2SD1915F
Abstract: 2SD1915 XN01504 XN1504
Text: Composite Transistors XN01504 XN1504 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SD1915F x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN01504
XN1504)
2SD1915F
2SD1915F
2SD1915
XN01504
XN1504
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2sd1915F
Abstract: 2SD1915 vebo 25 XP4506
Text: Composite Transistors XP4506 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output ● 1 6 2 5 3 4 2SD1915F x 2 elements • Absolute Maximum Ratings Parameter Symbol Ratings Unit VCBO 50 V Collector to emitter voltage
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XP4506
2SD1915F
2sd1915F
2SD1915
vebo 25
XP4506
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2SD1915
Abstract: 2sd1915F XN04506 XN4506
Text: Composite Transistors XN04506 XN4506 NPN epitaxial planer transistor ● 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° ■ Absolute Maximum Ratings Parameter 1.1+0.2 –0.1 2SD1915F x 2 elements 0 to 0.1 ● (Ta=25˚C)
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XN04506
XN4506)
2SD1915F
2SD1915
2sd1915F
XN04506
XN4506
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2SD1915F
Abstract: Panasonic MARKING 2SD1915 XP01504 XP1504
Text: Composite Transistors XP01504 XP1504 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For amplification of low frequency output 2.1±0.1 0.425 0.65 1 2 5 3 4 +0.05 0.9± 0.1 2SD1915F x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element
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XP01504
XP1504)
2SD1915F
2SD1915F
Panasonic MARKING
2SD1915
XP01504
XP1504
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2SD1915F
Abstract: 2SD1915 XP4506 XP04506
Text: Composite Transistors XP04506 XP4506 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output ● 1 6 2 5 3 4 2SD1915F x 2 elements • Absolute Maximum Ratings Parameter Symbol Ratings Unit VCBO 50 V Collector to emitter voltage
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XP04506
XP4506)
2SD1915F
2SD1915F
2SD1915
XP4506
XP04506
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01504 (XP1504) Silicon NPN epitaxial planar type (0.425) 0.20±0.05 4 1 0.2±0.1 M Di ain sc te on na tin nc ue e/ d • Two elements incorporated into one package (Emitter-coupled transistors)
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2002/95/EC)
XP01504
XP1504)
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2SD1915F
Abstract: XP01504 XP1504 2SD1915
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01504 (XP1504) Silicon NPN epitaxial planar type (0.425) For amplification of low-frequency output Unit: mm 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package
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2002/95/EC)
XP01504
XP1504)
2SD1915F
XP01504
XP1504
2SD1915
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506 (XN4506) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half
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2002/95/EC)
XN04506
XN4506)
2SD1915F
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2SD1915F
Abstract: 2SD1915 XN01504 XN1504
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01504 (XN1504) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 1.50+0.25 –0.05 M Di ain sc te on na tin nc ue e/ d • Two elements incorporated into one package
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2002/95/EC)
XN01504
XN1504)
2SD1915F
2SD1915
XN01504
XN1504
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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2SD1915F
Abstract: 2SD1915 XN04506 XN4506
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506 (XN4506) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half
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2002/95/EC)
XN04506
XN4506)
2SD1915F
2SD1915
XN04506
XN4506
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XN04506 XN4506 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 0.30+0.10
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XN04506
XN4506)
2SD1915F
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2SD1915F
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506 (XN4506) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se pla m d m des
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2002/95/EC)
XN04506
XN4506)
2SD1915F
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2sd1915F
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1 5˚ • High forward current transfer ratio hFE • Low ON resistanse Ron 1.25±0.10 2.1±0.1
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2002/95/EC)
XP04506
XP4506)
2sd1915F
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XP01504 XP1504 Silicon NPN epitaxial planar type (0.425) For amplification of low-frequency output Unit: mm 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half
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XP01504
XP1504)
2SD1915F
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2SD1915F
Abstract: XP04506 XP4506
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04506 (XP4506) Silicon NPN epitaxial planar type (0.425) 0.2±0.05 5 6 4 1.25±0.10 2.1±0.1 • Features 5˚ Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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2002/95/EC)
XP04506
XP4506)
2SD1915F
XP04506
XP4506
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2sd1915f
Abstract: 2SD1915
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506G Silicon NPN epitaxial planar type For amplification of low-frequency output • Package ■ Features • Code Mini6-G3 • Pin Name Th an W is k y Th e a pro ou Fo an po du fo
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2002/95/EC)
XN04506G
2sd1915f
2SD1915
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2sd1915F
Abstract: XP01504 XP1504 2SD1915
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01504 (XP1504) Silicon NPN epitaxial planar type (0.425) For amplification of low-frequency output Unit: mm 0.20±0.05 4 M Di ain sc te on na tin nc ue e/ d 5 0.12+0.05
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2002/95/EC)
XP01504
XP1504)
2sd1915F
XP01504
XP1504
2SD1915
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2SD1915
Abstract: T0-220MF 2SD1899-Z 2SB1255 2SD1907 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895
Text: - 272 - Ta=25V, *EPiäTc=25'C -Ö r-L -a m ^ VcEO (V) 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1897 2SD1899 2SD1899-Z 2SD1902 2SD1903 2SD1904 2SD1905 2SM906 2SD1907 2SD1908 2SD1909 2SD1910 2SD1911 o c n i oí o ¿JL/1 ilIL 2SD1913 2SD1914 2SD1915
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EPHTc-25
2SD1891
2SD1892
2SD1893
2SD1894
2SD1895
2SD1896
2SD1897
2SD1912
2SB1274
2SD1915
T0-220MF
2SD1899-Z
2SB1255
2SD1907
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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an6512n
Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
Text: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.
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MN115P
MN116P
MN1201A
MN1201M
MN1201S
MN1202M
MN1204A
MN1204B
MN1204E
MN1204F
an6512n
mn1225
MN1280
mn6520
MN6130
MN6147C
MN12C261D
MN12C201D
MN3107
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2sD1915
Abstract: 2912 nec NEC 2905 2sc3358 nec 2910 2SC2694 2SC3240 2SC2960 2SC3069 2SC343
Text: - m % Type No. 2SC 287 1 L 2SC 2871S 2SC 2872 ^ 2SC 2873 2SC 2875 2SC 2876 2SC 2877 _ 2SC 2878 2SC 2879 2SC 2880 ^ 2SC 2881 2SC 2882 ^ 2SC 2883 2SC 2884 2SC 2885 ^ 2SC 2891 2SC 2900 - r ' 2SC 2901 ^ 2SC 2905 2SC 2905A 2SC 2907 ' 2 SC 2908 2SC 2909 — 2SC 2910 f
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2SC4500L
2SD1759
2SC4500S
2SD863
2SC2001
2SD592
2SC3580
2SD1623
2SC4357
2sD1915
2912 nec
NEC 2905
2sc3358
nec 2910
2SC2694
2SC3240
2SC2960
2SC3069
2SC343
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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