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Samsung Semiconductor 2SC1983 TRANSISTOR,BJT,NPN,60V V(BR)CEO,3A I(C),TO-220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SC1983		296			1 $3.5 10 $3.5 100 $3.5 1000 $1.1375 10000 $1.1375	Buy Now
Sanken Electric Co Ltd 2SC1983 TRANSISTOR,BJT,NPN,60V V(BR)CEO,3A I(C),TO-220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SC1983		152			1 $4.5 10 $2.25 100 $1.95 1000 $1.95 10000 $1.95	Buy Now
Sanken Electric Co Ltd 2SC1984 TRANSISTOR,BJT,NPN,80V V(BR)CEO,3A I(C),TO-220
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Quest Components	2SC1984		7			1 $6.75 10 $3.375 100 $3.375 1000 $3.375 10000 $3.375	Buy Now
NEC Electronics Group 2SC1988 RF SMALL SIGNAL BIPOLAR TRANSISTOR, 0.07A I(C), 1-ELEMENT, L BAND, SILICON, NPN, TO-72
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SC1988		2			1 $51.4958 10 $51.4958 100 $51.4958 1000 $51.4958 10000 $51.4958	Buy Now

2SC198 Datasheets (131)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC198	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SC198	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SC198	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SC198	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC198	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SC198	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SC198	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC1980	Panasonic	Silicon NPN epitaxial planer type transistor	Original	PDF
2SC1980	Panasonic	Silicon NPN epitaxial planer type	Original	PDF
2SC1980	Panasonic	NPN Transistor	Original	PDF
2SC1980	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SC1980	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SC1980	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC1980	Unknown	The Japanese Transistor Manual 1981	Scan	PDF

2SC1980	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SC1980	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SC1980	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC1980	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SC1980	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC1980	Unknown	Cross Reference Datasheet	Scan	PDF

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2SC198 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • High collector-emitter voltage Base open VCEO • Low noise voltage NV 0.7±0.2 M Di ain	Original	PDF	2SC1980 2SA0921
2SA0921 Abstract: 2SA921 2SC1980 Text: Transistor 2SA0921 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings (Ta=25˚C)	Original	PDF	2SA0921 2SA921) 2SC1980 2SA0921 2SA921 2SC1980
2SA0921 Abstract: 2SA921 2SC1980 Text: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV 0.7±0.2 • Features	Original	PDF	2SA0921 2SA921) 2SC1980 2SA0921 2SA921 2SC1980
2SA770 Abstract: 2SC1985 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA770 DESCRIPTION •Collector-Emitter Breakdown Voltage:V BR CEO= -60(V)(Min.) ·Complement to Type 2SC1985 APPLICATIONS ·Designed for audio and general purpose applications.	Original	PDF	2SA770 2SC1985 -25mA; 2SA770 2SC1985
2SA921 Abstract: 2SA92 2SC1980 2SC198 Text: Transistor 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 High collector to emitter voltage VCEO. Low noise voltage NV. • Absolute Maximum Ratings Ta=25˚C Parameter	Original	PDF	2SA921 2SC1980 2SA921 2SA92 2SC1980 2SC198
Untitled Abstract: No abstract text available Text: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2 d p lan inc ea se ed lud p lan m m es ht visi	Original	PDF	2SA0921 2SA921) 2SC1980
Untitled Abstract: No abstract text available Text: Transistors 2SA0921 2SA921 Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV 0.7±0.2	Original	PDF	2SA0921 2SA921) 2SC1980
2SC1983 Abstract: No abstract text available Text: 2SC1983 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2SC1983 Freq15M
Untitled Abstract: No abstract text available Text: 2SC1988 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12è V(BR)CBO (V)25 I(C) Max. (A)70m Absolute Max. Power Diss. (W)350m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)	Original	PDF	2SC1988
2SA0921 Abstract: 2SA921 2SC1980 Text: Transistor 2SA0921 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 Unit: mm 5.0±0.2 • Absolute Maximum Ratings 0.7±0.1 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage	Original	PDF	2SA0921 2SA921) 2SC1980 2SA0921 2SA921 2SC1980
2SA771 Abstract: 2SA770 Text: SavantIC Semiconductor Product Specification 2SA770 2SA771 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC1985/1986 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications PINNING	Original	PDF	2SA770 2SA771 O-220 2SC1985/1986 O-220) 2SA770 CollectSA771 2SA771
Untitled Abstract: No abstract text available Text: J.S.11EU cx \o duct i, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.S.A. 2SA771 Silicon PNP Power Transistor • DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEO= -80(V)(Min.) • Complement to Type 2SC1986	Original	PDF	2SA771 2SC1986 O-220C -25mA;
2SC2577 sanken Abstract: 2SC1619A SANKEN 2S0371 IOC3180 S1350 MJ041C 2S0334 2SC1445 2sc1030 hitachi IC-3180 Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 151-08SPC 2SC2577 B0243B B0295 B0295 2SCllll 2SCllll 2SC1445 ~~g~~~g 25 30 35 40 2SC1030 152-08SPC 2S0371 2S0334 S1350 2SC1986 2SC2485 IOC3180 2:iC3180 2SC1664A 2SC2316 2S084 2S0613 . 2S0613 2S0613 2S0613P	Original	PDF	BOT41BF SSP82B BOT41B TIP41B SPC152-08 2S0202 151-08SPC 2SC2577 2SC2577 sanken 2SC1619A SANKEN 2S0371 IOC3180 S1350 MJ041C 2S0334 2SC1445 2sc1030 hitachi IC-3180
Untitled Abstract: No abstract text available Text: Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit VCBO 120 V Collector-emitter voltage Base open	Original	PDF	2SC1980 2SA0921

2SA0921 Abstract: 2SC1980 Text: Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SA0921 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • High collector-emitter voltage Base open VCEO • Low noise voltage NV 0.7±0.2 • Features	Original	PDF	2SC1980 2SA0921 2SA0921 2SC1980
Untitled Abstract: No abstract text available Text: 2SC1985 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2SC1985 Freq10M
2SC1984 Abstract: No abstract text available Text: 2SC1984 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2SC1984 Freq15M
Untitled Abstract: No abstract text available Text: 2SC1981 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2SC1981 Freq30M
SK 18752 Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751 Text: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,	Original	PDF	O03ED0 dete7837 H1-O03ED0-0805020NM SK 18752 SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
2SD1039 Abstract: to-53 BUW64A Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220	Original	PDF	2SC1984 2N4233 2SB761A 2SB929A 2SB941A 2SD1252A 2SD1266A 2SD856A BDT31B 2SD1039 to-53 BUW64A
2SC1986 Abstract: No abstract text available Text: SANKEN ELECTRIC CO LT» 1 m 7 ^ 0 7 4 1 0DÜGSÖS 3SE D ^ S A K J "ESò-l^l Silicon PNP Epitaxial Planar ☆ Complement to types 2SC1985 thru 2SC1986 Application Exampfe : • Outline Drawing 1 •••■MT-25 TO220 • Test Circuit. . -■•	OCR Scan	PDF	2SC1985 2SC1986 MT-25 -25mA 2SA770 2SA771 60min 2SA771 80min 10typ 2SC1986
2SC1636 Abstract: 2SC1981 2sc163 2SC198 Text: 2SC1636 . Silicon NPN LEC Transistor S i— r - r v ^ - f y f , hFE 5 0 0 -2 0 0 0 • VCE „ . - 7 5 m V • Industrial Use: 2SC1981 (s) (Can Type) A bsolute M axim um Ratings T a = 25°C Characteristics Sym bol 2SC1636 Collector-to-Base Voltage	OCR Scan	PDF	0015mA 005mA 2SC1636 2SC1981 10ki2 2SC1636 2sc163 2SC198
sC4633 Abstract: 2sc1947 2sc1949 2SC1969 2sc1972 2sc1971 SC-4633 2SC1940 2SC1914A 2SC1913A Text: - 112 - <Ta=25‘C.*EP àïc=25<C m 2SC1913A 2SC1914A 2SC1921 2SC1922 2SC1923 2SC1924 2SC1925 2SC1926 2SC1927 2SC1929 2SC1941 2SC1942 2SC1944 2SC1945 2SC1946 2SC1946A 2SC1947 2SC1949 2SC1952 2SC1953 2SC1955 2SC1959 2SC1965 2SC1965A 2SC1966 2SC1967 2SC1968A	OCR Scan	PDF	2SC1913A 2SC1914A 2SC1921 2SC1922 2SC1923 2SC1924 2SC1925 2SC1955 2SA562TM O-92JÃ sC4633 2sc1947 2sc1949 2SC1969 2sc1972 2sc1971 SC-4633 2SC1940 2SC1913A
2SC137 Abstract: 2SC306 2SC138 2sc230 2SC458LG C 2SC130 2SC387AGTM 2SC238 2SC309 2SC132 Text: - 96 - m % T a = 2 5 ^ , * E P Í á T c = 2 5 eC M S 2SC27 € ffl & VcBO VcEO Ice DC) Pc Pc* (V) (V) (A) (W) (W) s± ii HF A 2SC130 S± ii HF A 60 1 1.8 2SC131 Ü± Ü HS SW 40 0.3 0. 35 2SC132 ä± ü HS SW 20 0.3 0.35 2SC134 S± ü HS SW 40 0.3 2SC135	OCR Scan	PDF	2SC27 2SC130 2SC131 2SC132 2SC134 2SC135 2SC136 30MHz T0-92ff5 2SC387AGTM 2SC137 2SC306 2SC138 2sc230 2SC458LG C 2SC130 2SC387AGTM 2SC238 2SC309

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2SC198 Price and Stock

Samsung Semiconductor 2SC1983

Sanken Electric Co Ltd 2SC1983

Sanken Electric Co Ltd 2SC1984

NEC Electronics Group 2SC1988

2SC198 Datasheets (131)

2SC198 Datasheets Context Search

Untitled

2SA0921

2SA0921

2SA770

2SA921

Untitled

Untitled

2SC1983

Untitled

2SA0921

2SA771

Untitled

2SC2577 sanken

Untitled

2SA0921

Untitled

2SC1984

Untitled

SK 18752

2SD1039

2SC1986

2SC1636

sC4633

2SC137