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    2SJ258 Search Results

    2SJ258 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ258 Sanyo Semiconductor P-Channel Silicon MOSFET Original PDF
    2SJ258 Sanyo Semiconductor Ultra High Speed Switching MOSFET Scan PDF
    2SJ258 Sanyo Semiconductor TO-3PB, ZP, SMP Type Transistors Scan PDF
    2SJ258 Sanyo Semiconductor Large Signal Power MOSFET Scan PDF

    2SJ258 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    6A 1176

    Abstract: 2SJ258 ITR00208 ITR00209 ITR00210 ITR00211 ITR00212
    Text: 注文コード No.N 4 7 4 5 2SJ258 No. 4 7 4 5 三洋半導体ニューズ 52099 新 2SJ258 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。


    Original     		2SJ258 --10V --15V ITR00214 ITR00215 ITR00216 ITR00217 6A 1176 2SJ258 ITR00208 ITR00209 ITR00210 ITR00211 ITR00212 PDF

    6A 1176

    Abstract: 2SJ258 EN4745
    Text: Ordering number:EN4745 P-Channel Silicon MOSFET 2SJ258 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2090A 10.2 0.8 [2SJ258] 1 0.8 3 1.2 2.55 0 to 0.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.7 2.55 2 2.55 Specifications 1.3 1.4


    Original     		EN4745 2SJ258 2SJ258] 2SJ258applied 2SJ258-applied 6A 1176 2SJ258 EN4745 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ258 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)20 I(D) Max. (A)12 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)60 Minimum Operating Temp (øC)


    Original     		2SJ258 PDF

    EN4745

    Abstract: 6A 1176 2SJ258 EN474
    Text: Ordering number:EN4745 P-Channel Silicon MOSFET 2SJ258 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2090A 10.2 [2SJ258] 4.5 3 1.2 2.55 0 to 0.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD 2.7 2.55 2 1.35 1 0.8 2.55 Specifications


    Original     		EN4745 2SJ258 2SJ258] 2SJ258applied 2SJ258-applied EN4745 6A 1176 2SJ258 EN474 PDF

    on line ups circuit diagrams

    Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
    Text: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm


    Original     		EP51E CPH6605 MCH6613 ECH8609 CPH3424 CPH3427 K3614 FW343 FW356 FW360 on line ups circuit diagrams 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04 PDF

    TN6Q04

    Abstract: 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584
    Text: SANYO Power Transistors Bipolar Transistor Series & Schottky Barrier Diode Series CONTENTS 2ĝ5 ŝTO-220MF Package 6 ŝTO-220FI Package ŝLow-saturation Voltage Transistors 7 ŝTO-220FI5H Package 14 ŝHorizontal Deflection Output Use 8 ŝTO-220ML Package 15


    Original     		O-220MF O-220FI O-220FI5H O-220ML O-126 O-126LP O-126ML O-220FI O-220FI5H-HB O-220FI5H-HA TN6Q04 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584 PDF

    2sk3436

    Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
    Text: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis


    Original     		TND023F FX504 CPH5504 MCH5805 FX505 HPA72R TND024F FX506 MCH3301 TND024MP 2sk3436 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744 PDF

    TN6Q04

    Abstract: 2SJ585 TN6Q03 2sk4100 2SK4096LS 2SK4100ls 2SJ655 2SK3748 2SK4087LS datasheet 2SK4101LS
    Text: Large Signal Packages Selector Guide CONTENTS ŝQuick Selection Guide P-channel New 2 •TO-3JML Package 14 ŝQuick Selection Guide N-channel New 3~5 ■TO-3PBL Package 14 6,7 ■TO-3PB Package 14 8.9 ■TO-3PML Package 14 15 ŝSwitching Power Supply ŝMotor Drive Use


    Original     		O-220 O-220ML O-220FI O-220FI5H O-220FI O-220FI5H-HB O-220FI5H-HA TN6Q04 2SJ585 TN6Q03 2sk4100 2SK4096LS 2SK4100ls 2SJ655 2SK3748 2SK4087LS datasheet 2SK4101LS PDF

    2sk3436

    Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
    Text: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。


    Original     		40610HKPC TC-00002289 CPH5815 MCH5815 MCH6629 MCH6649 CPH6610 CPH6614 SCH1411 SCH1436 2sk3436 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970 PDF

    6A 1176

    Abstract: 2SJ258 EN4745
    Text: -Ordering —number:EN4745'»* i SANYO _ 2SJ258 No.4745 P -C hannel MOS Silicon F E T i Very High-Speed Switching Applications F eatu res • Low ON resistance. •Very high-speed switching. ■Low-voltage drive. • Surface m ount type device m ak in g the following possible


    OCR Scan     		EN4745 2SJ258 2SJ258-applied 6A 1176 PDF

    2SJ469

    Abstract: No abstract text available
    Text: 1 VDSS = 20V 30V, P-channel Electrical characteristics atTa =25 C Absolute maximum ratings at Ta =25°C Type No. Package Voss m 2SJ284 W CP •o W 0.3 2SJ187 2SJ287 VG8S ±15 2SJ416 m «5 VGS o mtntomax W 0.25+ 1.0 0.5 PCP Po* 1.0 to 2.0 3.5 120 1.0 to 2.5


    OCR Scan     		2SJ284 2SJ187 2SJ287 2SJ416 2SJ188 O-220 O-220ML 2SJ189 2SJ417 2SJ418 2SJ469 PDF

    2sk1885

    Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
    Text: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


    OCR Scan     		2SJ272 2SJ273 T0-220ML 2SJ274 2SK1904 2SK1905 60m/80m 2SK1906 2SJ275 2SJ276 2sk1885 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26 PDF

    2SJ437

    Abstract: 2SK244
    Text: il ucakon Examples lUsing a Schotfky Barner diode AC a d a p te r Using a power MOSFET) ; •>- - ■►! — ■-* A C a d a p te r o u tp u t o - o u tp u t Battery Battery ■ Device Lineup ♦ Schottky Barrier Diodes Package SB20W03P PCP SB40W03T TP-FA


    OCR Scan     		SB20W03P SB40W03T SBA100-04ZP SBA160-Q4ZP SBA50-04Y SBA10Q-04Y SBA160-04Y characteristicsSJ466 2SJ437 2SJ257 2SK244 PDF

    2SK2164

    Abstract: 2SK1885 2SJ270 2SJ260 2sj261
    Text: SAßiYO Power MOS FETs 3 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


    OCR Scan     		2SJ272 2SJ273 T0-220ML 2SJ274 2SK1904 2SK1905 60m/80m 2SK1906 2SJ275 2SJ276 2SK2164 2SK1885 2SJ270 2SJ260 2sj261 PDF

    2S1265

    Abstract: bj 950 131- 6 2SK1885 2SJ type 2sj262 2SK1883 2SK3066 2SK2432 2SJ253 2SJ260
    Text: Large-signal Power MOSFETs l The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


    OCR Scan     		low-126 T0-126LP T0-220CI T0-220ML SC-67, OT-186) O-220FIÂ SC-67KS0T-189} T0-220MF lsDwATT220> 2S1265 bj 950 131- 6 2SK1885 2SJ type 2sj262 2SK1883 2SK3066 2SK2432 2SJ253 2SJ260 PDF