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    Motorola Semiconductor Products 2N5778

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    2N5778 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5778 General Electric Semiconductor Data Handbook 1977 Scan PDF
    2N5778 Motorola The European Selection Data Book 1976 Scan PDF
    2N5778 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5778 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5778 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N5778 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    c 337 25

    Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
    Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3


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    photo transistor L14F

    Abstract: photo transistor 2n5777 2N5779 L1402 L14F 2N5780 L14A502 L14f photo transistor L14B1 photo transistor L14e2
    Text: OPTO ELECTRONICS DETECTORS— PHOTOTRANSISTORS Photo Current @ H = Tungsten 2mW/cm2 @ 2870° K II Min. mA JEDEC No. GE Type: Rise 8, Fall Times Typical Photo Current GaAs Source II Mat. (mA) II Min. (mA) II Max. (mA) V e to tf U se e) Min. Package Outline


    OCR Scan     		PDF L14B1 L14B2 L14B3 L14B4 L14D1 2N5777 L14D2 2N5778 L14D3 2N5779 photo transistor L14F photo transistor 2n5777 L1402 L14F 2N5780 L14A502 L14f photo transistor photo transistor L14e2

    L14F1 PHOTOTRANSISTOR

    Abstract: 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAG E NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M E T E R S TYP. n. SEC. TY P. n. SEC . mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14F1 PHOTOTRANSISTOR 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2N5777

    Abstract: L14G2 application note 2N5778 2N5779 2N5780 l14h4 L9B sot photo transistor 2n5777 H11A2 H11A3
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 2N5777 L14G2 application note 2N5778 2N5779 2N5780 l14h4 L9B sot photo transistor 2n5777 H11A2 H11A3

    PHOTO DIODE LED55C

    Abstract: ssl55c LED55B photo transistor L14F1 ssl55b SSL55CF LED56F LED56 LED55C Direct replacement for ssl55c
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 PHOTO DIODE LED55C ssl55c photo transistor L14F1 ssl55b SSL55CF Direct replacement for ssl55c

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    2N5779

    Abstract: L14H4 photo transistor 2n5777 L14f1 photo transistor 2N5777 H15A1 photo transistor L14F1 2N5780 opto 4n25 4n35 1327
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE FA LL R IS E M AX. M IN . M A X . P E A K E M IS S IO N W A V ELEN G TH T IM E T IM E Vp @ Pd PO@ NO. lp = 1 0 0 m A lp = 1 0 0 m A T Y P . n. M E T E R S T Y P . n. S E C . T Y P . n. S E C . mW PAGE M A X . Ip CO NT.


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 2N5779 L14H4 photo transistor 2n5777 L14f1 photo transistor 2N5777 H15A1 photo transistor L14F1 2N5780 opto 4n25 4n35 1327

    photo transistor 2n5777

    Abstract: L14F1 npn photo transistor 2N5777 h11 bulb 2n5777 l14f1 2N5778 2 leads photo transistor 2n5777 photo transistor 2n5778 2N5777-80 photo transistor L14F1
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F FALL RISE M AX. M IN . M A X . PEAK EM ISSION W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M ETER S TYP. n. SEC. T Y P . n. SEC. mW 5.4mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 photo transistor 2n5777 L14F1 npn photo transistor 2N5777 h11 bulb 2n5777 l14f1 2N5778 2 leads photo transistor 2n5777 photo transistor 2n5778 2N5777-80 photo transistor L14F1

    2N5777

    Abstract: 2N5777-80 2N5778 2N 5777 L14D1 ft 5777 L14D2 2N577 I461 L14D2 and 2n5777
    Text: Light Detector r— Planar Silicon Photo-Darlington Amplifier 2N5777-80 i This General Electric Light Sensor Series is an NPN planar silicon photo-darlington amplifier. For many applications, only the collector and emitter leads are used. A base lead is provided to control


    OCR Scan     		PDF 2N5777-80 2N5777, L14D1 2N5778. L14D2 2N5777 2N5777-80 2N5778 2N 5777 ft 5777 2N577 I461 L14D2 and 2n5777

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    opto isolator 4n35

    Abstract: GE 4N35 l14f1 ir phototransistor L14F1 npn photo transistor 537 opto isolator L14F1 phototransistor 4N35-37 l14h4 LED55B L14G1 phototransistor
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ NO. lp = 1 0 0 m A l p = 1 0 0 m A T Y P . n. M E T E R S T Y P . n. S E C . T Y P . n. S E C . m W PAGE M A X . Ip CONT.


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 opto isolator 4n35 GE 4N35 l14f1 ir phototransistor L14F1 npn photo transistor 537 opto isolator L14F1 phototransistor 4N35-37 l14h4 L14G1 phototransistor

    ssl55c

    Abstract: photo transistor 2n5777 2N5779 PHOTO DIODE LED55C LED56F L14F1 LED56 LED55C H74A1 LED55B
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 ssl55c photo transistor 2n5777 2N5779 PHOTO DIODE LED55C L14F1 H74A1

    H15A1

    Abstract: H15A1 opto L14F1 npn photo transistor h15a2 L14F1 phototransistor ge H15A1 photo transistor L14F1 opto h15a2 LED56 L14F2
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 H15A1 H15A1 opto L14F1 npn photo transistor h15a2 L14F1 phototransistor ge H15A1 photo transistor L14F1 opto h15a2 L14F2

    wiring diagram audio amplifier ic 6283

    Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
    Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor


    OCR Scan     		PDF 4L3052 4L3056 wiring diagram audio amplifier ic 6283 germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838

    UAA2001

    Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
    Text: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­


    OCR Scan     		PDF 0HF40 0HF60 0HF80 6FP10 6F100 70HF10 UAA2001 MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402

    SN72710L

    Abstract: MC1013P MC680P 796HC mc1235l MC838P MC814G MC1670L 723HC 741hm
    Text: 27-18 LH 0002 C LH 0002 CN 586-81! .587-270 AMPEX CURRENT A M PLIFIE R IN PUT 27-18 AMPEX REV 111 NH 0005C 586-495 D AC08CZ 587-896 27 + R ef | 1_ O PE R ATIO N AL A M PLIFIE R 8 BIT D -A CONVERTER 2" 14 13 12 11 6 5 4 1I i i i i i 3 1 13 , +12V So-4


    OCR Scan     		PDF LH0002C LH0002CN NH0005C DAC08CZ NH0014C DH0034 78M12HC MMH0026CG 79M12AHC 75460BP SN72710L MC1013P MC680P 796HC mc1235l MC838P MC814G MC1670L 723HC 741hm

    in5388

    Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
    Text: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor


    OCR Scan     		PDF plu300 in5388 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic

    2N5777 equivalent

    Abstract: transistor l14g2 L14G3 L14G1-L14G2-L14G3 l14g1 equivalent L14G2 general electric h11 bulb L14G3 equivalent L14G2 color sensitive PHOTO TRANSISTOR
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL RISE MAX. MIN. MAX. PEAK EMISSION W AVELENGTH TIME TIME Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 2N5777 equivalent transistor l14g2 L14G3 L14G1-L14G2-L14G3 l14g1 equivalent L14G2 general electric h11 bulb L14G3 equivalent color sensitive PHOTO TRANSISTOR

    L14F1 npn photo transistor

    Abstract: 4n26 opto isolator 4n27 opto isolator L14F1 phototransistor 4N25-4N26-4N27 4N25-4N26-4N27-4N28 2N5777 2N5780 transistor 531 ge 4n25
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14F1 npn photo transistor 4n26 opto isolator 4n27 opto isolator L14F1 phototransistor 4N25-4N26-4N27 4N25-4N26-4N27-4N28 2N5777 2N5780 transistor 531 ge 4n25

    L14H2

    Abstract: L14H1 L14F1 npn photo transistor l14h4 AA 4N35 h11 bulb 2N5777 L14F2 photo transistor L14F1 H11A3
    Text: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FA LL RISE MAX. MIN. MAX. PEA K EMISSION W AVELEN G TH TIME TIME Vp @ Pd PO@ lp=100mA lp= 100mA TYP. n. M ETER S TYP. n. SEC. T YP . n. SEC . mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14H2 L14H1 L14F1 npn photo transistor l14h4 AA 4N35 h11 bulb 2N5777 L14F2 photo transistor L14F1 H11A3

    L14F1 npn photo transistor

    Abstract: transistor l14f1 2N5777 equivalent ge L14F1 L14f1 photo transistor photo transistor L14F1 L14F1 L14F1-L14F2 of transistor L14F1 circuit using l14f1
    Text: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL RISE MAX. MIN. MAX. PEAK EMISSION W AVELENGTH TIME TIME Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC. mW


    OCR Scan     		PDF 100mA LED55C LED55B LED56 LED55CF LED55BF LED56F l14g1 l14g2 L14F1 npn photo transistor transistor l14f1 2N5777 equivalent ge L14F1 L14f1 photo transistor photo transistor L14F1 L14F1 L14F1-L14F2 of transistor L14F1 circuit using l14f1