2SB1503
Abstract: 2SD2276
Text: SavantIC Semiconductor Product Specification 2SB1503 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2276 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification
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2SB1503
2SD2276
2SB1503
2SD2276
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2SD2276
Abstract: 2SB1503
Text: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1503 Unit: mm Symbol Ratings Unit Collector to base voltage VCBO 160 V Collector to emitter voltage VCEO 140 V Emitter to base voltage
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2SD2276
2SB1503
2SD2276
2SB1503
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2SB1503
Abstract: 2SD2276 2sb15
Text: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1503 5.0±0.3 3.0 26.0±0.5 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open)
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2SD2276
2SB1503
2SB1503
2SD2276
2sb15
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2SB1503
Abstract: 2SD2276
Text: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB1503 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector to base voltage VCBO 160 V Collector to emitter voltage
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2SD2276
2SB1503
2SB1503
2SD2276
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1503 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD2276 1.0±0.2 Unit Collector-base voltage Emitter open VCBO −160 V Collector-emitter voltage (Base open) VCEO −140 V Emitter-base voltage (Collector open)
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2SB1503
2SD2276
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2SB1503
Abstract: 2SD2276
Text: Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification Complementary to 2SD2276 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO −160 V Collector to emitter voltage VCEO −140 V Emitter to base voltage
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2SB1503
2SD2276
2SB1503
2SD2276
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2SB1503
Abstract: 2SD2276
Text: Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2276 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –160
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2SB1503
2SD2276
2SB1503
2SD2276
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1503 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD2276 5.0±0.3 3.0 (10.0) (6.0) (2.0) (4.0) 20.0±0.5 (1.5) d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow
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2SB1503
2SD2276
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2SB1503
Abstract: 2SD2276
Text: Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification Complementary to 2SD2276 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO −160 V Collector to emitter voltage VCEO −140 V Emitter to base voltage
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2SB1503
2SD2276
2SB1503
2SD2276
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2SB1503
Abstract: 2SD2276
Text: Power Transistors 2SB1503 Silicon PNP epitaxial planar type darlington Unit: mm For power amplification Complementary to 2SD2276 5.0±0.3 3.0 (10.0) (6.0) (2.0) (4.0) 20.0±0.5 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current
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2SB1503
2SD2276
2SB1503
2SD2276
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Untitled
Abstract: No abstract text available
Text: , One. 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1503 Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain: hFE= 5000(Min)@lc= -7A • Low-Collector Saturation VoltagePIN 1.BASE
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2SB1503
2SD2276
-160V
-140V;
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1503 1.5 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 160 V Collector-emitter voltage (Base open) VCEO 140
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2SD2276
2SB1503
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2SD2276
Abstract: 2SB1503
Text: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB1503 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector to base voltage VCBO 160 V Collector to emitter voltage
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2SD2276
2SB1503
2SD2276
2SB1503
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2SB1503
Abstract: 2SD2276
Text: Power Transistors 2SD2276 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1503 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 160 V Collector-emitter voltage (Base open)
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2SD2276
2SB1503
2SB1503
2SD2276
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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2SB1503
Abstract: 2SD2276 darlington power transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -7A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2276 APPLICATIONS
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2SD2276
-160V;
-140V;
2SB1503
2SD2276
darlington power transistor
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2SB1496
Abstract: 2SB1466 2SB1516 2sb148 2SB1464 2SB1465 2SB1467 2SB1468 2SB1469 2SB1470
Text: - 92 - Ta=25t5. *EP(3Tc=25?C £ 2SB1464 2SBI465 2SB1466 2SB1467 2SB1468 2SB1469 2SB1470 2SB1471 2SB1472 2SB1473 ni-m ine ¿0014l 0 2SB1488 2SB1489 2SB1490 2SB1492 2SB1493 2SB1494 2SB1496 2SB1498 2SB1500 2SB1501 2SB1502 2SB1503 2SB1504 2SB1505 2SB1507 2SB1508
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OCR Scan
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2SB1464
2SB1465
-200u
2SB1466
2SB1467
2SB1468
2SB1469
2SD2275
2SB1502
2SD2276
2SB1496
2SB1516
2sb148
2SB1467
2SB1468
2SB1470
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2SB1531
Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140
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OCR Scan
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2SA1185
2SB1054/2SD1485
2SB1421
2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SD1457
2SD1457A
2SC4535
2SD1641
2SB1531
2SD2340 equivalent
2SB1255
2sb1492
2SD2328
2SA1185
2SB1421
2SC4535
2SD1457
2SD1457A
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2sb1355
Abstract: 2SB1493 2SB1516 2SA1842 2sb1261 2SB906 2SB1328 2SB1329 2SB1332 2SA1770
Text: - m € Type No. 2S5 1541 2SB 1542 2S8 1543 2SB 1544 2SB 1545 2SB 1546 2SB 1548 ^ 2SB 1549 2SB 1550 2SB 1551 2SB 1552 2SB 1553 2SB i554 2SB 1555 2S8 1556 2SB 1557 2SB 1558 2SB 1559 2SB 1561 2SB 1562 2SB 1563 2SB 1564 2SB 1565 2SB 1566 ^ 2SB 1567 2SB 1568 ^
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OCR Scan
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2SR562
2SB1329
2SA1706
2SB1433
2SB1517
2SA1707
2SA1708
2SB1459
2SB1332
2sb1355
2SB1493
2SB1516
2SA1842
2sb1261
2SB906
2SB1328
2SB1329
2SB1332
2SA1770
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Untitled
Abstract: No abstract text available
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100
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OCR Scan
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2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SA1185
2SB1054/2SD1485
2SB1421
2SD1457
2SD1457A
2SB1252/2SD1892
2SB1502/2SD2275
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2SD2232
Abstract: 2sb1492 2SD2255 2SD2230 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247
Text: - 286 - W c k & fè » rl ^ f± -in S m iê V'CBO V 2SD223Q 2SD2232 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247 2SD2249 2SD2250 2SD2252 2SD2254 2SD2255 2SD2256 2SD2258 2SD2259 2SD2260 2SD2263 2SD2265 2SD2266 2SD2273 2SD2274 2SD2275 2SD2276 2SD2280 2SD2281
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OCR Scan
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2SD2230
2SD2232
2SD2233
2SD2234
2SD2240
2SD2242
2SD2242A
2SB1500
2SD221
2SB1501
2sb1492
2SD2255
2SD2233
2SD2234
2SD2247
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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OCR Scan
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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2SD2340 equivalent
Abstract: D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions General-use Vceo (V) lc VcE(sat) (A) (V) 50 7 100 140 80 LOW VcE(sat) D arlington High-hfE Packag e (No.) lc Ib <0.8 (A) 7 (mA) 700 5 <2 3
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OCR Scan
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2SA1185
2SB1054/2SD1485
2SB1421
2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SD1457
2SD1457A
2SC4535
2SD1641
2SD2340 equivalent
D2254
2SB1493
2SD1485
2SB1531
2SD2328
2SA1185
2SD2052 equivalent
2SD1641
2SD1707
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