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    2SC5949 Search Results

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    2SC5949 Price and Stock

    EVVO Semiconductor 2SC5949

    TRANS NPN 200V 15A TO-3PL
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    Toshiba America Electronic Components 2SC5949-O(Q)

    Trans GP BJT NPN 200V 15A 3-Pin(3+Tab) TO-3PL - Trays (Alt: 2SC5949-O(Q))
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    Toshiba America Electronic Components 2SC5949

    Bipolar Transistors - BJT
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    Toshiba America Electronic Components 2SC5949R(Q)

    TRANSISTOR
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    Quest Components 2SC5949R(Q) 66
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    2SC5949 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5949 Toshiba Transistor Silicon NPN Triple Diffused Type Original PDF
    2SC5949-O Toshiba 2SC5949 - TRANSISTOR 15 A, 200 V, PNP, Si, POWER TRANSISTOR, LEAD FREE, 2-21F1A, 3 PIN, BIP General Purpose Power Original PDF
    2SC5949-O(Q) Toshiba 2SC5949 - Bipolar Transistors Transistor NPN 200V 15A Original PDF
    2SC5949-R Toshiba 2SC5949 - TRANSISTOR 15 A, 200 V, PNP, Si, POWER TRANSISTOR, LEAD FREE, 2-21F1A, 3 PIN, BIP General Purpose Power Original PDF
    2SC5949-R(Q) Toshiba 2SC5949 - Trans GP BJT NPN 200V 15A 3-Pin TO-3PL Original PDF

    2SC5949 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA2121 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2121 Power Amplifier Applications Unit: mm Complementary to 2SC5949 Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit


    Original     		2SA2121 2SC5949 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA2121 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2121 Power Amplifier Applications Unit: mm PC = 220W Complementary to 2SC5949 Maximum Ratings Tc = 25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO −200 V Collector-emitter voltage


    Original     		2SA2121 2SC5949 2-21F1A PDF

    2sc5949

    Abstract: 2-21F1A 2SA2121
    Text: 2SC5949 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5949 Power Amplifier Applications • PC = 220W • Complementary to 2SA2121 Unit: mm Maximum Ratings Tc = 25°C Characteristic Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage


    Original     		2SC5949 2SA2121 2-21F1A 2sc5949 2-21F1A 2SA2121 PDF

    2sc5949

    Abstract: 2SA2121 2-21F1A
    Text: 2SC5949 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5949 Power Amplifier Applications Unit: mm • Complementary to 2SA2121 • Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings Tc = 25°C Characteristic Symbol Rating


    Original     		2SC5949 2SA2121 2sc5949 2SA2121 2-21F1A PDF

    2SC5949

    Abstract: 2-21F1A 2SA2121
    Text: 2SC5949 東芝トランジスタ シリコンNPN三重拡散形 2SC5949 ○ 電力増幅用 単位: mm • 2SA2121 とコンプリメンタリになります。 • オーディオアンプ出力段に最適です。 絶対最大定格 Tc = 25°C 項 目


    Original     		2SC5949 2SA2121 2-21F1A 20070701-JA 2SC5949 2-21F1A 2SA2121 PDF

    2-21F1A

    Abstract: 2SA2121 2SC5949
    Text: 2SA2121 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2121 Power Amplifier Applications Unit: mm z Complementary to 2SC5949 z Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating


    Original     		2SA2121 2SC5949 2-21F1A 2SA2121 2SC5949 PDF

    2SA2121

    Abstract: 2SC5949 2-21F1A
    Text: 2SA2121 東芝トランジスタ シリコンPNP三重拡散形 2SA2121 ○ 電力増幅用 単位: mm • 2SC5949 とコンプリメンタリになります。 • オーディオアンプ出力段に最適です。 絶対最大定格 Tc = 25°C 項 目


    Original     		2SA2121 2SC5949 2-21F1A 20070701-JA 2SA2121 2SC5949 2-21F1A PDF

    2SA21

    Abstract: 2-21F1A 2SA2121 2SC5949
    Text: 2SC5949 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5949 Power Amplifier Applications Unit: mm • Complementary to 2SA2121 • Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings Tc = 25°C Characteristic Symbol Rating


    Original     		2SC5949 2SA2121 2SA21 2-21F1A 2SA2121 2SC5949 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA2121 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2121 Power Amplifier Applications Unit: mm z Complementary to 2SC5949 z Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating


    Original     		2SA2121 2SC5949 PDF

    2SA2121

    Abstract: toshiba audio power amplifier 2-21F1A 2SC5949 IC2550
    Text: 2SA2121 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2121 Power Amplifier Applications Unit: mm z Complementary to 2SC5949 z Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings Tc = 25°C Characteristic Symbol Rating


    Original     		2SA2121 2SC5949 2SA2121 toshiba audio power amplifier 2-21F1A 2SC5949 IC2550 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA2121 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2121 Power Amplifier Applications Unit: mm z Complementary to 2SC5949 z Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings Tc = 25°C Characteristic Symbol Rating


    Original     		2SA2121 2SC5949 PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 PDF

    TC94A70FG

    Abstract: TC90507XBG TMPA8873 tb1307fg TC90512XBG TB1318FG tb2926hq Toshiba TMPA8873 TB2926 TC90507
    Text: システムカタログ 2008-9 システムカタログ 東芝半導体 ○○○○○○編 アプリケーションガイ ド s e m i c o n d u c t o r h t tp://w w w.se micon.tosh iba.co.jp/ さまざまなアプリケーションごとに東芝の半導体製品をご紹介します。


    Original     		TB7004FL TB6814LG TC7705FNG SCJ0015C SCJ0015B TC94A70FG TC90507XBG TMPA8873 tb1307fg TC90512XBG TB1318FG tb2926hq Toshiba TMPA8873 TB2926 TC90507 PDF

    Untitled

    Abstract: No abstract text available
    Text: I S.IIS.L , Line. Cx TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA2121 DESCRIPTION • High Current Capability • High Power Dissipation PIN 1.BASE • High Collector-Emitter Breakdown Voltage-


    Original     		2SA2121 -200V 2SC5949 -50mA -200V PDF

    2sC5200, 2SA1943

    Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
    Text: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4


    Original     		TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N PDF

    2SC4793 2sa1837

    Abstract: 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303
    Text: Part Number 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC3421 2SA1358 2SC2983 2SA1225 2SC4793 2SA1837 2SC5171 2SA1930 2SC5196 2SA1939 2SC5197 2SA1940 2SC5198 2SA1941 2SD2386 2SB1557 2SD2387 2SB1558 2SD2636 2SB1682 2SC4688


    Original     		2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC4793 2sa1837 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303 PDF

    2SC2625

    Abstract: power transistor 2sc2625 datasheet 2SC5000 2SA793 2sc2335 2sc2625 equivalent 2SC1116A 2SC2306 2SC2829 2sb600
    Text: STI Type: 2C5000 Industry Type: 2C5000 V CEO: ICBO ICEX: h FE: IC: V CE: Case Style: STI Type: 2N2453DIE Industry Type: 2C2453 V CEO: 30 ICBO ICEX: h FE: 150 IC: 1.0m V CE: Case Style: STI Type: 2N3807DIE Industry Type: 2C3807 V CEO: 60 ICBO ICEX: h FE: 300


    Original     		2C5000 2N2453DIE 2C2453 2N3807DIE 2C3807 2N6287DIE 2C6287 2N6295DIE 2C6295 2SC2625 power transistor 2sc2625 datasheet 2SC5000 2SA793 2sc2335 2sc2625 equivalent 2SC1116A 2SC2306 2SC2829 2sb600 PDF

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 PDF

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram PDF