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Toshiba America Electronic Components 2SA1681(TE12L,ZC) Trans GP BJT PNP 50V 2A 1000mW 4-Pin(3+Tab) PW-Mini T/R
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Verical	2SA1681(TE12L,ZC)		175		164	1 - 10 - 100 - 1000 $0.1913 10000 $0.1913	Buy Now
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2SA1681 Datasheets (14)

Part	Manufacturer	Description	Datasheet Type	PDF
2SA1681	Kexin	Power Switching Applications	Original	PDF
2SA1681	Toshiba	PNP transistor	Original	PDF
2SA1681	TY Semiconductor	Power Switching Applications - SOT-89	Original	PDF
2SA1681	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SA1681	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SA1681	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SA1681	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SA1681	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SA1681	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SA1681	Toshiba	Silicon PNP transistor for power amplifier and power switching applications	Scan	PDF
2SA1681	Toshiba	TRANSISTOR SILICON PNP EPITAXIAL TYPE(PCT PROCESS)	Scan	PDF
2SA1681TE12L	Toshiba	2SA1681 - TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF
2SA1681(TE12L,F)	Toshiba	2SA1681 - TRANS PNP 50V 2A PW-MINI	Original	PDF
2SA1681TE12R	Toshiba	2SA1681 - TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF

2SA1681 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 2SA1681 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1681 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 300 ns (typ.)	Original	PDF	2SA1681 2SC4409 SC-62
transistor smd marking KA Abstract: Marking KA 2SA1681 2SC4409 smd 1A smd marking KA smd marking TF Text: Transistors SMD Type Power Switching Applications 2SC4409 Features Low Collector Saturation Voltage: VCE sat = 0.5V(max)(IC = 1A) High Speed Switching Time: tstg = 500ns(typ.) Small Flat Package PC = 1.0 to 2.0W (mounted on a ceramic substrate) Complementary to 2SA1681	Original	PDF	2SC4409 500ns 2SA1681 100mA transistor smd marking KA Marking KA 2SA1681 2SC4409 smd 1A smd marking KA smd marking TF
2SA1681 Abstract: 2SC4409 Text: 2SA1681 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1681 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) · High speed switching time: tstg = 300 ns (typ.)	Original	PDF	2SA1681 2SC4409 2SA1681 2SC4409
2SA1681 Abstract: 2SC4409 Text: 2SA1681 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1681 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 300 ns (typ.)	Original	PDF	2SA1681 2SC4409 2SA1681 2SC4409
SMD transistor 23 Abstract: smd transistor marking 1A 2SA1681 la smd marking MARKING LA 1a smd transistor 2SC4409 smd 1A marking LA SMD smd marking 1a Text: Transistors SMD Type Power Switching Applications 2SA1681 Features Low Saturation Voltage: VCE sat = -0.5V(max)(IC = -1A) High Speed Switching Time: tstg = 300ns(typ.) Small Flat Package PC = 1.0 to 2.0W (mounted on a ceramic substrate) Complementary to 2SC4409	Original	PDF	2SA1681 300ns 2SC4409 -100mA -10mA, SMD transistor 23 smd transistor marking 1A 2SA1681 la smd marking MARKING LA 1a smd transistor 2SC4409 smd 1A marking LA SMD smd marking 1a
2SA1681 Abstract: 2SC4409 Text: 2SA1681 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1681 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 300 ns (typ.)	Original	PDF	2SA1681 2SC4409 2SA1681 2SC4409
Untitled Abstract: No abstract text available Text: SMD Type Product specification 2SA1681 Features Low Saturation Voltage: VCE sat = -0.5V(max)(IC = -1A) High Speed Switching Time: tstg = 300ns(typ.) Small Flat Package PC = 1.0 to 2.0W (mounted on a ceramic substrate) Complementary to 2SC4409 Absolute Maximum Ratings Ta = 25	Original	PDF	2SA1681 300ns 2SC4409 -10mA, -100mA
2SA1681 Abstract: 2SC4409 Text: 2SA1681 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1681 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 300 ns (typ.)	Original	PDF	2SA1681 2SC4409 2SA1681 2SC4409
2SA1681 Abstract: 2SC4409 Text: 2SA1681 シリコンPNPエピタキシャル形 PCT方式東芝トランジスタ 2SA1681 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A)	Original	PDF	2SA1681 2SC4409 SC-62 20070701-JA 2SA1681 2SC4409
2SA1681 Abstract: 2SC4409 Text: 2SC4409 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4409 Power Amplifier Applications Power switching applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) • High speed switching time: tstg = 500ns (typ.)	Original	PDF	2SC4409 500ns 2SA1681 2SA1681 2SC4409
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	PDF	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
2SA1681 Abstract: 2SC4409 Text: 2SC4409 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4409 Power Amplifier Applications Power switching applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) • High speed switching time: tstg = 500ns (typ.)	Original	PDF	2SC4409 500ns 2SA1681 2SA1681 2SC4409
ESM 740 Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126 Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.	Original	PDF	SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
2SA1681 Abstract: 2SC4409 Text: 2SC4409 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC4409 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ･エミッタ間飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) •	Original	PDF	2SC4409 2SA1681 SC-62 20070701-JA 2SA1681 2SC4409

2SA168 Abstract: No abstract text available Text: TOSHIBA 2SA1681 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCES 2 S A 1 6 81 Unit in mm PO W ER SWITCHING APPLICATIONS l.GMAX. 4.6MAX. 1.7MAX. Low Saturation Voltage 0M ±0.05 : V ç e ($at)~ —0.5V (Max.) 5 ÍTn = _1 Ai'	OCR Scan	PDF	2SA1681 300ns 2SC4409 100mA --10m --30m. --100m --300m 2SA168
2SA1681 Abstract: 2SC4409 A1681 Text: TO SH IBA 2SA1681 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCES 2 S A 1 681 POWER AMPLIFIER APPLICATIONS Unit in mm POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. Low Saturation Voltage 0.4 ±0.05 : V q ^ (sat)“ —0.5V (Max.) (IC = —1A)	OCR Scan	PDF	2SA1681 300ns 2SC4409 2SA1681 2SC4409 A1681
Untitled Abstract: No abstract text available Text: SILICON PNP EPITAXIAL TYPE 2SA1681 POWER AMPL I F I E R APPLICATIONS. Unit in mm POWER SWITCHING APPLICATIONS. 1.6 MAX. 0-4 ¿0.05 4.6MAX. 1. 7 MAX. . Low Collector Saturation Voltage 3 b : V c e sat =-0.5V(Max.) (at Ic=-1A) . High Speed Switching Time : tstg=300ns(Typ.)	OCR Scan	PDF	2SA1681 300ns 2SC4409 -100mA -100m -300m
A1681 Abstract: 2SA1681 2SC4409 Text: TOSHIBA 2SA1681 2 S A 1 681 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCES Unit in mm POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V q ^ (sat)“ —0.5V (Max.) (IC = —1A) High Speed Switching Time: tstg = 300ns(Typ.)	OCR Scan	PDF	2SA1681 300ns 2SC4409 A1681 2SA1681 2SC4409
2SA1681 Abstract: 2SC4409 A1681 Text: TO SHIBA 2SA1681 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCES 2 S A 1 681 POWER AMPLIFIER APPLICATIONS Unit in mm POWER SW ITCHING APPLICATIONS 1.6MAX 4.6MAX. — 1.7MAX. Low Saturation Voltage 0.4 + 0.05 : VCE (sat)= —0.5V (Max.) (IC = —1A)	OCR Scan	PDF	2SA1681 300ns 2SC4409 --10mA, 100mA 2SA1681 2SC4409 A1681
2N3904 331 transistor Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 2SC1815(L) — 2SC2995 — * 2N3904 — 2SA1245 167 2SC1923 — 2SC2996 266 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272	OCR Scan	PDF	2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
70H40 Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©	OCR Scan	PDF	2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
2SC4415 Abstract: 2SC4418 2SC4398 2SC4427 2SC4393 2SC4394 2SC4396 2SC4397 2SC4399 2SC4400 Text: - 200 - W. n Ta=25T . *EP(àTc=25‘C) m % ffl iâ , , VCEO (V) 2SC4393 2SC4394 2SC4396 2SC4397 2SC4398 2SC4399 2SC4400 2SC4401 2SC4402 2SC4403 2SC4404 2SC4405 2SC4406 2SC4407 2SC4408 2SC4409 2SC4410 2SC4411 2SC4412 2SC4413 2SC4414 2SC4415 2SC4416 2SC4417	OCR Scan	PDF	2SC4393 2SC4394 2SC4396 2SC4397 2SC4398 2SC4399 2SC4400 900MHz 2SC4416 2SC4417 2SC4415 2SC4418 2SC4398 2SC4427 2SC4393 2SC4394 2SC4396 2SC4399 2SC4400
2SC144 Abstract: 2SD466 2sc5266 Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l\|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *	OCR Scan	PDF	T258-OMI FAX06 2SC144 2SD466 2sc5266
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC4409 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4409 Unit in mm ra POWER SWITCHING APPLICATIONS. 1.6MAX. 1.7MAX. • • • • • Low Collector Saturation Voltage : v CE(sat) = °-5V (Max.) (at Ic = lA)	OCR Scan	PDF	2SC4409 500ns 2SA1681 SC-62

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2SA1681 Price and Stock

Toshiba America Electronic Components 2SA1681(TE12L,ZC)

2SA1681 Datasheets (14)

2SA1681 Datasheets Context Search

Untitled

transistor smd marking KA

2SA1681

2SA1681

SMD transistor 23

2SA1681

Untitled

2SA1681

2SA1681

2SA1681

sn76131

2SA1681

ESM 740

2SA1681

2SA168

2SA1681

Untitled

A1681

2SA1681

2N3904 331 transistor

70H40

2SC4415

2SC144

Untitled