Untitled
Abstract: No abstract text available
Text: 2SK1939-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-3P Applications Switching regulators
|
Original
|
2SK1939-01
SC-65
|
PDF
|
fet 600V 4a
Abstract: No abstract text available
Text: 2SK1939-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Ω 8A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
|
Original
|
2SK1939-01
fet 600V 4a
|
PDF
|
n-CHANNEL POWER MOSFET 600v
Abstract: 2SK1939-01
Text: 2SK1939-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Ω 8A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
|
Original
|
2SK1939-01
n-CHANNEL POWER MOSFET 600v
2SK1939-01
|
PDF
|
2SK1939-01
Abstract: No abstract text available
Text: 2SK1939-01 N-channel MOS-FET FAP-IIA Series 600V > Features - 1,2Ω 8A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
|
Original
|
2SK1939-01
2SK1939-01
|
PDF
|
2SK1939-01
Abstract: SC-65 NT 101
Text: 2SK1939-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof TO-3P Applications Switching regulators
|
Original
|
2SK1939-01
SC-65
2SK1939-01
SC-65
NT 101
|
PDF
|
2SK1939
Abstract: 2SK1939-01 SC-65 T151 A2281
Text: 2SK1939-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features Outline Drawings • High speed switching • Low on-resistance 03,2±O.l 45*0-2 • No secondary breakdown • Low driving power • High voltage Gate • V GS-=t30V Guarantee
|
OCR Scan
|
2SK1939-01
SC-65
2SK1939
2SK1939-01
SC-65
T151
A2281
|
PDF
|
A2282
Abstract: n channel mosfet 300v 80a
Text: 2SK1939-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ - F A P - IIA • Features • • • • • • • S E R IE S I Outline Drawings High speed sw itching
|
OCR Scan
|
2SK1939-01
A2282
n channel mosfet 300v 80a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FU JI 2SK1939-01 e iL a iE ir u ô U É FAP-IIA Series N-channel MOS-FET 600V 8A 100W > Outline Drawing > Features - 1,2 a High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof
|
OCR Scan
|
2SK1939-01
|
PDF
|
2SK100
Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:
|
OCR Scan
|
T0-220
T0-220F15
2SJ472-01L
2SJ314-01L
2SJ473-01L
2SK2248-01L
2SK1942-01
2SK2770-01
2SK2528-01
2SK1944-01
2SK100
2SK2765
2SK2029-01LS
2sk1936
2SK1940
2sk2761
2SK196
2SK2082
2SK1082
2SK182
|
PDF
|
6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
|
OCR Scan
|
1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOSFETs FAP-IIA Series - VG S ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 200-1000 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK22S1-01 2SK2292-01L,S 2SK2099-01 L,S i 2SK2253-01MR 2SK22S2-01L.S 2SK22S5-01MR ; 2SK2254-01L,S 2SK2256-01
|
OCR Scan
|
2SK2518-01MR
2SK2250-01L
2SK22S1-01
2SK2292-01L
2SK2099-01
2SK2253-01MR
2SK22S2-01L
2SK22S5-01MR
2SK2254-01L
2SK2256-01
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOSFETs FAP-IIA Series - VGS ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 200-1000 Volts Cha racteristics (M ax.1 ton (ns) toff (ns) ciss(pf) Coss(pf) 20 200 2700 480 115 190 TO-220F15 2 10 2.00 380 80 250 70 105 K-PACK L,S 2.00
|
OCR Scan
|
O-220F15
O-220
O-22QF15
T6-226F15-------------
2SK2082-01
2SK2771-01R
2SK2004-01
2SK1986-01
|
PDF
|
2SK1937
Abstract: No abstract text available
Text: JK /\°7 -MOSFET / Power MOSFETs FAP-IIA '> U - X ' f m & ' f ' £ L FAP-IIA series o w Voss - o n resistance and low typical capacitance lo Id pulse Device type R ds (on-) Max. * ’ P d * Watts V69S Vos (th) Typ. Volts yf n Package Page 60,61 Net mass
|
OCR Scan
|
2SK2518-01MR
2SK2918-01MR
2SK2251-01
T0-220F15
O-220AB
O-220F15
2SK1937
|
PDF
|
2SK2652
Abstract: 2SK2771-01R
Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT
|
OCR Scan
|
F8006N
F7007N
2SJ472-01L
T0-220
2SJ314-01L
2SJ473-01L
2SJ474-01L
2SJ476-01L
2SK2760-01R
2SK2148-01R
2SK2652
2SK2771-01R
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,
|
OCR Scan
|
2SK2770-01
2SK2272-01R
2SK2528-01
2SK1212-01R
2SK1944-01
2SK2653-01R
2SK727-01
2SK1217-01R
2SK1082-01
2SK2655-01R
|
PDF
|
TO-220F15
Abstract: 2SK1940 2SK2771 K1941 SK2002-01MR 2SK2082 2SK2082-01 2SK2250-01L 2SK2252-01L 2SK2253-01MR
Text: MOSFETs_ FAP-IIA Series - VGS ± 30V, Reduced Turn-Off Time, VGS TH ± .5V, High Avalanche Ruggedness 2 0 0 -1 0 0 0 Volts Device Type 2SK2518-01MR 2SK2250-01L.S 2SK22S1-01 2SK2292-01L,S 2SK2099-01 L,S 2SK2253-01MR 2SK2252-01L,S
|
OCR Scan
|
2SK2518-01MR
O-220F15
2SK2250-01L
2SK22S1-01
O-220
2SK2292-01L
2SK2099-01
2SK2253-01MR
T0220F15
2SK2252-01L
TO-220F15
2SK1940
2SK2771
K1941
SK2002-01MR
2SK2082
2SK2082-01
|
PDF
|