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    2SC336 Search Results

    2SC336 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC3360-T1B-A Renesas Electronics Corporation Small Signal Bipolar Transistors, MM, / Visit Renesas Electronics Corporation
    2SC3360(0)-T1B-A Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
    2SC3360-T2B-A Renesas Electronics Corporation Small Signal Bipolar Transistors, MM, / Visit Renesas Electronics Corporation
    2SC3360(0)-T1B-AT Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
    2SC3360(0)-T2B-A Renesas Electronics Corporation Small Signal Bipolar Transistors Visit Renesas Electronics Corporation
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    2SC336 Price and Stock

    Rochester Electronics LLC 2SC3361-6-TB-E

    NPN EPITAXIAL PLANAR SILICON
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    DigiKey 2SC3361-6-TB-E Bulk 1,567
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    Rochester Electronics LLC 2SC3361-5-TB-E

    BIP NPNP 0.15A 50V
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    DigiKey 2SC3361-5-TB-E Bulk 4,438
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    Rochester Electronics LLC 2SC3361-6-TB-E-ON

    NPN EPITAXIAL PLANAR SILICON
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    DigiKey 2SC3361-6-TB-E-ON Bulk 1,567
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    Aptina Imaging 2SC3361-5-TB-E

    Trans GP BJT NPN 50V 0.15A 150mW 3-Pin Case CP
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    Verical 2SC3361-5-TB-E 51,000 5,425
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    2SC3361-5-TB-E 18,000 5,425
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    Aptina Imaging 2SC3361-6-TB-E

    2SC3361-6-TB-E
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    Verical 2SC3361-6-TB-E 30,000 1,916
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    2SC336 Datasheets (77)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC336 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC336 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC336 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC336 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC336 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC336 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC336 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC3360 Kexin NPN Silicon Epitaxial Transistor Original PDF
    2SC3360 NEC Semiconductor Selection Guide 1995 Original PDF
    2SC3360 NEC Semiconductor Selection Guide Original PDF
    2SC3360 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3360 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3360 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3360 NEC HIGH VOLTAGE AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD Scan PDF
    2SC3360 NEC Silicon Transistor Scan PDF
    2SC3360-L NEC Silicon Transistor Scan PDF
    2SC3360N15 NEC High Voltage Amplifier and Switching NPN Silicon Epitaxial Transistor Mini Mold Scan PDF
    2SC3360N16 NEC High Voltage Amplifier and Switching NPN Silicon Epitaxial Transistor Mini Mold Scan PDF
    2SC3360N17 NEC High Voltage Amplifier and Switching NPN Silicon Epitaxial Transistor Mini Mold Scan PDF
    2SC3360-T1B NEC Silicon Transistor Scan PDF

    2SC336 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sc336

    Abstract: 2SC3365
    Text: Inchange Semiconductor Product Specification 2SC3365 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ,high speed APPLICATIONS ・For high speed and high power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


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    PDF 2SC3365 VCC150V 2sc336 2SC3365

    c04.2t

    Abstract: transistor 2SC3360 transistor 2T
    Text: データ・シート シリコン・トランジスタ Silicon Transistor 2SC3360 NPN エピタキシアル形シリコントランジスタ 高耐圧増幅およびスイッチング用 ★ ★ 本資料の内容は,予告なく変更することがありますので,最新のものであることをご確認の上ご使用ください。


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    PDF 2SC3360 D17874JJ2V0DS00 TC-5786 D17874JJ2V0DS M8E02 c04.2t transistor 2SC3360 transistor 2T

    Untitled

    Abstract: No abstract text available
    Text: 2SC3365 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400ö V(BR)CBO (V)500 I(C) Max. (A)10 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2SC3365

    Untitled

    Abstract: No abstract text available
    Text: 2SC3369 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)16 V(BR)CBO (V)25 I(C) Max. (A)300 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)30u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2SC3369

    SMD IC S6

    Abstract: MARKING S6 SMD MARKING s6 2SC3361
    Text: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistors 2SC3361 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High breakdown voltage. 1 0.55 Fast switching speed. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


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    PDF 2SC3361 OT-23 SMD IC S6 MARKING S6 SMD MARKING s6 2SC3361

    smd transistor n17

    Abstract: transistor SMD n17 n17 smd SMD Marking n17 marking N15 n17 transistor 2SC3360 smd marking n16
    Text: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC3360 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 High voltage VCEO=200V +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain.hFE=90 to 450 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


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    PDF 2SC3360 OT-23 -10mA smd transistor n17 transistor SMD n17 n17 smd SMD Marking n17 marking N15 n17 transistor 2SC3360 smd marking n16

    Hitachi DSA002787

    Abstract: No abstract text available
    Text: 2SC3365 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector Flange 3. Emitter 1 2 3 2SC3365 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage


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    PDF 2SC3365 D-85622 Hitachi DSA002787

    2sc336

    Abstract: 2SC3365 DSA003644
    Text: 2SC3365 Silicon NPN Triple Diffused ADE-208-892 Z 1st. Edition Sep. 2000 Application High voltage, high speed and high power switching Outline TO-3P 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 2SC3365 Absolute Maximum Ratings (Ta = 25°C) Item Symbol


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    PDF 2SC3365 ADE-208-892 2sc336 2SC3365 DSA003644

    2SC3360

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC3360 HIGH VOLTAGE AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD <R> The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.


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    PDF 2SC3360 D17874EJ2V0DS00 TC-1643) 2SC3360

    Untitled

    Abstract: No abstract text available
    Text: 2SC3368 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)16 I(C) Max. (A)100m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2SC3368

    2SA1331

    Abstract: 2SC3361 EN3217
    Text: Ordering number:EN3217 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1331/2SC3361 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · High breakdown voltage. · Small-sized package permitting the 2SA1331/ 2SC3361-applied sets to be made small and slim.


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    PDF EN3217 2SA1331/2SC3361 2SA1331/ 2SC3361-applied 2SA1331/2SC3361] 2SA1331 2SA1331 2SC3361 EN3217

    Hitachi DSA002755

    Abstract: No abstract text available
    Text: 2SC3365 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline 2SC3365 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage


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    PDF 2SC3365 Hitachi DSA002755

    2SC3303 to-251

    Abstract: 2S0586 2SC3303 2N4306 bo 913 bur10 SML1634
    Text: POWER SILICON NPN Item Part Number Number I C 5 -10 15 -20 25 30 35 40 45 -50 ~ BUR10 BUR10 BUR10 SVTSO-5 SVTSO-5 SVTBO-5 2N2SS0 2N4113 2N4115 2N4306 2N4309 2SC520 2N1725 2N3S50 SOT5636 SOT63S3 2N2S93 2N5326 "~""";JIOI'\L. 55 - -60 2SC3367 2S0961 2N5337


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    PDF O-l11 O-220AB O-220 O-220var O-251 2SC3303 to-251 2S0586 2SC3303 2N4306 bo 913 bur10 SML1634

    2SC3361

    Abstract: ITR03244 2SA1331 ITR03231 ITR03232
    Text: 注文コード No.N 3 2 1 7 2SA1331 / 2SC3361 No. N3217 N0899 半導体ニューズ No.1341, 1342 ’ 87-88 データブック 個別半導体素子トランジスタ編 No.1341A, 1342A とさしかえてください。 2SA1331 / 2SC3361 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ


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    PDF 2SA1331 2SC3361 N3217 N0899 2SA1331 ITR03241 ITR03242 2SC3361 ITR03244 ITR03231 ITR03232

    Untitled

    Abstract: No abstract text available
    Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SA1330 HIGH VOLTAGE AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FE A TU R ES • High Voltage: V c e o = —200 V • High DC C u rrent Gain: hpE = 90 to 450 • C om plem entary to 2SC3360 A B S O LU T E M A X IM U M R A T IN G S


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    PDF 2SA1330 2SC3360

    2SC3368

    Abstract: 2SC3356 to 92 2sc3325 cross 2SC3356 2SC3358 2SC3369 2SA1317 2SC3371 2sa131 2SC3331
    Text: - 154 - Ta=25t . *EP(äTc=25iC) 2SC3322 2SC3324 2SC3325 2SC3326 2SC3327 2SC3328 2SC3329 2SC3330 2SC3331 2SC3332 2SC3333 2SC3334 2SC3336 2SC3337 2SC3338 2SC3342 2SC3345 2SC3346 2SC3352 2SC3352A 2SC3353 2SC3353A 2SC3354 2SC3355 2SC3356 2SC3357 2SC3358 2SC3360


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    PDF 2SC3322 2SC3324 2SC3325 2SC3326 2SC3327 2SC3328 2SC3329 00MHz 2SC3354 O-92JÃ 2SC3368 2SC3356 to 92 2sc3325 cross 2SC3356 2SC3358 2SC3369 2SA1317 2SC3371 2sa131 2SC3331

    IC LA 3361

    Abstract: AN713 S904 ic 3361
    Text: Ordering number : EN 3217 2SA1331/2SC3361 N o .3 2 1 7 P N P /N P N E p ita x ia l P la n a r S ilic o n T r a n sisto r s High-Speed Switching Applications F e a tu r e s • F a st sw itc h in g sp eed • H ig h b rea k d o w n v o lta g e • S m a ll-siz e d p a c k a g e p e r m ittin g th e 2 S A 1 3 3 1 /2 S C 3 3 6 1 -a p p lie d s e t s to be m ad e sm a ll an d slim


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    PDF 2SA1331/2SC3361 IC LA 3361 AN713 S904 ic 3361

    2SC3369

    Abstract: No abstract text available
    Text: 2SC3369 2SC3369 '>ij 3 > NPN x ¿IrìsT i P o w e r NPN Epitaxial Planar — Amplifier • # iü/Features • 41di t} 'C’&£>0/M iddle power output • iSiflJifT-'^&o/High gain ■ Absolute Maximum Ratings Ta = 25°C 17 U 9 9 • J3L = -y Symbol V CEO


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    PDF 2SC3369 Ta-25Â 14/Electrical 100mA 700XH 10juF/50V 2SC3369

    2SC3365

    Abstract: No abstract text available
    Text: HITACHI 2SC3365 SIL IC O N NPN T R IP L E D IF F U S E D HIGH VO LTAG E, HIGH S P E E D AN D HIGH P O W E R SW IT C H IN G lixforux f ' 5 rl • v riV rr Ü 1 j wi < 1 SOmix 3 1 3 H M t 1. Rust 2 Cdillocmr Flange 2. tm iu cr (Dim ensions in mm) Tp* ö l


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    PDF 2SC3365 2SC3365

    marking IAY

    Abstract: 2SC3360 S200 SRS-200 2 fy
    Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC3360 HIGH VOLTAGE AMPLIFIER AND SW ITCHING NPN SILICON EPITAXIAL TRANSISTOR M INI MOLD FEATURES P A C K A G E D IM E N S IO N S in millimeters 2.8±0.2 -8 00 +1 «* • High Voltage V CEo = 20 0 V • High DC Current Gain hpE = 9 0 to 4 5 0


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    PDF 2SC3360 2SA1330 J22686 marking IAY 2SC3360 S200 SRS-200 2 fy

    2SC2553

    Abstract: 2SC1845 2SC3531 2SC3536 2SC2829 2SC2837 2sc2362 2SC2389 2sc3040 2SC3358
    Text: - 148 - m % tt Type No. £ Man iif. ÏÏWjt 2SC 2828 # h SANYO ^ te T fâ T 2SC 2832 4? te T 2SC 2832A te T 2SC 2833 ^ te T 2SC 2833A te T ✓ 2SC 2834A 2SC 2837 te T te T 2SC30S6 2SC3Û87 2SC3089 ± M. F U JIT S U te T MATSUSHITA 2SC3365 2SC2740 2SC3365 2SC2740


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    PDF 2SC2828 2SC2829 2SC2830 2SC2831 2SC3277 2SC2139 2SC2751 2SC3365 2SC2820 2SC2553 2SC1845 2SC3531 2SC3536 2SC2837 2sc2362 2SC2389 2sc3040 2SC3358

    NEC 2561

    Abstract: NEC 2581 nec 2565 2565 nec 2SC2564 2SC2320 NEC 2562 2581 NEC 2561 nec 2SC237
    Text: - 3 . n SANYO m ±L H IT A C H I □ — h. tt 2SC 2552 ^ 3fC S 2SC3038 2SC2333 ¿5b¿Oi¿ 2SC2738 2SC3968 2SC 2 553 / & 2SC3039 2SC2335 2SC2613 2SC2739 2SC4205 2SC2749 2SC3365 2SC2841 € TO SH IBA 2SC 2 5 5 5 " - ' NEC 2SC 2556-.- tó T 2SA505 2SC2690 2SC 2557


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    PDF 2SC3038 2SC2333 2SC2738 2SC3968 2SC3039 2SC2335 2SC2613 2SC2739 2SC4205 2SC2749 NEC 2561 NEC 2581 nec 2565 2565 nec 2SC2564 2SC2320 NEC 2562 2581 NEC 2561 nec 2SC237

    2SA331

    Abstract: 2SA1331 2SC3361 R25U 3361a C3361 2018a
    Text: Ordering number:EN 3217 2SA1331/2SC3361 No.3217 PN P/N PN E pitaxial P la n ar Silicon T ransistors SAMVO i High-Speed Switching Applications Features •F a st sw itching speed • High breakdow n voltage • Sm all-sized package p erm ittin g the 2SA1331/2SC3361-applied sets to be made small and slim


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    PDF 2SA1331/2SC3361 2SA1331/2SC3361-applied 2SA1331 2SA331 2SC3361 R25U 3361a C3361 2018a

    8115, transistor

    Abstract: TFK03 2SC3360 T108
    Text: NEC j '> U =1 > h i> J* ^ T r a n s is t o r = 7 > S ilic o n 2SC3360 N P N x t °^ + '> 7 ; P i'> ¡ Ü I Î / ± ± i ifs «fc * U =3 > h ^ -r -y ^ V X ^ NPN Epitaxial Silicon Transistor High Voltage Amplifier and Switching ^ B U / P A C K A G E DIMENSIONS


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    PDF 2SA13301 CycleS50 8115, transistor TFK03 2SC3360 T108