2SC5111FT
Abstract: No abstract text available
Text: 2SC5111FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111FT For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage
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2SC5111
Abstract: No abstract text available
Text: 2SC5111 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5111 単位: mm ○ VHF~UHF 発振用 絶対最大定格 Ta = 25°C 項 目 記 号 定 格 単位 コ レ ク タ ･ ベ ー ス 間 電 圧 VCBO 20 V コ レ ク タ ･ エ ミ ッ タ 間 電 圧
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2SC5111
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2SC5111
Abstract: No abstract text available
Text: 2SC5111 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111 For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage
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2SC5111
2SC5111
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2SC5111
Abstract: No abstract text available
Text: 2SC5111 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111 For VCO Application Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO
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2SC5111
2SC5111
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Abstract: No abstract text available
Text: 2SC5111 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111 For VCO Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage
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2SC5111
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2SC5111FT
Abstract: No abstract text available
Text: 2SC5111FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111FT For VCO Application Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage
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2SC5111FT
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IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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SCJ0004R
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
IGBT GT30F124
IGBT GT30J124
GT30F124
GT30J124
GT50N322
tk25e06k3
TPCP8R01
TK12A10K3
GT30G124
2SK3075
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RFM70U12D
Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Text: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック
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SCJ0004N
2SC2714
2SC2715
2SC2716
2SC3123
2SC5064
2SC5084
2SC5089
2SC5094
2SC5106
RFM70U12D
2SC3136
rfm03u3ct
2SK709
RFM70U12
MT3S106
MT3S111
MT3S111P
tim4450
tpm1919
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JDV2S31CT
Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。
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BCJ0003F
BCJ0003E
JDV2S31CT
1SV283B
1SV271
2SK1875
2sk3476
1SV128
1SV307
1SV308
DCS1800
IMT-2000
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2sc5108
Abstract: toshiba transistors catalog 2sk3476 UHF/VHF IC transceiver 2SK403 microwave Duplexer Am tuning varicap Wideband MMIC VCO covers 8 GHz to 12.5 GHz 2Sk3656 microwave transceiver 3.54 GHz
Text: 2009-9 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors,
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BCE0003E
2sc5108
toshiba transistors catalog
2sk3476
UHF/VHF IC transceiver
2SK403
microwave Duplexer
Am tuning varicap
Wideband MMIC VCO covers 8 GHz to 12.5 GHz
2Sk3656
microwave transceiver 3.54 GHz
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sec 2sc5088
Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and
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BCE0003D
S-167
BCE0003E
sec 2sc5088
samsung UHF/VHF TV Tuner
2SC5066 datasheet
RF Bipolar Transistor
transistor 2SC5066
2SC5088 SEC
MT6L04AE
MT4S200T
AU82
MT6L63FS
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2SC5111
Abstract: No abstract text available
Text: 2SC5111 TOSHIBA 2 S C 5 1 11 T O S H IB A TRA N SIST O R FOR VCO A PPLIC A TIO N SILICON NPN EPIT A X IA L PLA N A R TYPE Unit in mm M A X IM U M RATING S Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current
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2SC5111
2SC5111
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2SC5111
Abstract: No abstract text available
Text: 2SC5111 TO SH IBA TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 11 Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current
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2SC5111
2SC5111
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Untitled
Abstract: No abstract text available
Text: 2SC5111 FT TO SHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 11 FT FOR VCO APPLICATION U n it in mm 1.2 ± 0 .0 5 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current
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2SC5111
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2SC5111F
Abstract: No abstract text available
Text: 2SC5111F TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5111F Unit in mm FOR VCO APPLICATION 1.6 ± 0.1 0.85 ±0.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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2SC5111F
2SC5111F
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Untitled
Abstract: No abstract text available
Text: 2SC5111 TOSHIBA TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 11 Unit in mm r0.8 ,0.1-i ± MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current
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2SC5111
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sp 0631
Abstract: TE 2556
Text: 2SC5111 TOSHIBA nrsm TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE wêêêf FOR VCO APPLICATION a r • ■ ■ U n it in mm 1.6 ±0.2 .0810.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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2SC5111
sp 0631
TE 2556
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Untitled
Abstract: No abstract text available
Text: 2SC5111F TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE ? s r R 111 F FOR VCO APPLICATION MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current
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2SC5111F
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Untitled
Abstract: No abstract text available
Text: 2SC5111 T O SH IB A TOSHIBA TRANSISTOR 2 SILICON NPN EPITAXIAL PLANAR TYPE S C 5 1 11 Unit in mm FOR VCO APPLICATION M A X I M U M RATINGS Ta = ?S°Cl CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current
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2SC5111
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Untitled
Abstract: No abstract text available
Text: 2SC5111 T O SH IB A TOSHIBA TRANSISTOR FOR VCO APPLICATION SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 11 Unit in mm 1.6 ± 0.2 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage Base Current Collector Current
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2SC5111
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Untitled
Abstract: No abstract text available
Text: 2SC5111F TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5111F Unit in mm FOR VCO APPLICATION 1.6 ± 0.1 0.85 ±0.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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2SC5111F
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2SC5111
Abstract: No abstract text available
Text: TO SH IBA 2SC5111 FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 11 FT Unit in mm FOR VCO APPLICATION 1.2 ± 0.05 0.8 ± 0.05 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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2SC5111
0022g
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2 S C 5 1 11 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 5 1 11 FOR VCO APPLICATION M A X IM U M RATINGS ÍTa = 2 5 ° 0 U n i t in m m „ i.6 ±o.2 . ”3 fO H Ä> c ts 3 o «! |S21el TRANSITION FREQUENCY dB fT (GHz) DC CURRENT GAIN
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2SC5111
S21el
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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