116 Abstract: 2N5304 2N2658 2N2849 2N2850 2N2851 2N2852 2N2880 2N4305 2N4309 Text: 8 1 3 4 6 9 3 S E M I CO A 40 j Ë~\| 6 1 3 ^ 3 OOOOlBb 3 ^~T‘<J>7 - Q \ NPN SILICON POWER TRANSISTORS C ont’d) Electrical Characteristics @ 25°C Maximum Ratings Device Dissipation Type No. @25°C NPN (Case) Watts 30 2N2880 5 2N2852 5 2N2851 5 2N2850	OCR Scan	PDF	fll34fc, 2N2880 2N2852 2N2851 2N2850 -2N2658 2N2849 2N4309 2N4305 2N5336 2N4116 2N5304 2N2658

TRIAC 97A6 Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1	OCR Scan	PDF	OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
1N5438 Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175 Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi	OCR Scan	PDF	27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	PDF	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
2N3583 Abstract: 2N4296 2N4297 2N4298 2N4299 2N5427 2N5428 2N5429 2N5430 Text: 1 1 0 J)L T R A N S I S T O R - CO • w - r w j ^ U I O D E ^ I H IN C A N S I A 4D S T O R C O D \| 5646352 0D D D 13E 2 I M G - . . 8 4 P 1 3 2 D T > 3 2 » 0 5 ~ D1QDE TR^f\l515TQR CGJfUC. 201) 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4561	OCR Scan	PDF	INC77 0GDG132 2N5427 2N5428 2N5429 30-12atts 2N5838 2N5839 2N5840 2N3902 2N3583 2N4296 2N4297 2N4298 2N4299 2N5427 2N5428 2N5429 2N5430
4116 2n Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442 Text: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE	OCR Scan	PDF	2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2NI718 2N1719 4116 2n j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
2N5478 Abstract: No abstract text available Text: SEMELAB LTD • ai33ia? . .-' _ ISMLB 0000DE1 T~ 3 3 -¿ / ^ Reliability Polarity Option Package O ■type No. < o m '“«¿Sslssiia, *c cont hFE@ VCE/'C «T Pd \| r 2N5190 2N5191 2N5192 2N5193 2N5194 NPN NPN NPN PNP PNP 40 60 80 40 60 4 4 4 4 4 25-100 25-100	OCR Scan	PDF	ai33ia? 0000DE1 10/1m 10/50m 40min 2N5478
2NS604 Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302 Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75	OCR Scan	PDF	2N2387 2N2988 2N2S89 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2NS604 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
2N5286 Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562 Text: SOLITRON DEVICES INC ^ D eT\| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT	OCR Scan	PDF	2N2657 2N2658 2N2877 O-111 2N2878 2N2879 2N2880 2N5286 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
1040B Abstract: 2N3910 svt6062 2n5100 Text: =1 TYPE 1015 NPN 1 GEOMETRY PHYSICAL CHARACTERISTICS 1. 2. 3. 4. Chip size. Chip hickness. Top metal. Back metal. 5. Backside. 6. Bonding pad. 2020 PNP 1. 2. 3. 4. Chip size. Chip thickness. Top metal.	OCR Scan	PDF	1020B 15X19 3kA/10kA/I0kA 3kA/10kA/10kA 2N6674 2N6675 2N6676 2N6677 1040B 2N3910 svt6062 2n5100
5N520 Abstract: No abstract text available Text: General Transistor Corporation CASE le MAX V c e o (s u s ) = NPN Power Transistors VCE(SAT) IC/1B (V®A/A) VBE IC/VCE (V®A/V) 25-100 @ .5/4 40-200 @.5/10 25-100 @1/10 25-100 @1/10 1 @ 5/.05 5 @ 1/.125 .75 @ 1/.125 .75 @ 1/.125 1.7 @.5/4 1.4@ 1/10 .25	OCR Scan	PDF	2N6317 2N6318 2N6372 2N6373 2N6374 2N5955 2N5954 5N520

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2N5427 Search Results

2N5427 Price and Stock

Microchip Technology Inc 2N5427

Central Semiconductor Corp 2N5427

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Motorola Semiconductor Products 2N5427

2N5427 Datasheets (37)

2N5427 Datasheets Context Search

2N5427

2N3492

2N5427

2N5427

Untitled

2N5336

2SD568L

2N3738 equivalent

Untitled

Untitled

2N4071

2N5430

23581 i c

2N4116

TRIAC 97A6

1N5438

la 4440 amplifier circuit diagram 300 watt

2N3583

4116 2n

2N5478

2NS604

2N5286

1040B

5N520