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    2SJ603 Search Results

    2SJ603 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    2SJ603(0)-Z-E1-AZ Renesas Electronics Corporation Pch Single Power Mosfet -60V -25A 48Mohm Mp-25Z/To-220Smd Visit Renesas Electronics Corporation
    2SJ603-AZ Renesas Electronics Corporation Pch Single Power Mosfet -60V -25A 48Mohm Mp-25/To-220Ab Visit Renesas Electronics Corporation
    2SJ603-Z-E1-AZ Renesas Electronics Corporation Pch Single Power Mosfet -60V -25A 48Mohm Mp-25Z/To-220Smd Visit Renesas Electronics Corporation
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    2SJ603 Price and Stock

    Renesas Electronics Corporation 2SJ603(0)-Z-E1-AZ

    2SJ603-Z - Pch Single Power Mosfet -60V -25A 48Mohm Mp-25Z/To-220Smd '
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    Rochester Electronics 2SJ603(0)-Z-E1-AZ 57,941 1
    • 1 $4.51
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    • 100 $4.24
    • 1000 $3.83
    • 10000 $3.83
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    Renesas Electronics Corporation 2SJ603-ZJ

    P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; JEDEC-95 Code: TO-263AB; Maximum Operating Temperature: 150 Cel;
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    Vyrian 2SJ603-ZJ 167
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    Renesas Electronics Corporation 2SJ603

    P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; No. of Terminals: 3; Operating Mode: ENHANCEMENT MODE;
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    Vyrian 2SJ603 10
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    2SJ603 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ603 Kexin P-Channel MOSFET Original PDF
    2SJ603 NEC Pch power MOSFET 60V RDS(on)MAX=48m ohm TO-220AB,TO-262,TO-263 Original PDF
    2SJ603-S NEC Switching P-Channel Power MOS FET Original PDF
    2SJ603-Z NEC Switching P-Channel Power MOS FET Original PDF
    2SJ603-ZJ NEC Switching P-Channel Power MOS FET Original PDF

    2SJ603 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ603 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SJ603 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES ★ • Super low on-state resistance:


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    2SJ603 2SJ603 2SJ603-S 2SJ603-ZJ 2SJ603-Z O-220AB O-262 O-263 O-220SMD PDF

    2521a

    Abstract: 2SJ603
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SJ603 TO-263 +0.1 1.27-0.1 RDS on 2 = 75m MAX. (VGS = -4.0 V, ID =-13 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss: Ciss = 1900 pF TYP. 5.60 MAX. (VGS =-10 V, ID = -13A) Built-in gate protection diode +0.2 4.57-0.2


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    2SJ603 O-263 --13A 2521a 2SJ603 PDF

    M2SJ603

    Abstract: 2SJ603 2SJ603-S 2SJ603-Z 2SJ603-ZJ MP-25 MP-25Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ603 SWITCHING P-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SJ603 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Super low on-state resistance: RDS on 1 = 48 mΩ MAX. (VGS = −10 V, ID = −13 A)


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    2SJ603 2SJ603 O-263 2SJ603-Z O-262 2SJ603-ZJ O-220AB 2SJ603-S O-220SMD M2SJ603 2SJ603-S 2SJ603-Z 2SJ603-ZJ MP-25 MP-25Z PDF

    2SJ603

    Abstract: 2SJ603-S 2SJ603-Z 2SJ603-ZJ MP-25 MP-25Z TO-220SMD
    Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ603 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SJ603 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. PART NUMBER PACKAGE


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    2SJ603 2SJ603 O-220AB 2SJ603-S O-262 2SJ603-ZJ O-263 2SJ603-Z O-220SMD 2SJ603-S 2SJ603-Z 2SJ603-ZJ MP-25 MP-25Z TO-220SMD PDF

    2sk4145

    Abstract: 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919
    Text: PowerMOSFET Product Overview February 2010 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)  Sorted by voltage first, followed by resistance and current


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    SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) OT-23F, O-252Z, O-252ZK, O-252ZP, O-263ZJ, 2sk4145 2sk4075 UPA2724 2SK4212 2sk4213 uPA2804T1L 2SK4145-S19 2sk4202 uPA2211 2sk3919 PDF

    M2SJ598

    Abstract: M2SJ601 M2SJ600 M2SJ607 M2SJ599 M2SJ604 M2SJ605 M2SJ603 432E-3 M2SJ602
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    2SJ598 2SJ599 2SJ600 2SJ601 2SJ602 2SJ603 2SJ604 2SJ605 2SJ606 2SJ607 M2SJ598 M2SJ601 M2SJ600 M2SJ607 M2SJ599 M2SJ604 M2SJ605 M2SJ603 432E-3 M2SJ602 PDF

    2sk2500

    Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    C11178JJCV0IF0012 C11178JJCV0IF MIL-HDBK-217 MILMIL10100 MIL-HDBK-217Fit 2sk2500 UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1 PDF

    2sk4145

    Abstract: 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080
    Text: PowerMOSFET Product Overview www.renesas.eu 2010.04 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: Renesas uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)


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    SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) OT-23F, O-252Z, O-252ZK, O-252ZP, O-263ZJ, 2sk4145 2sk4075 2sk4213 uPA2591T1H 2SK4202 uPA2804T1L UPA2727T1A mosfet 2sk4145 UPA1914TE-T1 2sk4080 PDF

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


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    PDF

    MPA2733GR

    Abstract: MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 mpa602t 2SJ647M 2SKxxxx NP100P04PDG
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    O-263 O-252 mPA672T. mPA675T. mPA677TB. mPA678TB. mPA679TB. M8E0710J D18669JJ3V0SG D18669JJ3V0SG003 MPA2733GR MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 mpa602t 2SJ647M 2SKxxxx NP100P04PDG PDF

    transistor NEC 2SK2500

    Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    MIL-HDBK-217 C11178EJCV0IF transistor NEC 2SK2500 NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24 PDF

    SC-95

    Abstract: 2SK3294-ZJ-E1 UPA2724 NP22N055SLE-E1 2sk4075 UPA2726 2sk3919 2SJ598 2SK3570 UPA2723T1A
    Text: PowerMOSFET Product Overview April 2007 Dear User, Shipment Style This overview contains our current PowerMOSFET portfolio: NEC uses various packing methods depending on the device:  Listed by configuration single/dual and polarity (N or P)  Sorted by voltage first, followed by resistance and current


    Original
    MP-10, SC-62/SOT-89, SC-84, SC-95/SOT-6, SC-96 OT-23) O-252Z, O-252ZK, O-263ZJ, O-263ZK, SC-95 2SK3294-ZJ-E1 UPA2724 NP22N055SLE-E1 2sk4075 UPA2726 2sk3919 2SJ598 2SK3570 UPA2723T1A PDF

    2SJ603

    Abstract: 2SJ603-S 2SJ603-Z 2SJ603-ZJ MP-25 MP-25Z
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    PD166104GS

    Abstract: PA1915TE mp sot 23 uPD166007 UMOS-4 np np88n04kug NP180N04TUG 2sj598 PC78L05T PD166005GR
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    2SJ607( 2SJ607 PC29L05T OT-89 16cm2 PC1099GS PD166104GS PA1915TE mp sot 23 uPD166007 UMOS-4 np np88n04kug NP180N04TUG 2sj598 PC78L05T PD166005GR PDF

    2SC5664

    Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
    Text: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation


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    D18597EJ1V0SG 2SC5664 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326 PDF