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    2SB1198 Price and Stock

    ROHM Semiconductor 2SB1198KT146R

    Trans GP BJT PNP 80V 0.5A 200mW 3-Pin SMT T/R
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    Verical 2SB1198KT146R 9,865 246
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    Mouser Electronics 2SB1198KT146R 3,166
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    ROHM Semiconductor 2SB1198KT146Q

    Trans GP BJT PNP 80V 0.5A 3-Pin SMT T/R
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    Verical 2SB1198KT146Q 2,468 269
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    2SB1198KT146Q 1,000 127
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    Mouser Electronics 2SB1198KT146Q
    • 1 $0.44
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    Quest Components 2SB1198KT146Q 2,108
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    Micro Commercial Components 2SB1198HE3-R-TP

    Bipolar Transistors - BJT PNP SILICON EPITAXIAL TRANSISTOR
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    Mouser Electronics 2SB1198HE3-R-TP
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    ROHM Semiconductor 2SB1198KFRAT146Q

    500 MA, 80 V, PNP, SI, SMALL SIGNAL TRANSISTOR
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    Quest Components 2SB1198KFRAT146Q 2,344
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    2SB1198KFRAT146Q 2,344
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    2SB1198KFRAT146Q 480
    • 1 $0.7
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    2SB1198KFRAT146Q 480
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    ROHM Semiconductor 2SB1198KL146Q

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    Quest Components 2SB1198KL146Q 1,500
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    Find more 2SB1198 price and stock on Findchips.com

    2SB1198 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1198 ROHM Low-frequency Transistor(-80V, -0.5A) Original PDF
    2SB1198 Unisonic Technologies LOW FREQUENCY PNP TRANSISTOR Original PDF
    2SB1198 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1198 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1198K Kexin PNP Transistors Original PDF
    2SB1198K ROHM Low-frequency Transistor (-80V, -0.5A) Original PDF
    2SB1198K ROHM Low-frequency Transistor (-80V, -0.5A) Original PDF
    2SB1198K TY Semiconductor PNP Transistors - SOT-23 Original PDF
    2SB1198K Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1198K ROHM EM3, UMT, SMT Transistors Scan PDF
    2SB1198KT146Q ROHM TRANS PNP 80V 0.5A SOT-346 Original PDF
    2SB1198KT146Q ROHM Low-Frequency Transistor (-80 V, -0.5 A) Original PDF
    2SB1198KT146R ROHM Low-Frequency Transistor (-80 V, -0.5 A) Original PDF
    2SB1198KT146R ROHM TRANS PNP 80V 0.5A SOT-346 Original PDF

    2SB1198 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR  DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor.  FEATURES * High breakdown voltage : BVCEO= -80V * Low VCE sat : VCE(sat)= -0.2V (Typ)


    Original     		PDF 2SB1198 2SB1198 A/-50mA) 2SB1198G-x-AE3-R OT-23 QW-R206-040

    2SB1198K

    Abstract: 2SD1782K T146 2SD1782K ROHM low capacitance NPN transistor
    Text: 2SD1782K Transistors Power Transistor 80V, 0.5A 2SD1782K zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) =0.2V(Typ.) (IC / IB=0.5 A / 50mA) 2) High VCEO, VCEO=80V 3) Complements the 2SB1198K. 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1


    Original     		PDF 2SD1782K 2SB1198K. SC-59 2SB1198K 2SD1782K T146 2SD1782K ROHM low capacitance NPN transistor

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB1198K SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low V CE sat .V CE(sat) =-0.2V 1 BVC EO=-80V 0.55 ● High berakdown voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 V CE(sat)=-0.2V 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


    Original     		PDF 2SB1198K OT-23 -100mA -50mA 100MHz

    2SB1198K

    Abstract: No abstract text available
    Text: 2SB1198K PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SC-59 A L S 2 FEATURES 3 Top View Dim Min Max A 2.70 3.10 B 1.30 1.70 C 1.00 1.30 B 1 D G Power dissipation : 0.2


    Original     		PDF 2SB1198K SC-59 -100mA -500mA -50mA 01-Jun-2002 2SB1198K

    npn 222

    Abstract: high hfe transistor NPN Transistor Characteristics NPN Silicon Epitaxial Planar Transistor transistor equivalent book 2SD1782K hFE is transistor NPN Transistor on 222 transistor Silicon NPN Epitaxial Planar Power Transistor SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE
    Text: Transistors Power Transistor 80V, 0.5A 2SD1782K FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 0.5A / 50mA) 2) High VCEO, VCEO = 80V 3) Complements the 2SB1198K. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor


    Original     		PDF 2SD1782K 2SB1198K. 96-222-D93) npn 222 high hfe transistor NPN Transistor Characteristics NPN Silicon Epitaxial Planar Transistor transistor equivalent book 2SD1782K hFE is transistor NPN Transistor on 222 transistor Silicon NPN Epitaxial Planar Power Transistor SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE

    2SD1782K ROHM

    Abstract: No abstract text available
    Text: Transistors Power Transistor 80V, 0.5A 2SD1782K FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 0.5A / 50mA) 2) High VCEO, VCEO = 80V 3) Complements the 2SB1198K. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor


    Original     		PDF 2SD1782K 2SB1198K. 96-222-D93) 2SD1782K ROHM

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. 2 1 FEATURES *High breakdown voltage : BVCEO= -80V *Low VCE sat : VCE(sat)= -0.2V (Typ) (Ic/IB = -0.5A/-50mA)


    Original     		PDF 2SB1198 2SB1198 A/-50mA) OT-23 QW-R206-040

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type PNP Transistors 2SB1198K SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low V CE sat .V CE(sat) =-0.2V 1 BVC EO=-80V 0.55 ● High berakdown voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 V CE(sat)=-0.2V 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1


    Original     		PDF 2SB1198K OT-23 -100mA -50mA 100MHz

    sot akr

    Abstract: No abstract text available
    Text: 2SB1198K SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 2.92 0.35 1.17 Features — — — 2.80 1.60 Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) High breakdown voltage BVCEO=-80V Complements the 2SD1782K 0.15 1.90 Dimensions in inches and (millimeters)


    Original     		PDF 2SB1198K OT-23-3L OT-23-3L -50mA) 2SD1782K -100mA -500mA, -50mA -50mA, 100MHz sot akr

    50256

    Abstract: 2SB1198K MJE50
    Text: SPICE PARAMETER 2SB1198K by ROHM TR Div. * 2SB1198K PNP BJT model * Date: 2006/12/15 .MODEL 2SB1198K PNP + IS=270.00E-15 + BF=202.53 + VAF=25 + IKF=4.9986 + ISE=270.00E-15 + NE=1.5975 + BR=6.4472 + VAR=100 + IKR=.718 + ISC=8.7772E-12 + NC=1.5323 + NK=1.2944


    Original     		PDF 2SB1198K Q2SB1198K 00E-15 7772E-12 08E-12 583E-12 31E-12 09E-9 50256 2SB1198K MJE50

    2SB1198K

    Abstract: 2SD1782K 2SD1782K ROHM
    Text: Transistors Low-frequency Transistor *80V, *0.5A 2SB1198K FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FExternal dimensions (Unit:s mm) FStructure Epitaxial planar type


    Original     		PDF 2SB1198K 2SD1782K. 96-136-B93) 2SB1198K 2SD1782K 2SD1782K ROHM

    Untitled

    Abstract: No abstract text available
    Text: Transistors AEC-Q101 Qualified Low-frequency Transistor *80V, *0.5A 2SB1198KFRA 2SB1198K FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 2SD1782KFRA 3) Complements the 2SD1782K. FExternal dimensions (Unit:s mm)


    Original     		PDF AEC-Q101 2SB1198KFRA 2SB1198K 2SD1782KFRA 2SD1782K. 96-136-B93)

    2SB1198

    Abstract: sot akr
    Text: UTC 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. 2 1 FEATURES *High breakdown voltage : BVCEO= -80V *Low VCE sat : VCE(sat)= -0.2V (Typ) (Ic/IB = -0.5A/-50mA)


    Original     		PDF 2SB1198 2SB1198 A/-50mA) OT-23 QW-R206-040 sot akr

    bvceo

    Abstract: 231 transistor 2SB1198K 2SD1782K
    Text: Transistors Low-frequency Transistor *80V, *0.5A 2SB1198K FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FExternal dimensions (Unit:s mm) FStructure Epitaxial planar type


    Original     		PDF 2SB1198K 2SD1782K. 96-136-B93) bvceo 231 transistor 2SB1198K 2SD1782K

    transistor equivalent book 2SD1782K

    Abstract: 2SB1198K 2SD1782K
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SB1198K TRANSISTOR PNP FEATURES Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) z High breakdown voltage BVCEO=-80V z Complements the 2SD1782K 1. BASE


    Original     		PDF OT-23-3L OT-23-3L 2SB1198K -50mA) 2SD1782K -100mA -500mA, -50mA -50mA, 100MHz transistor equivalent book 2SD1782K 2SB1198K 2SD1782K

    akr sot-23

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR „ 3 DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. 2 1 SOT-23 „ FEATURES * High breakdown voltage : BVCEO= -80V * Low VCE sat : VCE(sat)= -0.2V (Typ)


    Original     		PDF 2SB1198 2SB1198 OT-23 A/-50mA) OT-23 2SB1198L-x-AE3-R 2SB1198G-x-AE3-R QW-R206-040 akr sot-23

    Untitled

    Abstract: No abstract text available
    Text: 2SB1198K Transistor, PNP Features Dimensions Units: mm available in SMT3 (SMT, SC-59) package 2SB1198K (SMT3) 2.9 * 0-2 package marking: 2SB1198K; AK-*, where ★ is hFE code low collector saturation voltage, typically VCE(sat) = -0.2 V for Ic /Ib = -0.5 A/-50 mA


    OCR Scan     		PDF 2SB1198K SC-59) 2SB1198K; 2SD1782K

    Untitled

    Abstract: No abstract text available
    Text: 2SB1198K h 7 > y ^ $ / T ransistors 2SB 1198K Epitaxial Planar PNP Silicon Transistor <fi£Ji}J&^2J*8llifll/L o w Freq. Power Amp. • fcft i'W i vtiim/Dimensions Unit : mm 1) = ! U - 7 ^ t S i P VCE (sa t)= -0 .2 V (Typ.) (lc /lB = - 0 .5 A /- 5 0 m A )


    OCR Scan     		PDF 2SB1198K 1198K 2SD1782K A/--50mA) 2SD1782K.

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low-frequency Transistor -80V, - 0.5A 2SB1198K • Features 1) •E x te rn a l dim ensions (Unit:s mm) LOW VcE(sat). VcE(sat) = — 0.2V (Typ.) (I c / I b = 2) 2.9±0.2 1 1 + 0 -2 11- 0 1 1.0±O.2_ - 0 .5 A /- 5 0 m A ) . ± 0.1 08 0.950.95


    OCR Scan     		PDF 2SB1198K 2SD1782K. SC-59

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low-frequency Transistor -80V, - 0.5A 2SB1198K • Features 1) •E x te rn a l dimensions (Unit:s mm) LOW VcE(sat). 2.9+0.2 VcE(sat) = —0.2V (Typ.) (Ic / I b +0-2 L—i 1 11 1.9+0.2 = - 0 .5 A /-5 0 m A ) 0 .8 ± 0.1 □ 2) High breakdown voltage.


    OCR Scan     		PDF 2SB1198K 2SD1782K. SC-59 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c

    Untitled

    Abstract: No abstract text available
    Text: Transistors Low-frequency Transistor -80V, - 0.5A 2SB1198K •External dimensions (Unit:s mm) • F e a tu re s 1) LOW VcE(sat). VcE(sat) = — 0.2V (Typ.) ( I c / I b = -0.5A /-50m A ) 2) High breakdown voltage. B V ceo = — 8 0 V 3) Complements the 2SD1782K.


    OCR Scan     		PDF 2SB1198K /-50m 2SD1782K. -100m

    Untitled

    Abstract: No abstract text available
    Text: 2SB1198K Transistor, PNP Features Dimensions Units : mm available in SMT3 (SMT, SC-59) package 2SB1198K (SMT3) package marking: 2SB1198K; AK-*, where ★ is hFE code $ low collector saturation voltage, typically VCE(sat) = -0.2 V for lc/lB = -0-5 A/-50 mA


    OCR Scan     		PDF 2SB1198K SC-59) 2SB1198K; 2SD1782K stg25 2SB1198K

    761b nec

    Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
    Text: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338


    OCR Scan     		PDF 2SB927 2SB739 2SB1010 2SA1705 2SB740 2SA684 2SB1035 2SB1041 2SA133S 2SA1313 761b nec 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SB686 761-B

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan     		PDF 2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C