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2SD1857L Abstract: 2SD1857 Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92 1 TO-92NL *Pb-free plating product number: 2SD1857L	Original	PDF	2SD1857 80MHz) O-92NL 2SD1857L 2SD1857-x-T92-B 2SD1857L-x-T92-B 2SD1857-x-T92-K 2SD1857L-x-T92-K 2SD1857-x-T9N-B 2SD1857L-x-T9N-B 2SD1857L 2SD1857
2SD1857L Abstract: QW-R211-014 2SD1857 2SD1857l to-92nl package 80-MHz Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92NL *Pb-free plating product number: 2SD1857L	Original	PDF	2SD1857 80MHz) O-92NL 2SD1857L 2SD1857-x-T9N-A-B 2SD1857L-x-T9N-A-B 2SD1857-x-T9N-A-K 2SD1857L-x-T9N-A-K 2SD1857L-x-T9N-A-B O-92NL 2SD1857L QW-R211-014 2SD1857 2SD1857l to-92nl package 80-MHz
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) ORDERING INFORMATION	Original	PDF	2SD1857 80MHz) 2SD1857L-x-T60-K 2SD1857G-x-T60-K 2SD1857L-x-T6S-K 2SD1857G-x-T6S-K 2SD1857L-x-TM3-T 2SD1857G-x-TM3-T 2SD1857L-x-T92-B 2SD1857G-x-T92-B
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 FEATURES TO-92 * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92NL 1 TO-251	Original	PDF	2SD1857 80MHz) O-92NL O-251 O-92NL O-251 2SD1857L-x-T92-B 2SD1857G-x-T92-B 2SD1857L-x-T92-K
TO92NL Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) ORDERING INFORMATION	Original	PDF	2SD1857 80MHz) 2SD1857L-x-T92-B 2SD1857G-x-T92-B 2SD1857L-x-T92-K 2SD1857G-x-T92-K 2SD1857L-x- T92-R 2SD1857G-x- TO92NL
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR  FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz)  ORDERING INFORMATION	Original	PDF	2SD1857 80MHz) 2SD1857L-x-T6S-K 2SD1857G-x-T6S-K 2SD1857L-x-T92-B 2SD1857G-x-T92-B 2SD1857L-x-T92-K 2SD1857G-x-T92-K 2SD1857L-x- T92-R
2SD1857 Abstract: 2sd1857l Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 FEATURES TO-92 * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92NL 1 TO-251	Original	PDF	2SD1857 80MHz) O-92NL O-251 O-92NL O-251 2SD1857L-x-T92-B 2SD1857G-x-T92-B 2SD1857L-x-T92-K 2SD1857 2sd1857l