2PG001
Abstract: Panasonic IGBT TO220 2PG002 2PG003
Text: Fast switching 150 ns and low VCE(sat) (2.4 V) PDP Drive IGBT Devices: 2PG00X Series Overview The 2PG00X series are PDP drive IGBT devices that respond to the needs for fast switching and low loss characteristics associated with the increasing image quality and lower power of PDP displays. These
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2PG00X
2PG001ã
2PG002/2PG003ã
150ns
2PG002ã
190ns
2PG001
Panasonic IGBT TO220
2PG002
2PG003
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IGBT 2pg011
Abstract: 2PG011
Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package Low collector-emitter saturation voltage: VCE(sat) < 2.5 V High-speed switching: tf = 185 ns (typ.)
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2002/95/EC)
2PG011
O-220D-A1
IGBT 2pg011
2PG011
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2PG002
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d Features Code TO-220F-A1
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2002/95/EC)
2PG002
O-220F-A1
2PG002
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2PG003
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG003 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Features Package Low collector-emitter saturation voltage: VCE(sat) < 2.4 V
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2002/95/EC)
2PG003
O-220F-A1
2PG003
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2pg003
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG003 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package Low collector-emitter saturation voltage: VCE(sat) < 2.4 V High speed hall time: tf = 200 nsec(typ.)
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2002/95/EC)
2PG003
O-220F-A1
2pg003
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2PG011
Abstract: 2pg009 2PG006 IGBT 2pg011 igbt display plasma TO-220D-A1 220d
Text: Fast switching 175 ns and low VCE(sat) (2.4 V) PDP Drive IGBT Devices: 2PG00X Series Overview The 2PG00X series are PDP drive IGBT devices that respond to the needs for fast switching and low loss characteristics associated with the increasing image quality and lower power of PDP displays. These
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2PG00X
O-220D
O-220D-A1
2PG006
2PG009
2PG011
O-220D-A1
2PG011
IGBT 2pg011
igbt display plasma
TO-220D-A1
220d
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2pg001
Abstract: 2PG001+equivalent
Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Features Package Low collector-emitter saturation voltage: VCE(sat) < 2.5 V
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2002/95/EC)
2PG001
O-220F-A1
2PG001
2PG001+equivalent
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2pg001
Abstract: 2pg001 datasheet 2PG001 IGBT 2PG001 equivalent
Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package Low collector-emitter saturation voltage: VCE(sat) < 2.5 V High speed hall time: tf = 250 nsec(typ.)
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2002/95/EC)
2PG001
O-220F-A1
2pg001
2pg001 datasheet
2PG001 IGBT
2PG001 equivalent
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2PG009
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package Low collector-emitter saturation voltage: VCE(sat) < 2.5 V High-speed switching: tf = 185 ns (typ.)
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2002/95/EC)
2PG009
O-220D-A1
2PG009
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2PG002
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Features Package Low collector-emitter saturation voltage: VCE(sat) < 2.4 V
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2002/95/EC)
2PG002
O-220F-A1
2PG002
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2pg001
Abstract: 2PG003
Text: Realizes High-Speed Switching and Low VCE sat IGBT for PDP Driving 2PG001/2/3 Overview 0.7±0.1 5.5±0.2 4.2±0.2 2.7±0.2 φ3.1±0.1 2PG001⋅⋅⋅VCE(sat)<2.5V 1.3±0.2 1.4±0.1 0.5+0.2 –0.1 0.8±0.1 2.54±0.3 2PG002/2PG003⋅⋅⋅VCE(sat)<2.4V
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2PG001/2/3
2PG001â
2PG002/2PG003â
2PG001/2/3
2pg001
2PG003
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2PG011
Abstract: IGBT 2pg011 2pg0 2 SJN00008AED 2pg011pcta
Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package Low collector-emitter saturation voltage: VCE(sat) < 2.5 V High-speed switching: tf = 185 ns (typ.)
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2PG011
O-220D-A1
2PG011
IGBT 2pg011
2pg0
2 SJN00008AED
2pg011pcta
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2PG006
Abstract: SJN00006AED
Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package Low collector-emitter saturation voltage: VCE(sat) < 2.4 V High-speed switching: tf = 175 ns (typ.)
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2PG006
O-220D-A1
2PG006
SJN00006AED
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2pg001
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG001 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d Features Code TO-220F-A1
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2PG001
O-220F-A1
2pg001
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2PG006
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package M Di ain sc te on na tin nc ue e/ d Features Absolute Maximum Ratings TC = 25°C
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2PG006
O-220D-A1
2PG006
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2PG009
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package Low collector-emitter saturation voltage: VCE(sat) < 2.5 V High-speed switching: tf = 185 ns (typ.)
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2PG009
O-220D-A1
2PG009
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2pg002
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG002 N-channel enhancement mode IGBT For plasma display panel drive For high speed switching circuits • Package Low collector-emitter saturation voltage: VCE(sat) < 2.4 V High speed hall time: tf = 190 nsec(typ.)
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2PG002
O-220F-A1
2pg002
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2PG006
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG006 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package Low collector-emitter saturation voltage: VCE(sat) < 2.4 V High-speed switching: tf = 175 ns (typ.)
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2PG006
O-220D-A1
2PG006
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2PG011
Abstract: IGBT 2pg011 SJN00008AED
Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package Low collector-emitter saturation voltage: VCE(sat) < 2.5 V High-speed switching: tf = 185 ns (typ.)
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2002/95/EC)
2PG011
O-220D-A1
2PG011
IGBT 2pg011
SJN00008AED
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2pg009
Abstract: 10mA510 2pg0
Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package Low collector-emitter saturation voltage: VCE(sat) < 2.5 V High-speed switching: tf = 185 ns (typ.)
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2PG009
O-220D-A1
2pg009
10mA510
2pg0
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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