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    2SD1616A Search Results

    2SD1616A Result Highlights (2)

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    2SD1616A-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
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    2SD1616A Price and Stock

    Rochester Electronics LLC 2SD1616A-T-AZ

    NPN TRANSISTOR
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    DigiKey 2SD1616A-T-AZ Bulk 1,015
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    Renesas Electronics Corporation 2SD1616A-T-AZ

    Trans GP BJT NPN 60V 1A 750mW 3-Pin TO-92
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    Verical 2SD1616A-T-AZ 709,500 1,242
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    2SD1616A-T-AZ 39,700 1,242
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    Rochester Electronics 2SD1616A-T-AZ 749,200 1
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    Luguang Electronic Technology Co Ltd 2SD1616A

    Transistor: NPN; bipolar; 60V; 1A; TO92
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    TME 2SD1616A 10
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    2SD1616A Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1616A Micro Electronics NPN SILICON TRANSISTOR Original PDF
    2SD1616A NEC Semiconductor Selection Guide 1995 Original PDF
    2SD1616A NEC Semiconductor Selection Guide Original PDF
    2SD1616A NEC NPN SILICON EPITAXIAL TRANSISTOR Original PDF
    2SD1616A Unisonic Technologies NPN EPITAXIAL SILICON TRANSISTOR Original PDF
    2SD1616A Weitron NPN Transistors Original PDF
    2SD1616A Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1616A Unknown Scan PDF
    2SD1616A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1616A Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1616A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1616A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1616A NEC NPN SILICON TRANSISTORS Scan PDF
    2SD1616A USHA Transistor. Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 1A. Scan PDF
    2SD1616A/JD NEC Silicon Transistor Original PDF
    2SD1616A/JM NEC Silicon Transistor Original PDF
    2SD1616AK NEC NPN Silicon Transistor Scan PDF
    2SD1616AL Sanyo Semiconductor Low-Voltage High-Current Amplifier, Muting Applications Original PDF
    2SD1616AL NEC NPN Silicon Transistor Scan PDF
    2SD1616A-T NEC Silicon Transistor Original PDF

    2SD1616A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cross reference ic

    Abstract: 2SD1616A
    Text: DC COMPONENTS CO., LTD. 2SD1616A DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency power amplifier and medium-speed switching applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter


    Original     		PDF 2SD1616A 100mA, cross reference ic 2SD1616A

    utc d1616a

    Abstract: D1616A d1616 transistor d1616a TRANSISTOR D1616
    Text: UNISONIC TECHNOLOGIES CO., 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1 TO-92 *Pb-free plating product number: 2SD1616L/2SD1616AL PIN CONFIGURATION PIN NO.


    Original     		PDF 2SD1616/A 2SD1616L/2SD1616AL 2SD1616-T92-B 2SD1616L-T92-B 2SD1616-T92-K 2SD1616L-T92-K 2SD1616A-T92-B 2SD1616AL-T92-B 2SD1616A-T92-K 2SD1616AL-T92-K utc d1616a D1616A d1616 transistor d1616a TRANSISTOR D1616

    2SB1116A

    Abstract: 2SB1116AK 2SD1616A 2sb1116-al 2SB1116AL 2SD1616A-G 2SD1616AG
    Text: 2SB1116A -1 A, -80 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High Collector Power Dissipation Complementary to 2SD1616A G H 1Emitter 2Collector 3Base


    Original     		PDF 2SB1116A 2SD1616A 2SB1116A-L 2SB1116A-K 2SB1116A-U 21-Jan-2011 2SB1116A 2SB1116AK 2SD1616A 2sb1116-al 2SB1116AL 2SD1616A-G 2SD1616AG

    2SD1616A

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SD1616A TO-92 TRANSISTOR NPN FEATURE Power dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 3. BSAE Symbol Parameter Value Units


    Original     		PDF 2SD1616A to150 100mA 100mA, PW350 2SD1616A

    2SD1616

    Abstract: 2SD16116 2SD1616A 2sd1616 datasheet
    Text: 2SD1616 2SD1616A NPN Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC 2SD16116 50 60 2SD1616A


    Original     		PDF 2SD1616 2SD1616A 2SD16116 2SD1616 2SD16116 2SD1616A 2sd1616 datasheet

    2SD1616A

    Abstract: transistor 468
    Text: ELECTRONICS MICRO DESCRIPTION 2SD1616A is NPN silicon planar transistor designed for use in driver and output stages of AF amplifier, general purpose application. 2SD1616A NPN SILICON TRANSISTOR 4.68 0.18 TO-92B 4.6 (0.18) 12.7 (0.5) min. 3.58 B CE (0.14)


    Original     		PDF 2SD1616A 2SD1616A O-92B 150oC 100mA transistor 468

    2SD1616

    Abstract: 2SD1616A
    Text: ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be


    Original     		PDF 2SD1616 2SD1616A 2SD1616A 2SD1616 100mA 0V/120V

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SB1116/1116A TO-92 TRANSISTOR PNP 1. EMITTER FEATURES • High Collector Power Dissipation . · Complementary to 2SD1616/2SD1616A 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF 2SB1116/1116A 2SD1616/2SD1616A 2SB1116 2SB1116A -50mA

    2SD1616A

    Abstract: 2SD1616AL B200A 2SD1616 2sd1616l-x-t9s-k B300A 2SD1616AL TO-92
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1616/A NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 1 SOT-89 DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1 TO-92 1 SIP-3 1 TO-92SP *Pb-free plating product number: 2SD1616L/2SD1616AL ORDERING INFORMATION


    Original     		PDF 2SD1616/A OT-89 O-92SP 2SD1616L/2SD1616AL 2SD1616-x-AB3-R 2SD1616L-x-AB3-R 2SD1616-x-G03-K 2SD1616L-x-G03-K 2SD1616-x-T92-B 2SD1616L-x-T92-B 2SD1616A 2SD1616AL B200A 2SD1616 2sd1616l-x-t9s-k B300A 2SD1616AL TO-92

    2SD1616

    Abstract: 2SD1616A
    Text: ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be


    Original     		PDF 2SD1616 2SD1616A 2SD1616A 2SD1616 0V/120V -100mA

    2SD1616A

    Abstract: No abstract text available
    Text: 2SD1616A 2SD1616A TRANSISTOR NPN TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 1 A Collector-base voltage 120 V V(BR)CBO: Operating and storage junction temperature range 3. BSAE 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2SD1616A 100mA 100mA, PW350 2SD1616A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTORS 2SD1616, 2SD1616A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility


    Original     		PDF 2SD1616, 2SD1616A 2SB1116 2SD1616

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SD1616A TRANSISTOR（ NPN ） TO—92 FEATURE Power dissipation PCM： 0.75 W（Tamb=25℃） Collector current ICM： 1 A Collector-base voltage V BR CBO： 120 V Operating and storage junction temperature range


    Original     		PDF 2SD1616A 270TYP 050TYP

    1116a

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTORS 2SD1616, 2SD1616A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility


    Original     		PDF 2SD1616, 2SD1616A 2SB1116 2SD1616 1116a

    2SB1116

    Abstract: 2SB1116A
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SB1116/1116A TRANSISTOR PNP TO-92 FEATURES • High Collector Power Dissipation . · Complementary to 2SD1616/2SD1616A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 2SB1116/1116A 2SD1616/2SD1616A 2SB1116 2SB1116A -50mA 2SB1116/2SB1116A 2SB1116 2SB1116A

    2sb1116

    Abstract: 1116a
    Text: 2SB1116/1116A PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High Collector Power Dissipation . Complementary to 2SD1616/2SD1616A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value VEBO Emitter-Base Voltage


    Original     		PDF 2SB1116/1116A 2SD1616/2SD1616A 2SB1116 2SB1116A 1116a

    2SD1616

    Abstract: 2sd1616 datasheet 2sd1616a
    Text: ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be


    Original     		PDF 2SD1616 2SD1616A 2SD1616A 2SD1616 100mA 0V/120V 2sd1616 datasheet

    2SD1616

    Abstract: No abstract text available
    Text: 2SD1616 2SD1616A NPN Transistors TO-92 * “G” Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC


    Original     		PDF 2SD1616 2SD1616A 2SD16116 2SD1616

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SD1616A TRANSISTOR NPN TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current 1 A ICM: Collector-base voltage 120 V V(BR)CBO:


    Original     		PDF 2SD1616A 100mA 100mA,

    Untitled

    Abstract: No abstract text available
    Text: 2SD1616A NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO


    Original     		PDF 2SD1616A to150 PW350 100mA, 100mA 100mA

    2SD1616

    Abstract: 2SD1616A
    Text: ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be


    Original     		PDF 2SD1616 2SD1616A 2SD1616A 2SD1616 0V/120V -100mA

    2SD1616AG

    Abstract: 2SD1616AL 2SD1616 2SD1616A 2SD1616-X-AB3-R 2SD161 2SD1616-G 2SD1616A-G XG03
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1616/A NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR „ DESCRIPTION * Audio frequency power amplifier * Medium speed switching Lead-free: 2SD1616L/2SD1616AL Halogen-free: 2SD1616G/2SD1616AG „ ORDERING INFORMATION


    Original     		PDF 2SD1616/A 2SD1616L/2SD1616AL 2SD1616G/2SD1616AG 2SD1616-x-AB3-R 2SD1616-x-G03-K 2SD1616-x-T92-B 2SD1616-x-T92-K 2SD1616-x-T9S-K 2SD1616A-x-AB3-R 2SD1616A-x-G03-K 2SD1616AG 2SD1616AL 2SD1616 2SD1616A 2SD1616-X-AB3-R 2SD161 2SD1616-G 2SD1616A-G XG03

    SD1616A

    Abstract: SD-1616 2SD1616 2SD1616A SD1616
    Text: NPN SILICON TRANSISTORS 2SD1616, 2SD 1616A DESCRIPTION The 2SD1616/2SD1616A are designed for use in driver and output stages of A F amplifier, general purpose application. PACKAGE DIMENSIONS in millimeters • Low Collector Saturation Voltage. FEATURES V c E sa t


    OCR Scan     		PDF 2SD1616, 2SD1616A 2SD1616/2SD1616A 2SD1616/2SD1616A) 2SB1116/2SB1116A SD1616A SD-1616 2SD1616 2SD1616A SD1616

    TRANSISTORS 640 JS

    Abstract: LC-1 2SD1616A
    Text: Transistors 2SD1616A USHA INDIA LTD AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Symbol Collector-Base Voltage VcBO Collector-Emitter Voltage VcEO Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse)


    OCR Scan     		PDF 2SD1616A 100mA 100mA TRANSISTORS 640 JS LC-1 2SD1616A