2SJ194
Abstract: ITR00067 ITR00068
Text: 注文コード No.N 3 7 6 7 A 2SJ194 No. 3 7 6 7 A 51899 半導体ニューズ No.3767 とさしかえてください。 2SJ194 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。
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2SJ194
ITR00072
--50V
--10V
ITR00071
ITR00074
ITR00075
2SJ194
ITR00067
ITR00068
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EN3767
Abstract: 2SJ194
Text: Ordering number:EN3767 P-Channel Silicon MOSFET 2SJ194 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ194] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5
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EN3767
2SJ194
2083B
2SJ194]
2092B
EN3767
2SJ194
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EN3767
Abstract: 2SJ194
Text: Ordering number:EN3767 P-Channel Silicon MOSFET 2SJ194 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2083B [2SJ194] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5
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EN3767
2SJ194
2083B
2SJ194]
2092B
EN3767
2SJ194
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2sj111
Abstract: 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122
Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2SJ111 2SJ112 2SJ113 2SJ114 2SJ115 2SJ116 2SJ117 2SJ118
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2SJ101
2SJ102
2SJ103
2SJ104
2SJ105
2SJ106
2SJ107
2SJ108
2SJ109
2SJ110
2sj111
2SJ131
2sj110
2SJ112
2sj155
2SJ124
transistor 2sj162
2SJ109
2SJ113
2SJ122
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2sk3436
Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis
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TND023F
FX504
CPH5504
MCH5805
FX505
HPA72R
TND024F
FX506
MCH3301
TND024MP
2sk3436
2Sa1872
2sc6093
2SC4943
2sa1970
2SK3850
2SK1597
TT2084
2sc5267
2sk3744
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2sk3436
Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。
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40610HKPC
TC-00002289
CPH5815
MCH5815
MCH6629
MCH6649
CPH6610
CPH6614
SCH1411
SCH1436
2sk3436
2sc6093
2Sa1872
2SK1597
2SK3850
2SC5269
TT2084
2SC4943
2SC5793
2sa1970
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Untitled
Abstract: No abstract text available
Text: 2SJ194 _ 2 0 9 2 A_ ^ LD L o w D riv e S e rie s V d s s = 1 0 0 V P Channel Power M OSFET 13767 F eatures - Low ON resistance. •Very high-speed switching. • Low-voltage drive. isolute M axim um R atings at Ta = 25°C Drain to Source Voltage
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2SJ194
41293TH
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EN3767
Abstract: 2SJ194
Text: Ordering number:EN37 67 _ 2SJ194 No.3767 P-Channel MOS Silicon FET Very High-Speed Switching Applications Featu res •Low ON resistance. •Very high-speed switching. •Low-voltage drive. i solute Maximum R atings at Ta —25°C Drain to Source Voltage
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EN3767
2SJ194
100juA
-100V
EN3767
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mosfet 3767
Abstract: 2SJ194 2092A
Text: 2SJ194 2083A LD L o w D rive Series V Ds s = 1 0 0 V 2092A P Channel Power MOSFET 3767 Features • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute Maximum R atings at Ta = 25°C Drain to Source Voltage Vd ss Gate to Source Voltage
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2SJ194
2083a
2092a
mosfet 3767
2SJ194
2092A
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e1220
Abstract: 2SK2437
Text: SAfiYO New Products Of New Package 5/6-pi n XP Seri es :FX type 1 The Sanyo new package 5/6-pin XPs are intermediate sized devices between Sanyo PCP and TP packages and have high power capability. This package line includes large current switching transistor series, power MOS FET series, and other device series.
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MT950206TR
e1220
2SK2437
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TO-32-070
Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)
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T0220ML
TO-32-070
2SA1678
FC102
2SC4449
2SA1416
2SJ193
2sk283
2sC4106 application notes
2SC3383
FC124
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CI 7001
Abstract: 2SD1203 SS170 2sb1205 2SD180
Text: so h yo New Products Of New Package 5/6-pin XP Series FX type The Sanyo new package 5 /6 - p in XPs a re in te rm e d ia te siz e d d e v ic e s between Sanyo PCP and TP packages and have high power c a p a b il i ty . T h is package lin e in c lu d e s la rg e c u rre n t sw itc h in g t r a n s i s t o r s e r i e s , power MOS FET s e rie s , and o th e r d evice s e rie s .
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FX855
FX851
T940120TR
CI 7001
2SD1203
SS170
2sb1205
2SD180
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2SJ18
Abstract: 2SJ174 HA 1350S 2S1189 2S119 2sj196 mos-mcs 2SJ170 2SJ171 2SJ172
Text: - 22 - m % ft € m & m ss f t t % * K V ± * ft Ê (V) ft * tt ft (A) P d /P c h (W) Ig s s (max) (A) Vg s (V) % M (min) (max) Vd s (A) (V) (A) ft t*È (Ta=25‘ C) (min) (max) V d s (V) (V) (V) Id (A) (min) (S) Vds (V) Id (A) 2SJ170 0 * SW-Reg, DDC MOS
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2SJ170
2SJ171
2SJ172
2SJ173
2SJ174
M-30V
2SJ191
210nstyp
2SJ192
2SJ193
2SJ18
HA 1350S
2S1189
2S119
2sj196
mos-mcs
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2SJ270
Abstract: 2SJ26
Text: VDSS = 100V, P-channel Absolute maximum ratings atTa = 25°C Type No. Pactage VDSS m 2SJ286 VGSS •o W A CP 0.15 2SJ193 2SJ289 PCP SNIP NMP ±20 100 ±15 2.0 20 4.0 30 (£1) 6.5/9.0 2.4/3.5 Ciss typ typ (S) (pF) 5.0/7.0 0.27 45 1.8/2.4 1.0 160 6.5/9.0 5.0/7.0
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2SJ286
2SJ193
2SJ289
2SJ194
2SJ195
2SJ275
2SJ276
2SJ27716
2SJ270
2SJ26
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2SK1471
Abstract: 2SK2153 2SK1474 2SB1205 160i FX209 2SJ188 2SJ336 2SK1468 CI 7001
Text: SAUYO New Products Of New Package 5/6-pin XP Series FX type The Sanyo new package 5/6-pin XPs are intermediate sized devices between Sanyo PCP and TP packages and have high power capability. This package line includes large current switching transistor series, power MOS FET series, and other device series.
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900mm2XO
SB07-03P
2SK1467
SB05-05P
f-10pF
2SJ190
SB05-09
2SK1470
2SK1471
2SK2153
2SK1474
2SB1205
160i
FX209
2SJ188
2SJ336
2SK1468
CI 7001
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Untitled
Abstract: No abstract text available
Text: Power MOSFETs Electrical characteristic» T. » 31 °Q AtooMe mKknum ratings . Owto» _ - Pwtogi Appflcaflons m _ ' _ Voss » _ Voss w t# w 2SJ284* CP Very high-speed switch 30 ±15 0.3 2SJ285* CP Very high-speed switch 60 ±15 0.25 2SJ286* CP Very high-speed switch
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2SJ284*
2SJ286*
2SK1847
2SJ285*
2SJ233
2SK1731
2SK1732
2SK1734
2SK1735
DD14SSD
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J289
Abstract: K2171 2sj281 2SK1847 2SK1470 KD K1470 2sk669 K1311
Text: Small-signal Features MOS FETs ♦ Very low noise_ figure * Large _ |Yfs| # Low gate leak current * Small-sized packageipermitting — ' i ♦ FET-used sets to be made, smaller Case Oct 1in.es /uni I.:a SANYO :C:'4 sjc LF Amp, Low Noise, Analog Switch Impedance Conversion Applications
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3SK265
3SK266
3SK248
12/55m
2/80m
45/-/50m
130m/65m
21/90m
MT931224TR
J289
K2171
2sj281
2SK1847
2SK1470 KD
K1470
2sk669
K1311
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2SJ468
Abstract: 2SJ191 2SJ271 2SJ260 2SJ189 2SJ192 2SJ194 2SJ195 2SJ281 2SJ336
Text: Continued from previous page Electrical characteristics Ta = 25 V Absolute maximum ratings Type No. Package type Applications Rds(<w) @ Id •VGS VOSS (V) VGSS (V) ID (A) PD (W) Tdi OC) |Yfi|@ VDS ■ID RDS(mi) max(Q) Id (A) VGS (V) JA VDS (V) (A) 2S JI8 8
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2SJI88
2SJ189
2SJ191
2SJ192
2SJ194
2SJ195
2SJ253
T0220
2SJ260
2SJ468
2SJ271
2SJ281
2SJ336
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