Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SD879 TO-92 TRANSISTOR NPN FEATURES z In Applications Where Two NiCd Batteries are Used to rovide 2.4V, two 2SD879s are used. z The charge time is approximately 1 second faster Than that of
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2SD879
2SD879s
750mW)
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Untitled
Abstract: No abstract text available
Text: UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES *In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.
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2SD879
2SD879
2SD879s
OT-89
QW-R208-010
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2SD879
Abstract: germanium transistors NPN germanium npn 92
Text: 2SD879 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. The charge time is approximately 1 second faster Than that of germanium transistors.
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2SD879
2SD879s
750mW)
germanium transistors NPN
germanium npn 92
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2sd879
Abstract: germanium transistors NPN
Text: UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES *In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.
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2SD879
2SD879
2SD879s
QW-R201-043
germanium transistors NPN
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2SD879
Abstract: No abstract text available
Text: Ordering number:EN550F NPN Epitaxial Planar Silicon Transistor 2SD879 1.5V, 3V Strobe Applications Package Dimensions unit:mm 2003B [2SD879] 5.0 4.0 5.0 4.0 0.45 0.5 0.6 2.0 • In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.
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EN550F
2SD879
2003B
2SD879]
2SD879s
750mW)
14Ltd.
2SD879
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germanium transistors NPN
Abstract: 2sd879 transistor germanium MS 3A
Text: UTC 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES *In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.
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2SD879
2SD879
2SD879s
OT-89
QW-R208-010
germanium transistors NPN
transistor germanium
MS 3A
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2SD879
Abstract: Transistor 5503
Text: Ordering number:EN550F NPN Epitaxial Planar Silicon Transistor 2SD879 1.5V, 3V Strobe Applications Package Dimensions unit:mm 2003B [2SD879] 5.0 4.0 5.0 4.0 0.45 0.5 0.6 2.0 • In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used.
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EN550F
2SD879
2003B
2SD879]
2SD879s
750mW)
2SD879
Transistor 5503
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PDF
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germanium transistors NPN
Abstract: 2SD879
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SD879 TRANSISTOR NPN FEATURES z In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. z The charge time is approximately 1 second faster Than that of
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2SD879
2SD879s
750mW)
germanium transistors NPN
2SD879
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES * In applications where two NiCd batteries are used to provide 2.4V,
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Original
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2SD879
2SD879
2SD879s
OT-89
QW-R208-010
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES * In applications where two NiCd batteries are used to provide 2.4V, two
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Original
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2SD879
2SD879
2SD879s
OT-89
QW-R208-010
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1.5V, 3V STROBE APPLICATIONS DESCRIPTION The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. FEATURES * In applications where two NiCd batteries are used to provide 2.4V,
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Original
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2SD879
2SD879
2SD879s
QW-R208-010
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD 2SD879 NPN EPITAXIAL SILICON TRANSISTOR 1 .5 V , 3 V ST ROBE APPLI CAT I ON S ̈ DESCRI PT I ON The UTC 2SD879 is a NPN epitaxial silicon transistor, designed for 1.5V and 3V strobe applications. ̈ FEAT U RES * In applications where two NiCd batteries are used to provide 2.4V,
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2SD879
2SD879
2SD879s
QW-R208-010
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kijima
Abstract: 2SD879 germanium transistors NPN DFC05 EE13 Sanyo Germanium
Text: Ordering number:EN550F _ 2SD879 NPN Epitaxial Planar Silicon Transistor 1.5V, 3V Strobe Applications A p p licatio n s • In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. • The charge time is approximately 1 second faster than th at of germanium transistors.
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OCR Scan
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EN550F
2SD879
2SD879s
750mW)
kijima
2SD879
germanium transistors NPN
DFC05
EE13
Sanyo Germanium
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PDF
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