rca 101m
Abstract: Delco 2N1522 2n1543 2n1518 2n1564 2SC968 2N1553 2n1457 ED-1402
Text: LOW-POWER SILICON NPN Item Number Part Number 10 20 BC232 ZTX223 TP4384 ZTX330 BFY68 BFY68 TP5449 2MC509 ~~g~g~ 25 30 MPS3704 BSY54 2222 PN5449 2N4383 2N4384 A8T3704 2N5449 ~~~!~~U 35 40 TED1702K 2SC352A ED1402A BC848A D4C31 4C31 ZTX238 TD101 ~g~g~tA 45 50
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2SC458K
2N3856A
BC383L
MPS3707
BC223A
BC232A
BC223
rca 101m
Delco
2N1522
2n1543
2n1518
2n1564
2SC968
2N1553
2n1457
ED-1402
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BC232A
Abstract: PN544 2SC9410 TD-101 SA2716 LOW-POWER SILICON NPN ZTX223 NA31XH TD101 2MC509
Text: LOW-POWER SILICON NPN Item Number Part Number 10 20 BC232 ZTX223 TP4384 ZTX330 BFY68 BFY68 TP5449 2MC509 ~~g~g~ 25 30 MPS3704 BSY54 2222 PN5449 2N4383 2N4384 A8T3704 2N5449 ~~~!~~U 35 40 TED1702K 2SC352A ED1402A BC848A D4C31 4C31 ZTX238 TD101 ~g~g~tA 45 50
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2SC458K
2N3856A
BC383L
MPS3707
BC223A
BC232A
BC223
52var
PN544
2SC9410
TD-101
SA2716
LOW-POWER SILICON NPN
ZTX223
NA31XH
TD101
2MC509
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2SC941
Abstract: 2SC9410 2SC941-0 2SC941-R 2SC941-Y Produced by Perfect Crystal Device Technology
Text: 2 / U D > N P N X t :^ ^ 3 / ? J l/ » h 5 > ^ 9 P C T ^ ÌE 2 s c 941 u Am xm m m O AM | O AM , ^ IL IC O N NPN EPITAXIAL TRANSISTOR (PCT PROCESS) High Frequency Amplifier, AM RF Amplifier and AM Frequency Converter Applications. NF = 3.5dB (Max.) (f=lMHz)
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Ta-25
2SC941
2SC9410
2SC941-0
2SC941-R
2SC941-Y
Produced by Perfect Crystal Device Technology
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2SC941TM
Abstract: 2SC941-0 2SC941-R 2SC941-Y
Text: TO SH IBA 2SC941TM TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC941TM HIGH FREQUENCY AMPLIFIER APPLICATIONS Unit in mm AM HIGH FREQUENCY AMPLIFIER APPLICATIONS 5 1 M AX AM FREQUENCY CONVERTER APPLICATIONS • Low Noise Figure : NF = 3.5dB (Max.) (f = 1 MHz)
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2SC941TM
SC-43
2SC941TM
2SC941-0
2SC941-R
2SC941-Y
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70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
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2SA1162
2SA1163
2SC1815
2SA1015
2SC2458
2SC2459
2SA1048
2SA1049
2SC2712
2SC2713
70H40
transistor equivalent d2012
2SC734 equivalent
3sk73 equivalent
2sb502
2sa776 bl
2sc2075 equivalent
2sk For Low Noise Audio Amplifier Applications
2sa970 BL equivalent
2sa776 gr
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2SC941TM
Abstract: 2SC941-Y 2SC941-0 2SC941-R 2SC9410 2sc941
Text: TOSHIBA 2SC941TM TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC941TM Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM FREQUENCY CONVERTER APPLICATIONS. Low Noise Figure : NF = 3.5dB (Max.) (f=lMHz)
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2SC941TM
2SC941TM
2SC941-Y
2SC941-0
2SC941-R
2SC9410
2sc941
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2SC941TM
Abstract: No abstract text available
Text: TOSHIBA 2SC941TM 2SC941TM TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS. AM HIGH FREQUENCY AM PLIFIER APPLICATIONS. AM FREQUENCY CONVERTER APPLICATIONS. • Low Noise Figure : NF = 3.5dB (Max.) (f=lMHz)
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2SC941TM
2SC941TM
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EM 257
Abstract: 2SC941 2SC941TM 2SC941-Y 2SC9410
Text: SILICON NPN EPITAXIAL TYPE TRANSISTOR H IG H FREQU ENCY AMPLIFIE R APPLICATIONS. CHARACTERISTIC Collector Cut-off C urrent Em itter Cut-off C urrent DC C urrent Gain Collector-Emitter Saturation Voltage Base-Em itter Saturation Voltage Transition Frequency
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2SC941TM
EM 257
2SC941
2SC941TM
2SC941-Y
2SC9410
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2sc941
Abstract: 2SC941TM
Text: TOSHIBA 2SC941TM TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM HIGH FREQUENCY AMPLIFIER APPLICATIONS. AM FREQUENCY CONVERTER APPLICATIONS. • Unit in mm Low Noise Figure : NF = 3.5dB (Max.) (f= 1MHz)
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2SC941TM
2sc941
2SC941TM
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