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    2N7002K_R1 Search Results

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    2N7002K_R1 Price and Stock

    PanJit Group 2N7002K_R1_00001

    SOT-23, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2N7002K_R1_00001 Cut Tape 23,082 1
    • 1 $0.18
    • 10 $0.11
    • 100 $0.18
    • 1000 $0.04322
    • 10000 $0.04322
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    2N7002K_R1_00001 Digi-Reel 23,082 1
    • 1 $0.18
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    2N7002K_R1_00001 Reel 18,000 3,000
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    Chip1Stop 2N7002K_R1_00001 Cut Tape 1,645
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    • 1000 $0.0183
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    Ozdisan Elektronik 2N7002K_R1_00001 95,755
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    PanJit Semiconductor 2N7002K_R1_00001

    MOSFETs 60V N-Channel Enhancement Mode MOSFET - ESD Protected
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    Mouser Electronics 2N7002K_R1_00001 241,053
    • 1 $0.12
    • 10 $0.081
    • 100 $0.042
    • 1000 $0.037
    • 10000 $0.019
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    Verical 2N7002K_R1_00001 9,000 3,000
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    Bristol Electronics 2N7002K_R1_00001 633,000
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    TME 2N7002K_R1_00001 10,600 1
    • 1 $0.1099
    • 10 $0.072
    • 100 $0.0385
    • 1000 $0.0329
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    NAC 2N7002K_R1_00001 9,000 1
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    Chip 1 Exchange 2N7002K_R1_00001 292,604
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    Avnet Asia 2N7002K_R1_00001 12 Weeks 6,000
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    PanJit Semiconductor 2N7002K_R1_10001

    MOSFETs 60V N-Channel Enhancement Mode MOSFET - ESD Protected
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    Mouser Electronics 2N7002K_R1_10001
    • 1 -
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    • 10000 $0.024
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    NAC 2N7002K_R1_10001 3,000
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    PanJit Semiconductor 2N7002K R1

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    Bristol Electronics 2N7002K R1 3,000
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    PanJit Semiconductor 2N7002K-R1-00501

    MOSFETs SOT23 N CHAN 60V
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    TTI 2N7002K-R1-00501 Reel 39,000 3,000
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    Find more 2N7002K_R1 price and stock on Findchips.com

    2N7002K_R1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N7002K_R1_00001 PanJit Group SOT-23, MOSFET Original PDF

    2N7002K_R1 Datasheets Context Search

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    2N7002K R1

    Abstract: No abstract text available
    Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF 2N7002K 500mA 200mA 2011/65/EU IEC61249 OT-23 OT-23 2010-REV 2N7002K R1

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF 2N7002K 500mA 200mA 2002/95/EC IEC61249 OT-23 OT-23 2010-REV

    Untitled

    Abstract: No abstract text available
    Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF 2N7002K OT-23 500mA 200mA 2002/95/EC IEC61249 2010-REV

    2N7002K

    Abstract: K72 MARKING SOT-23 2N7002K_R1
    Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω 0.006(0.15)MIN. • RDS(ON), [email protected],IDS@200mA=4Ω 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF 2N7002K 500mA OT-23 2002/95/EC IEC61249 200mA 2010-REV RB500V-40 2N7002K K72 MARKING SOT-23 2N7002K_R1