2E12
Abstract: 2N7281D 2N7281H 2N7281R 3E12 FRL430
Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL430 D, R, H 2N7281D, 2N7281R 2N7281H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 2A, 500V, RDS(on) = 2.50Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts
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FRL430
2N7281D,
2N7281R
2N7281H
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
2N7281D
2N7281H
2N7281R
3E12
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FRL-230
Abstract: 2N7272 2N7281 2N7275 2N7278 frl130,
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 November 2004. MIL-PRF-19500/604B 30 July 2004 SUPERSEDING MIL-PRF-19500/604A 21 June 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
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MIL-PRF-19500/604B
MIL-PRF-19500/604A
2N7272,
2N7275,
2N7278,
2N7281,
MIL-PRF-19500.
FRL-230
2N7272
2N7281
2N7275
2N7278
frl130,
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Untitled
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 5ÖE D iU HARRIS W SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRL430 D, R, H • 43D2271 004S 7GD ^23 « H A S 2N7281D, 2N7281R 2N7281H Radiation Hardened N-Channel Power MOSFETs December 1992 Features • 2A, 500V, RDS(on) - 2.500
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FRL430
2N7281D,
2N7281R
2N7281H
100KRAD
300KRAD
1000KRAD
3000KRAD
004S703
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Untitled
Abstract: No abstract text available
Text: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL430 D, R, H November 1994 2N7281D, 2N7281R 2N7281H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 2A, 500V, RDS(on) = 2.50ft TO-205AF • Second Generation Rad Hard MOSFET Results From New Design C oncepts
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FRL430
2N7281D,
2N7281R
2N7281H
100KRAD
300KRAD
1000KRAD
3000KRAD
FRL420PH0T0
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Untitled
Abstract: No abstract text available
Text: SKI Harris S E M I C O N D U C T O R 2N7281D, 2N7281R 2N72S1H REGISTRATION PENDING Currently Available as FRL430 D, R, H u -i -j Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 2A, 500V, RDS(on) = 2.501} TQ-205AF • Second Generation Rad Hard MOSFET Result« From New Design Concepts
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2N7281D,
2N7281R
2N72S1H
TQ-205AF
FRL430
100KRAD
300KRAD
1000KRAD
3000KRAD
AN-8831,
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Untitled
Abstract: No abstract text available
Text: HARRIS SEniCOND SECTOR SbE ]> • 43Q2271 00422'*! lbT H H A S Radiation Hardness Assurance Program N-C H AN N EL RAD HARD PO W ER MO SFETS INITIAL RATINGS Id s rDS ON 126X182 3 FRM230D 126X182 3 100 14 0.18 2 -4 200 8 0.50 2 -4 FRM234D 126X182 3 250 7 0.70
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43Q2271
126X182
FRM230D
FRM234D
FRM430D
FRL130D
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Untitled
Abstract: No abstract text available
Text: Pre-Post Radiation Characteristics N-Channel P O S T 10K R A D O R P O S T 100K R A D SI R A T IN G S b (A) R DS(ON) V g S(TH) B V q ss PART NUM BER (£1) 100 2N7271 204AA 14 0.180 R A T ED 200 250 500 P O S T 1M R A D (SI) R A T IN G S F*d s (OM) V GS(TH)
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204AA
205AF
257AA
204AE
254AA
258AA
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2N7289
Abstract: 2N7308 2N7331
Text: Tactical and Strategic Level Selections Radiation Hardened MOSFETs N-Channei TO-3 TO-39 TO-257 TO-254 TO-258 INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL FRM130D FRM130R FRM130H 2N7271 FRL130D FRL130R FRL130H 2N7272 . . FRS130D FRS130R
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FRM130D
FRM130R
FRM130H
FRM230D
FRM230R
FRM230H
FRM234D
FRM234R
FRM234H
FRM430D
2N7289
2N7308
2N7331
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equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:
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1-800-4HARRIS
equivalent data book of 10N60 mosfet
MC14016CP
GD4511
an-6466
CX 2859 SMD
74AC14 spice
6120* harris
HCF4018be
7028 SMD Transistor
spice irfbc40
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