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    2SB1373 Search Results

    2SB1373 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1373 Panasonic Silicon PNP triple diffusion planar type power transistors Original PDF
    2SB1373 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1373 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1373 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1373 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1373 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1373 Panasonic Silicon PNP Triple Diffused Planar Power Transistor Scan PDF

    2SB1373 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1373

    Abstract: 2SD2066
    Text: SavantIC Semiconductor Product Specification 2SB1373 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SD2066 ·Wide area of safe operation APPLICATIONS ·For high power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


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    PDF 2SB1373 2SD2066 -160V; -20mA 2SB1373 2SD2066

    2SD2066

    Abstract: 2SB1373
    Text: Power Transistors 2SD2066 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1373 Unit: mm 15.0±0.5 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 φ3.2±0.1 3.5 ● 19.0±0.3 ● 16.2±0.5 ● High breakdown voltage: VCEO = 160V min.


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    PDF 2SD2066 2SB1373 2SD2066 2SB1373

    2SD2066

    Abstract: 2SB1373
    Text: SavantIC Semiconductor Product Specification 2SD2066 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Wide area of safe operation ·Complement to type 2SB1373 APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base


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    PDF 2SD2066 2SB1373 2SD2066 2SB1373

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2066 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1373 Unit: mm 15.0±0.5 4.5±0.2 M Di ain sc te on na tin nc ue e/ d • Features 4.0±0.1 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 φ3.2±0.1


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    PDF 2SD2066 2SB1373

    2SD2066

    Abstract: 2SB1373
    Text: Power Transistors 2SD2066 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1373 M Di ain sc te on na tin nc ue e/ d Unit: mm 15.0±0.5 4.0±0.1 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 φ3.2±0.1 3.5 ● 19.0±0.3


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    PDF 2SD2066 2SB1373 2SD2066 2SB1373

    2SB1373

    Abstract: 2SD2066
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1373 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -160V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2066 APPLICATIONS ·Designed for high power amplifications.


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    PDF 2SB1373 -160V 2SD2066 -160V; -20mA; 2SB1373 2SD2066

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1373 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2066 Unit: mm 15.0±0.5 4.5±0.2 M Di ain sc te on na tin nc ue e/ d • Features 4.0±0.1 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 φ3.2±0.1


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    PDF 2SB1373 2SD2066

    2SB1373

    Abstract: 2SD2066
    Text: Power Transistors 2SB1373 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2066 Unit: mm 15.0±0.5 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 φ3.2±0.1 3.5 ● 19.0±0.3 ● 16.2±0.5 ● Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics


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    PDF 2SB1373 2SD2066 2SB1373 2SD2066

    2SB1373

    Abstract: 2SD2066
    Text: Power Transistors 2SB1373 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2066 M Di ain sc te on na tin nc ue e/ d Unit: mm 15.0±0.5 4.0±0.1 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 φ3.2±0.1 3.5 ● 19.0±0.3


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    PDF 2SB1373 2SD2066 2SB1373 2SD2066

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2SB1373

    Abstract: 2SD2066 S1113
    Text: Power T ransistors 2SB1373 2SB1373 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2066 U n it: mm 4.7max. - • Features • V ery good linearity of DC c u rre n t gain 2.1» .¡.s■ tir r t Iife


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    PDF 2SB1373 2SD2066 Q01b31Q 2SB1373 2SD2066 S1113

    Untitled

    Abstract: No abstract text available
    Text: 2SD2066 Power Transistors 2SD2066 Silicon NPN Triple-Diffused Planar Type • Package Dimensions High Power Amplifier Complementary Pair with 2SB1373 ■ Features • H ig h -v o ltag e: V leo = 1 6 0 V m inim um • M inim izes c o m p o n e n t c o u n ts and sim plifies circ u itry


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    PDF 2SD2066 2SB1373

    2SB13

    Abstract: 2SD2066 2SB1373
    Text: Power T ransistors 2SB1373 2SB1373 Silicon PNP Triple-Diffused Planar Type P ackage Dim ensions High Power Am plifier C om plem entary Pair with 2 S D 2 0 6 6 Unit : mm 15.5max. 4.7max. • F eatures _ • V ery good linearity of DC current gain Iif e 2.1max,


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    PDF 2SB1373 2SD2066 0Dlb310 2SB13 2SD2066 2SB1373

    2SB1531

    Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140


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    PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SB1531 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A

    2SA1264N

    Abstract: 2sa143z 2SA1705 2SA1283 1818 2SA1613 2SB1421 2SA1821 2SA949 2SB1207
    Text: - m Type « tt No. « Manuf. 2 S A 1 78 5 = >¥ 2 S A 1 78 8 □— A 2 S A 1 78 9 □ — A H if SANYO 2 S A 1 78 7 ^ 2 S A 1 79 0 M £ S 1 TOSHIBA NEC 2SA1432 2SA1264N 2SB966 9SA1R3? 2SA1836 B aL H I TACH! 2SB1508 * ± a FUJITSU T MATSUSHITA 2SB1546 2SB1207


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    PDF 2SB1546 2SA143Z 2SB1207 2SA1264N 2SB966 2SB1362 2SB1508 2SB1373 2SA1821 2SA1832 2sa143z 2SA1705 2SA1283 1818 2SA1613 2SB1421 2SA1821 2SA949 2SB1207

    Untitled

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100


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    PDF 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SA1185 2SB1054/2SD1485 2SB1421 2SD1457 2SD1457A 2SB1252/2SD1892 2SB1502/2SD2275

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


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    PDF 125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526

    2SA1302 TOSHIBA

    Abstract: 2SA1302 Toshiba 2Sa1302 SB 1156 2sb817 2SB863 2SB1371 mitsubishi 1183 2SB1407 2SB1201
    Text: - 64 - S € Type No. tt « Manuf. H # SANYO M S TOSHIBA S NEC S ÏZ HITACHI 8 ± Ü FUJITSU fé T MATSUSHITA 2SB 1 1 4 « fé T 2SB 1149— ' « 2S6 1151 , B « 2SB1165 2SB 1152 «5 T 2SB817 2SB 1153 fé T 2SB 1155" fâ T 2SB 1156 - fé T 2SB 1157 fé T 2SB776


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    PDF 2SB1267 2SB937A 2SB1165 2SB933 2SB817 2SB863 2SA1227A 2SA1302 2SB1371 2SB776 2SA1302 TOSHIBA 2SA1302 Toshiba 2Sa1302 SB 1156 2SB1371 mitsubishi 1183 2SB1407 2SB1201

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SD2340 equivalent

    Abstract: D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions General-use Vceo (V) lc VcE(sat) (A) (V) 50 7 100 140 80 LOW VcE(sat) D arlington High-hfE Packag e (No.) lc Ib <0.8 (A) 7 (mA) 700 5 <2 3


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    PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SD2340 equivalent D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707

    2SD2340 equivalent

    Abstract: D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2sd1641 2SD2052 equivalent
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large-Power Transistors Application Functions VcEO (V) General-use 50 100 140 lc 80 LOW VcE(sat) 150 200 400 55 60 80/100 Darlington High-hra. (A) VcE(sat) (V) 7 5 7 10 15 20 6 6 20 4


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    PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SD2340 equivalent D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2SD2052 equivalent

    an6512n

    Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
    Text: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.


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    PDF MN115P MN116P MN1201A MN1201M MN1201S MN1202M MN1204A MN1204B MN1204E MN1204F an6512n mn1225 MN1280 mn6520 MN6130 MN6147C MN12C261D MN12C201D MN3107

    D1276A

    Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
    Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463


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    PDF 2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A