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    2N6649 Price and Stock

    Microchip Technology Inc 2N6649

    PNP TRANSISTOR
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    Microchip Technology Inc JAN2N6649

    TRANS PNP DARL 60V 10A TO204AA
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    Microchip Technology Inc JANTX2N6649

    TRANS PNP DARL 60V 10A TO204AA
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    Microchip Technology Inc JANTXV2N6649

    TRANS PNP DARL 60V 10A TO204AA
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    VPT Components JAN2N6649

    Silicon Power Darlington Transistor PNP 60V 10A 2-Pin TO-204AA Through Hole - Bulk (Alt: JAN2N6649)
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    2N6649 Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6649 Microsemi PNP Darlington Power Silicon Transistor Original PDF
    2N6649 Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package Original PDF
    2N6649 Central Semiconductor POWER DARLINGTON TRANSISTORS (METAL) Scan PDF
    2N6649 Central Semiconductor BJT, PNP, Power Transistor, IC 10A Scan PDF
    2N6649 General Electric 10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. Scan PDF
    2N6649 Mospec POWER TRANSISTORS(10A,100W) Scan PDF
    2N6649 Motorola Power Transistor Selection Guide Scan PDF
    2N6649 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6649 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6649 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6649 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6649 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6649 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6649 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6649 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6649 Unknown Transistor Replacements Scan PDF
    2N6649 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6649 Unknown Transistor Replacements Scan PDF
    2N6649 Unknown Transistor Replacements Scan PDF
    2N6649 Unknown Transistor Replacements Scan PDF

    2N6649 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6449

    Abstract: 2N6648 2N6649 2N6650
    Text: TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/527 Devices Qualified Level 2N6648 2N6649 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation


    Original
    PDF MIL-PRF-19500/527 2N6648 2N6649 2N6650 2N6648 2N6649 2N6650 2N6449 2N6449

    2N6649

    Abstract: No abstract text available
    Text: 2N6649 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6649 O204AA) 31-Jul-02 2N6649

    Untitled

    Abstract: No abstract text available
    Text: 2N6649 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6649 O204AA) 16-Jul-02

    2N6449

    Abstract: 2N6649 2N6650 2N6648
    Text: TECHNICAL DATA 2N6648 JANTX, JTXV 2N6649 JANTX, JTXV 2N6650 JANTX, JTXV Processed per MIL-PRF-19500/527 PNP DARLINGTON POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current


    Original
    PDF 2N6648 2N6649 2N6650 MIL-PRF-19500/527 2N6648 2N6649 2N6650 2N6449 2N6449

    Untitled

    Abstract: No abstract text available
    Text: 2N6649 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6649 O204AA) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: Back to Bipolar Darlington Transistors TECHNICAL DATA 2N6648 JANTX, JTXV 2N6649 JANTX, JTXV 2N6650 JANTX, JTXV Processed per MIL-PRF-19500/527 PNP DARLINGTON POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage


    Original
    PDF 2N6648 2N6649 2N6650 MIL-PRF-19500/527 2N6648 2N6649 2N6650 O-204AA) 2N6449

    1N6762

    Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
    Text: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index


    Original
    PDF MIL-PRF-19500 2N720A 2N1131 2N1132 2N1893 JANHC2N2222A JANKC2N2222A JANH3057A 2N3250A 2N3251A 1N6762 JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original
    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    2N7058

    Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
    Text: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20


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    PDF VNL005A O-204AA/TO-3 VNM006A VNM005A 2N1717 2N1890 O-205AD/TO-39 2N7058 ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066

    pmd10K80

    Abstract: PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88
    Text: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789


    Original
    PDF 2N3055 MJ2955 2N3442 2N3713 2N3789 2N3714 2N3790 2N3715 2N3791 2N3716 pmd10K80 PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88

    2N6648

    Abstract: No abstract text available
    Text: File N u m b e r 1013 2N6648, 2N6649, 2N6650 10-Ampere P-N-P Darlington Power Transistors 40-60-80 Volts, 70 Watts Gain of 1000 at 5 A T E R M IN A L D E S IG N A T IO N S c FLAN GE Features: • Operates from 1C without predriver A p p lication s: ■ Power switching ■ Audio amplifiers


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    PDF 2N6648, 2N6649, 2N6650 10-Ampere O-204AA 2N6649 2N6383, 2N6384, 2N6648

    BUW67

    Abstract: BDX85C bdx86c 2N6383 2N6384 2N6385 2N6648 2N6649 2N6650 BDX85
    Text: 1989963 CEN TRA L SEMICONDUCTOR T i ' deT| ‘ 61C - 0 0 1 9 7 ^ oD oon? i T -33-29 ~ jp POWER DARLINGTON TRANSISTORS METAL IC 10A = TYPE lc hFE@ lc VCE(S) @lc fT Min Mhz Volts Watts Min - Max Amps Volts Amps 10 40 100 1,000-20,000 5.0 2.0 5.0 - 2N6649 10


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    PDF T-33-29 TEMPERATURE-55Â 2N6383 2N6648 2N6384 2N6649 2N6385 2N6650 BDX85 BDX86 BUW67 BDX85C bdx86c

    2N6649

    Abstract: 2N6650 TA8351 TA8488 2N6383 2N6384 2N6385 2N6648 TA8350
    Text: Gl 3875081 G E SO LID STATE 01E D eT | 3 ö 7S0 ö 1 □□172b4 17264 D Darlington Power Transistore_ 2N6648. 2N6649, 2N6650 File Number 10-Ampere P-N-P Darlington Power Transistors 40-60-80 Volts, 70 Watts Gain of 1000 at 5 A TERM INAL D E SIG N A TIO N S


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    PDF 0G172b4 2N6648. 2N6649, 2N6650 10-Ampere O-204AA 2N6648, 2N6649 2N6650* 2N6383, 2N6650 TA8351 TA8488 2N6383 2N6384 2N6385 2N6648 TA8350

    ta8350

    Abstract: TA8351 TA8488
    Text: File N um ber 1013 HARRIS SEMICOND SECTOR 2N6648, 2N6649, 2N6650 SbE » • 4302S71 OCmObOD 4Tb « H A S 10-Ampere P-N-P Darlington -p .^ 3 ^ 3 1 Power Transistors 40-60-80 Volts, 70 Watts Gain of 1000 at 5 A TERMINAL DESIGNATIONS Features: ■ Operates from 1C without predriver


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    PDF 2N6648, 2N6649, 2N6650 4302S71 10-Ampere 2N6649 2N6650* 2N6383, 2N6384, ta8350 TA8351 TA8488

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors TO-3 Case Continued TYPE NO. •c (A) NPN PNP Pd (W) bvceo (V) (V) hFE 8 lc »TYP (A) VCE(SAT) @ic (V) (A) MAX h *TYP (MHZ) MIN MIN MIN MAX 10 125 110 100 20 100 5.0 3.5 10 4.0 2N6249 10 175 300 200 10 50 10 1.5 10 2.5 2N6250 10 175 375


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    PDF 2N6249 2N6250 2N6251 2N6253 2N6254 2N6248 2N6282 2N6285 2N6547 2N6576

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-3 le MAX = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP Type No. complement MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 DARLINGTON yes yes yes yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) (A)


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    PDF 5-500V MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 MJ10012 MJ13015

    2N6650

    Abstract: 2N6385 2N6649 shockley diode 2N6383 2N6384 2N6648
    Text: Æà MOS PEC COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS .designed for low and medium frequency power application such as power switching,audio amplifier,hammer drivers,and shunt and series regulators. FEA TU RES: * High Gain Darlington Performance


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    PDF 2N6383 2N6648 2N6384 N6649 2N6385 2N6650 2N6648 2N6649 2N6650 shockley diode

    lts 542

    Abstract: LTS 543 2n6800 LTS 542 INTERNAL DIAGRAM 2N6756 2N6790 LH0063 QPL-19500 TRANSISTOR C 557 B
    Text: Standard Power MOSFETs 2N6790 File N u m be r 1900 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 3.5 A, 200V N-CHANNEL ENHANCEMENT MODE TDSIonl = 0 . 8 0 Features: • a ■ ■ m SOA is power-dissipation limited Nanosecond switching speeds


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    PDF 2N6790 92cs-3374i 2N6790 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF lts 542 LTS 543 LTS 542 INTERNAL DIAGRAM 2N6756 LH0063 QPL-19500 TRANSISTOR C 557 B

    QPL-19500

    Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
    Text: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits


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    PDF 2N6903 2N6903 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ QPL-19500 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760

    2n5764

    Abstract: 2N6764 JANTXV 2N6764 JANTX 2N6764 2N6164 2N6901 2N6763 25C31
    Text: Standard Power MOSFETs, File Number 2N6763, 2N6764 1590 N-Channel Enhancement-Mode Power MOS Field-Ef fect Transistors 31A and 38A, 60V-100V rDs on = 0.08 O and 0.055 Q N-CHANNEL ENHANCEMENT MODE Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


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    PDF 2N6763, 2N6764 0V-100V 2N6763 2N6764 2N6796 O-2I35AF 2n5764 2N6764 JANTXV 2N6764 JANTX 2N6164 2N6901 25C31

    2N6898 JANTX

    Abstract: 2N6898 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500
    Text: Standard Power MOSFETs File Number 2N6898 1876 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power MOS Field-Effect Transistors 25 A, -1 0 0 V rDs on : 0.20 Cl TERMINAL DIAGRAM Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds


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    PDF 2N6898 2N6898 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6898 JANTX 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500

    2N6794

    Abstract: 2N6794 JANTX fllnm 80 3v 4 channal relay fllnm qpl-19500 LH0063 TRANSISTOR C 557 B 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6796 IR
    Text: Standard Power MOSFETs 2N6794 File Number 1902 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 1.5A, 500V rD S on = 3 0 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation lim ited m Nanosecond switching speeds


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    PDF 2N6794 2N6794 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6794 JANTX fllnm 80 3v 4 channal relay fllnm qpl-19500 LH0063 TRANSISTOR C 557 B 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6796 IR

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    2N6248

    Abstract: 2N6249 2N6250 2N6251 2N6253 2N6254 2N6282 2N6283 2N6284 2N6285
    Text: Power Transistors TO-3 Case Continued TYPIE NO. •c (A) NPN PNP Pd (W) MAX bvcbo bvceo @ hFE lC *TYP (V) (V) MIN MIN MIN MAX (A) V CE(SAT) @ ic (V) (A) MAX fT *TYP (MHZ) MIN 10 125 110 100 20 100 5.0 3.5 10 4.0 10 175 300 200 10 50 10 1.5 10 2.5 2N6250


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    PDF 2N6248 2N6249 2N6250 2N6251 2N6253 2N6254 2N6282 2N6285 2N6283 2N6286 2N6249 2N6250 2N6251 2N6253 2N6254 2N6284