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Micro Commercial Components 2SD2257-BP TRANS NPN 100V 3A TO220F
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DigiKey	2SD2257-BP	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components 2SD2257,Q(J TRANS NPN 100V 3A TO220NIS
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DigiKey	2SD2257,Q(J	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components 2SD2257(Q,M) TRANS NPN 100V 3A TO220NIS
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DigiKey	2SD2257(Q,M)	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components 2SD2257,KEHINQ(J TRANS NPN 100V 3A TO220NIS
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DigiKey	2SD2257,KEHINQ(J	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components 2SD2257(CANO,Q,M) TRANS NPN 100V 3A TO220NIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SD2257(CANO,Q,M)	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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2SD2257 Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF
2SD2257	Toshiba	TRANS DARLINGTON NPN 100V 3A 3(2-10R1A)	Original	PDF
2SD2257	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SD2257	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SD2257	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SD2257	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SD2257	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SD2257	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SD2257	Toshiba	Silicon NPN transistor for high power switching applications, hammer drive and pulse motor drive applications	Scan	PDF
2SD2257	Toshiba	TRANSISTOR SILICON NPN EPITAXIAL TYPE	Scan	PDF
2SD2257,KEHINQ(J	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 3A 100V TO220-3	Original	PDF
2SD2257,NIKKIQ(J	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 3A 100V TO220-3	Original	PDF
2SD2257,Q(J	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 3A 100V TO220-3	Original	PDF
2SD2257-BP	Micro Commercial Components	TRANSISTOR TO-92 MOD	Original	PDF
2SD2257(CANO,A,Q)	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 3A 100V TO220-3	Original	PDF

2SD2257(CANO,Q,M)	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 3A 100V TO220-3	Original	PDF
2SD2257(Q,M)	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 3A 100V TO220-3	Original	PDF

2SD2257 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
D2257 Abstract: 2SB1495 2SD2257 Text: 2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1495	Original	PDF	2SD2257 2SB1495 D2257 2SB1495 2SD2257
2SB1495 Abstract: 2SD2257 Text: SavantIC Semiconductor Product Specification 2SB1495 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2257 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·High power switching applications	Original	PDF	2SB1495 O-220F 2SD2257 O-220F) -100V 2SB1495 2SD2257
2SB1495 Abstract: 2SD2257 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 2000 Min @ (VCE= -2V, IC= -2A) ·Low-Collector Saturation Voltage: VCE(sat)= -1.5V(Max.)@IC= -1.5A ·Complement to Type 2SD2257	Original	PDF	2SD2257 -10mA; -100V; 2SB1495 2SD2257
D2257 Abstract: 2SB1495 2SD2257 Text: 2SD2257 東芝トランジスタシリコンNPNエピタキシャル形 2SD2257 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用単位: mm • 直流電流増幅率が高い。 : hFE = 2000 最小 (VCE = 2 V, IC = 2 A)	Original	PDF	2SD2257 2SB1495 SC-67 2-10R1A 20070701-JA D2257 2SB1495 2SD2257
b1495 Abstract: 2SB1495 2SD2257 Text: 2SB1495 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1495 High-Power Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257	Original	PDF	2SB1495 2SD2257 b1495 2SB1495 2SD2257
B1495 Abstract: 2SB1495 2SD2257 Text: 2SB1495 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1495 High-Power Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257	Original	PDF	2SB1495 2SD2257 B1495 2SB1495 2SD2257
toshiba b1495 Abstract: No abstract text available Text: 2SB1495 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1495 High-Power Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257	Original	PDF	2SB1495 2SD2257 2-10R1A toshiba b1495
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD2257 Features • • • • • Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1	Original	PDF	2SD2257
Untitled Abstract: No abstract text available Text: 2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1495	Original	PDF	2SD2257 2SB1495
Untitled Abstract: No abstract text available Text: 2SB1495 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1495 High-Power Switching Applications Unit: mm • High DC current gain: hFE = 2000 min (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257	Original	PDF	2SB1495 2SD2257
Darlington NPN Silicon Diode Abstract: 2SB1495 2SD2257 Text: Inchange Semiconductor Product Specification 2SD2257 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High DC current gain ・Low saturation voltage ・Complement to type 2SB1495 ・DARLINGTON APPLICATIONS ・High power switching applications	Original	PDF	2SD2257 O-220F 2SB1495 O-220F) Darlington NPN Silicon Diode 2SB1495 2SD2257
2SB1495 Abstract: 2SD2257 Text: SavantIC Semiconductor Product Specification 2SD2257 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1495 ·DARLINGTON APPLICATIONS ·High power switching applications	Original	PDF	2SD2257 O-220F 2SB1495 O-220F) 2SB1495 2SD2257
D2257 Abstract: 2SB1495 2SD2257 Text: 2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1495	Original	PDF	2SD2257 2SB1495 D2257 2SB1495 2SD2257
d2257 Abstract: No abstract text available Text: 2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • Unit: mm High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1495	Original	PDF	2SD2257 2SB1495 SC-67 2-10R1A d2257

MMS8050-L Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664 Text: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.	Original	PDF	MJD31C MJD32C MJD42C MMJD2955 MMJD3055 MMS8050-L 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
alternator diode 1776 B Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)	Original	PDF	Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Untitled Abstract: No abstract text available Text: T O SH IB A 2SD2257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2257 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 1 Q ± 0 -3 • • • High DC Current Gain : hjrj; = 2000 MIN. Low Saturation Voltage : V^ e (sat) = 1.5V (MAX.)	OCR Scan	PDF	2SD2257 2SB1495
2SB1495 Abstract: 2SD2257 Text: TO SH IBA 2SD2257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2257 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ±0.3 r ^3.2 ± 0.2 2.7±Q 2 CO • • • High DC Current Gain : hjrE = 2000 MIN. Low Saturation Voltage :	OCR Scan	PDF	2SD2257 2SB1495 2SB1495 2SD2257
2SB1495 Abstract: 2SD2257 Text: TO SH IBA 2SD2257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2257 HIGH POWER SWITCHING APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0 .3 r ^ 3 .2 ± 0.2 2.7±Q 2 ro • High DC Current Gain : hjrE = 2000 MIN. • Low Saturation Voltage :	OCR Scan	PDF	2SD2257 2SB1495 2SB1495 2SD2257
Untitled Abstract: No abstract text available Text: TO SHIBA 2SB1495 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2SB1495 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS • • High DC Current Gain : hpE = 2000 Min. (VCE = - 2 V , I c = - 2 A ) Low Saturation Voltage • Complementary to 2SD2257 10±0.3	OCR Scan	PDF	2SB1495 2SD2257
Untitled Abstract: No abstract text available Text: SILICON NPN EPITAXIAL TYPE 2SD2257 Unit in mm HIGH POWER SWITCHING APPLICATIONS. 1 0 ± 0 .3 HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. • High DC Current Gain : hFE=2000 Min. (at VCE=2V, IC=2A) • Low Saturation Voltage : vCE(sat)=1.5V (MAX.) (at IC-1.5A)	OCR Scan	PDF	2SD2257 2SB1495
2SB1495 Abstract: 2SD2257 Text: TOSHIBA 2SB1495 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 495 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS • High DC Current Gain : hFE = 2000 Min. (VCE= -2 V , IC= -2 A ) Low Saturation Voltage : VCE(sat)=—1-5V (MAX.) (IC= -1.5A ) Complementary to 2SD2257	OCR Scan	PDF	2SB1495 2SD2257 2SB1495
2SD2257 Abstract: 2SB1495 Text: 2SD2257 TO SHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2257 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ±0.3 r ^3.2 ±0.2 2.7±Q 2 <v> • • • High DC Current Gain : hjrE = 2000 MIN. Low Saturation Voltage :	OCR Scan	PDF	2SD2257 2SB1495 2SD2257 2SB1495
Untitled Abstract: No abstract text available Text: TOSHIBA 2SD2257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE i <; n 1 1 s 7 w r • ■ T ’ V « HIGH PO W ER SWITCHING APPLICATIONS Unit in mm H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 + 0.3 • High DC Current Gain • Low Saturation Voltage : V çje sat = Í-5V (MAX.)	OCR Scan	PDF	2SD2257 2SB1495 20jus

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Micro Commercial Components 2SD2257-BP

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2SD2257 Datasheets (16)

2SD2257 Datasheets Context Search

D2257

2SB1495

2SB1495

D2257

b1495

B1495

toshiba b1495

Untitled

Untitled

Untitled

Darlington NPN Silicon Diode

2SB1495

D2257

d2257

MMS8050-L

alternator diode 1776 B

Untitled

2SB1495

2SB1495

Untitled

Untitled

2SB1495

2SD2257

Untitled