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    2N6063 Search Results

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    2N6063 Price and Stock

    Microchip Technology Inc 2N6063

    POWER BJT
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    Avnet Americas 2N6063 Bulk 36 Weeks 100
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    Mouser Electronics 2N6063
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    Newark 2N6063 Bulk 100
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    Future Electronics 2N6063 100
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    Microchip Technology Inc 2N6063 36 Weeks
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    Onlinecomponents.com 2N6063
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    NAC 2N6063 1
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    Master Electronics 2N6063
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    Silicon Transistor Corporation 2N6063

    POWER BIPOLAR TRANSISTOR, 50A I(C), 100V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-63, METAL, 3 PIN
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    Quest Components 2N6063 1
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    2N6063 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6063 API Electronics Short form transistor data Short Form PDF
    2N6063 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6063 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6063 Unknown Transistor Replacements Scan PDF
    2N6063 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6063 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N6063 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6063 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6063 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6063 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6063 Pirgo Electronics Low Frequency Silicon Power Transistor Scan PDF
    2N6063 PPC Products Transistor Short Form Data Scan PDF
    2N6063 PPC Products Transistor Selection Guide Scan PDF
    2N6063 PPC Products Transistor Selection Guide including JAN / JANTX / JANTXV Scan PDF

    2N6063 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LT082

    Abstract: LT081 LT089 LT081S SML55405 transistors 1U BUR20 TC15U800
    Text: POWER SILICON TRANSISTORS Item Number •c Part Number Manufacturer Type Max hFE fT ICBO Max t0N Max on ON Min Hz) (A) (s) 300 325 350 400 400 400 400 425 425 450 700 625 230 300 625 885 1 7k 350 530 350 V(BR)CEO Max (A) PD r <CE)Mt Max (Ohms) Toper Max


    Original
    PDF SDT55960 SML55462 PTC6683 2SD642 SML55464 D60T4040 D62T4040 SDT5825 SDT5855 SDT5826 LT082 LT081 LT089 LT081S SML55405 transistors 1U BUR20 TC15U800

    TIP360

    Abstract: b0751 pn5931 PN5932 b0746 sm2160 2SC2936 HITACHI ST29045 PN5929 st2904
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 A, BLX84 2SB1079 B07460 B07460 RCA91160 B0750A B0750A B0751A B0751A B0750C ~g;~~g 15 20 B0751C MJ15004 RCA9116C 2SC2820 SSP72 TIP36 B0250 SSP72A ~~~~~A 25 30 2N5883 SSP72B B0250B TIP36B 2N5884 2N6436


    Original
    PDF 2N5683 2N5684 2N6377 2N6380 2N6061 2N6063 2N6378 2N6381 2N6379 2N6382 TIP360 b0751 pn5931 PN5932 b0746 sm2160 2SC2936 HITACHI ST29045 PN5929 st2904

    SPHV402

    Abstract: TO36 TO114
    Text: 8440355 SPACE SPACE POWER POWER E L E C T R O N I C S 89C ELECTRONICS "flT 00115 D T-3 3-0/ DE~|fl44Q3SS •••••US t Ni-Rel PLANAR POWER 60 AMP P B A S E T O E M I T T E R S A T U R A T I O N V O L T A G E 3.5 S w 2 . 0 UI CD > 1 . 5 ." 1 TA-" - 5 5


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    PDF fl44Q3SS 166WOT O-114 SPHV405 SPHV406 SPHV407 SPHV408 SPHV409 SPHV420 SPHV421 SPHV402 TO36 TO114

    2n60n

    Abstract: 2N6235 2N6078 2N5968 2N5970 2N6032 2N6033 2N6046 2N6215 2N6060
    Text: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRIEAKDOV VN SAT . VO LTA GES M ax. h F: E V OLTAGE S NPN 'c 'c CASE VCB V CE V EB V CE (V) (A) M in. Max. (A) !b (A) V CE (V) V BE (V) 2N5968 TO-63/I 100 100 10 10 10 30 120 10 1.5 1.2 2 2N5970 TO-3 80 80


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    PDF 2N5968 O-63/I 2N5970 2N6032 2N6033 2N6046 2N6047 2N6060 2N6062 2n60n 2N6235 2N6078 2N6215

    UJT-2N2646 PIN DIAGRAM DETAILS

    Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
    Text: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect


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    PDF Semi260 TY510 TY6004 TY6008 TY6010 TY8008 TY8010 2N6394 MCR218-8 UJT-2N2646 PIN DIAGRAM DETAILS speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


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    PDF PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    AP1069

    Abstract: AP1112 2N5489 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275
    Text: A P I ELECTRONICS 0043592 A P I INC _ 2b ELECTRONICS DE 1 0 0 4 3 5 ^ 5 ZbC INC D O D O S B 11] S |~ D ~ fZ 3 3 ~ £ 00239 C O L L E C T O R C U R R E N T = 5 0 A M PS N PN T Y PE S D ev ice No C a se VCBO V olts VCEO (sus) V olts 2N5685 2N5686 2N5926 2N6032


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    PDF 004BSTS 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 AP1069 AP1112 2N5489

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    9300

    Abstract: 2N5561 2N5330 2N3729 2N4025 2n6561 9301
    Text: SEMICOA IflE D BVce0 Range lc Max. BVeb0 Range • ûlBMbia OGOG1SE M ■ Low Current HFE Mid-Range HFE High Current HFE To V @lc mA Min. @ lc mA Min. 4 6 0.1 30 10 40 300 40 4 6 0.1 20 2 20 140 20 40 3 6 .01 15 2 30 250 20 20 2 4,3 20 60 3 7 .10 20 2 30


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    PDF 2N5004 2N5005 2N5008 2N5009 2N5038 2N5039 2N5077 2N5085 2N5149 2N5150 9300 2N5561 2N5330 2N3729 2N4025 2n6561 9301

    2n60n

    Abstract: 2N6063 2N6232 2N6274 2N5968 2N5970 2N6032 2N6033 2N6046 2N6047
    Text: Tl LU /N S IT > BRE V n NPN D E V IC E < • PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST S A T V O L T A G E S ( M i iX . E VCE , ÍY J _ 1.2 V BE (V) 'c (A) 10 30 120 10 (A j_ 1.5 4 1.5 20 100 1.5 1.25 2 3 7 2 50 10 50 50 5 1.3 2 120 8 2 40 10 50


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    PDF 2N5968 O-63/I 2N5970 2N6032 2N6033 2N6046 2N6047 2N6048 2N6060 2N6062 2n60n 2N6063 2N6232 2N6274

    2N3729

    Abstract: 2N3551 2N6925A 2N6583 2N6923 2n6924
    Text: AVAILABLE GEOMETRIES — SORTED BY Ic MAX lcMAX BV ceo Ran§e BV ebo Ran8e Low Current HfE From V To (V) From (V) To (V) @ lc mA Mid-Range HfE High Current HtE Typ VCE(sat) Typ Typ Cib @ 0.5V Cob @ 10V ^S/b A Geom. Pol. Use Code 0.03 0014 PNP 2 10 25 4 6


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    PDF 2N6340 2N6341 2N6350 2N6351 2N6352 2N6353 2N6378 2N6379 2N6381 2N6382 2N3729 2N3551 2N6925A 2N6583 2N6923 2n6924

    2N5685

    Abstract: 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 2N6278
    Text: A P I ELECTRONICS 0043592 A P I INC _ 2b ELECTRONICS DE 1 0 0 4 3 5 ^ 5 INC D O D O S B 11] S ZbC 0 0 2 3 9 |~ D ~fZ33~£ C O L L E C T O R C U R R E N T = 5 0 A M PS N PN T Y PE S D ev ice No C a se VCBO V olts VCEO (sus) V olts 2N5685 2N5686 2N5926 2N6032


    OCR Scan
    PDF 004BSTS 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 2N6278

    AP1069

    Abstract: 2N6274 AP1112 to63 2N5685 2N5686 2N5926 2N6032 2N6215 2N6275
    Text: A P I ELECTRONICS INC 0043592 A P I _ 2^ ELECTRONICS DE 1 00435^5 DOODEaì S | ~ INC ZbC 00239 ~fZ33~£ COLLECTOR CURRENT = 5 0 AMPS NPN TYPES Device No C ase VCBO Volts VCEO (sus) Volts 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 2N6278


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    PDF 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 2N5968 AP1069 AP1112 to63