2SK1880S Search Results

2SK1880S Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SK1880STL-E		Renesas Electronics Corporation	Nch Mosfet For Switching

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Renesas Electronics Corporation 2SK1880S N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Transistor Element Material: SILICON; Peak Reflow Temperature (C): 245;
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Vyrian	2SK1880S		415			1 - 10 - 100 - 1000 - 10000 -	Get Quote

2SK1880S Datasheets (8)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SK1880(S)		Hitachi Semiconductor	Power switching MOSFET		Original	PDF
2SK1880S		Hitachi Semiconductor	Mosfet Guide		Original	PDF
2SK1880S		Hitachi Semiconductor	Silicon N-Channel MOS FET		Original	PDF
2SK1880S		Kexin	N-Channel MOSFET		Original	PDF
2SK1880(S)		Renesas Technology	Silicon N Channel MOS FET		Original	PDF
2SK1880S		Renesas Technology	SMD, High Speed Power Amplifier, 600V 1.5A 20W, MOS-FET N-Channel enhanced		Original	PDF
2SK1880S		Renesas Technology	Silicon N-Channel MOS FET		Original	PDF
2SK1880S		TY Semiconductor	N-Channel MOSFET - TO-252		Original	PDF

2SK1880S Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SK1880S Abstract: No abstract text available Text: IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK1880S Features TO-252 Unit: mm Low on-resistance High speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1	Original	2SK1880S O-252 2SK1880S	PDF
Untitled Abstract: No abstract text available Text: Transistors IC SMD Type Type SMD Product specification 2SK1880S Features TO-252 Unit: mm Low on-resistance High speed switching +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1	Original	2SK1880S O-252	PDF
2SK1880 Abstract: 2SK1880L-E 2SK1880STL-E PRSS0004ZD-A PRSS0004ZD-C Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009	PDF
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
2SK1880 Abstract: 2SK1880L-E 2SK1880STL-E PRSS0004ZD-A PRSS0004ZD-C SH-500 Text: 2SK1880 L , 2SK1880(S) Silicon N Channel MOS FET REJ03G0983-0200 (Previous: ADE-208-1331) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakdown Suitable for switching regulator	Original	2SK1880 REJ03G0983-0200 ADE-208-1331) PRSS0004ZD-A PRSS0004ZD-C 2SK1880L-E 2SK1880STL-E PRSS0004ZD-A PRSS0004ZD-C SH-500	PDF