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Shindengen Electronic Manufacturing Co Ltd 2SK2666 900V 3A N-CHANNEL ENHANCEMENT TYPE POWER MOSFET Power Field-Effect Transistor, 3A I(D), 900V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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2SK2666 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SK2666		Shindengen Electric	Power MOSFETs - HVX-II Series (Three Terminal Type)		Original	PDF
2SK2666		Shindengen Electric	Power MOSFET Selection Guide		Original	PDF

2SK2666 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SK2666 Abstract: F3F90HVX2 2sk2666 t Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2666 F3F90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 900V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.	Original	PDF	2SK2666 F3F90HVX2 FTO-220 2SK2666 F3F90HVX2 2sk2666 t
Untitled Abstract: No abstract text available Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2666 F3F90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 900V 3A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.	Original	PDF	2SK2666 F3F90HVX2 FTO-220
2SK2666 Abstract: F3F90HVX2 Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2666 F3F90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 900V 3A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.	Original	PDF	2SK2666 F3F90HVX2 FTO-220 2SK2666 F3F90HVX2
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	PDF	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
2SK4111 Abstract: 2SK4110 2SK4106 2sk4112 2sk2671 2sk4113 2SK2648 2N5121 2N5160 equivalent 2SK2666 Text: STI Type: 2SK258 Notes: Breakdown Voltage: 250 Continuous Current: 8 RDS on Ohm: 1.12 Trans Conductance Mhos: 0.9 Trans Conductance A: 3.0 Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:	Original	PDF	2SK258 O-204AA/TO-3 2SK259 2SK258H O-218 2SK695 2SK695A 2SK4111 2SK4110 2SK4106 2sk4112 2sk2671 2sk4113 2SK2648 2N5121 2N5160 equivalent 2SK2666
F3F90HVX2 Abstract: 2SK2666 2sk2666 t Text: H V X -I Iv 'J -X M OSFET HVX-n SERIES POWER MOSFET • Wfê-SÜÉBI O U T L IN E D IM E N S IO N S 2SK2666 F3F90H VX 2 ■ R A TIN G S ■ A b s o lu te M axim um R a tin g s if Ite m g od Tn Sym bol S t o r a g e T e m p e ra tu r e -f- -y JU C h a n n e l T e m p e r a tu r e	OCR Scan	PDF	2SK2666 F3F90H 10//S. F3F90HVX2) F3F90HVX2 2SK2666 2sk2666 t
2SK2674 Abstract: No abstract text available Text: Power MOSFETs HVX-II series N-Channel, Enhancement type I, ^¿y E-pack SMD Surface Mount Cis3 (typ) R dS(ON) V dss Id Pt .i ' j . . .JA I. . 2SK2663 2SK2665 2SK2670 900 1 3 5 . m Tch V gss (max) . ivi . .L'ÌL . _	OCR Scan	PDF	STO-220 2SK2663 2SK2665 2SK2670 STO-220 Fig30-45-4 2SK2333 2SK2664 2SK2674
2SK2067 Abstract: S20LCA20 d4la20 12014af S12KC40 S24LCA20 SRT-2W6H D1NL20 S10SC4 TRANSISTORS REPLACEMENT Text: List of Discontinued Parts T h e d is c o n tin u e d p a rts a re as fo llo w s . T h e c h a r a c te r is tic s and p e rfo rm a n c e o f re p la c e m e n t p a rts a re a lm o s t th e sam e, b u t th e y are n o t id e n tic a l in all re s p e c ts .	OCR Scan	PDF	S1RBA80 D1NK20 D1NK20H D1NK40 D1NK40H S1K20 S1K20H S1K40 S1K40H S2K20 2SK2067 S20LCA20 d4la20 12014af S12KC40 S24LCA20 SRT-2W6H D1NL20 S10SC4 TRANSISTORS REPLACEMENT
D2SBA60 Abstract: 2SD1515 2SC3259 2SC3261 S1WB40 SRT-2W6H 2SC4530 2SC3262 2SC2789 S12KC20 Text: List of Discontinued Parts The discontinued parts are as follows. The characteristics and performance of replacement parts are almost the same, but they are not identical in all respects. Therefore, we ask you to study the details shown in the list carefully when using the parts.	OCR Scan	PDF	D1V60 D4BB10 D4BB20 D4BB40 D4BB60 S1RBA10 S1RBA20 S1RBA40 S1RBA60 S1RBA80 D2SBA60 2SD1515 2SC3259 2SC3261 S1WB40 SRT-2W6H 2SC4530 2SC3262 2SC2789 S12KC20
S20LCA20 Abstract: D5LCA20 2SK2067 SRK-12ZB D8LCA20 D15LCA20 D5KC20R S24LCA20 D8LCA20R SRT-2W6H Text: List of Discontinued Parts The d iscontinued parts are as follow s. The characteristics and performance of replacem ent parts are alm ost the same, but they are not identical in all respects. Therefore, we ask you to study the details shown in the list carefully when using the parts.	OCR Scan	PDF	S1RBA80 D1NK20 D1NK20H D1NK40 D1NK40H S1K20 S1K20H S1K40 S1K40H S2K20 S20LCA20 D5LCA20 2SK2067 SRK-12ZB D8LCA20 D15LCA20 D5KC20R S24LCA20 D8LCA20R SRT-2W6H
Untitled Abstract: No abstract text available Text: Pow er M O S F E T HVX series N-Channel, Enhancement type Part No. Absolute Maximum Ratings Electrical Characteristics R d s ON ton toff EIAJ Tch V dss V g ss ID Pt (max) (typ) (typ) No. [°C ] [V] [V] [A] [W ] [Q ] [ns] [ns] Package Fig. 1 10 50 30 70 100	OCR Scan	PDF	61-4SMD) O-220 IT0-220 2SK1533 FT0-220 FTO-220 ST0-220 67SMD)
complementary MOSFET 2sk Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series Text: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V	OCR Scan	PDF	DC12V DC24V DC48V AC100V AC200V 0-60V) 2SJ487 2SK2816 2SJ488 2SJ489 complementary MOSFET 2sk transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
Untitled Abstract: No abstract text available Text: H V X - I$ /U - X /19-M O SFET HVX-n SERIES POWER MOSFET m 7 X > A > .Jt>hlS O U T L IN E D IM E N S IO N S Case : FTO-220 2SK 2666 F3 F90 H VX2 900v 3 a \ R A TIN G S Absolute Maximum Ratings 15 il- « Item s KU"f > • v - x f l j ) ± V d ss K \y 4 's	OCR Scan	PDF	/19-M FTO-220 2SK2666 F3F90HVX2)
2SK2188 Abstract: F10W90HVX2 2SK2669 2SK2196 F20w 2SK2177 FP7W90HVX2 2SK2182 Text: ¡Ê fc -S lïi ü « R A T IN G S Teh V d s s V g s s Id DC EIA J No. Type No. «SlWflHÌ T c = 25"C E lectrical C h aracteristics Absolute Maximum Ratings [•c] [V ] [V ] P t R d s ON (max) Tc=25°C V g s = 1 0 V Id Iti C iss (typ) ton toff (typ) (typ)	OCR Scan	PDF	2SK2177 2SK2178 2SK2179 2SK2180 2SK2181 2SK2182 2SK2183 2SK2184 2SK2185 2SK2186 2SK2188 F10W90HVX2 2SK2669 2SK2196 F20w FP7W90HVX2