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    2SK405 Search Results

    2SK405 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    2SK4057-ZK-E1-AY Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-3ZK, /Embossed Tape Visit Renesas Electronics Corporation
    2SK4058-ZK-E1-AY Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-3ZK, /Embossed Tape Visit Renesas Electronics Corporation
    2SK4058-S15-AY Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK4057-ZK-E2-AY Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-3ZK, /Embossed Tape Visit Renesas Electronics Corporation
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    2SK405 Price and Stock

    Toshiba America Electronic Components 2SK405

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    2SK405 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK405 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK405 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK405 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK405 Unknown Scan PDF
    2SK405 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK405 Unknown FET Data Book Scan PDF
    2SK405 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK405 Toshiba Silicon N Channel MOS type Scan PDF
    2SK405 Toshiba N-Channel Enhancement MOSFET Scan PDF
    2SK4057-ZK-E1-AY Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V MP-3ZK/TO-252 Original PDF
    2SK4057-ZK-E2-AY Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V MP-3ZK/TO-252 Original PDF
    2SK4058-ZK-E1-AY Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V TO-252 Original PDF
    2SK4058-ZK-E2-AY Renesas Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 25V MP-3ZK/TO-252 Original PDF
    2SK4059TK Toshiba Silicon N Channel Junction Type For ECM Original PDF
    2SK4059TV Toshiba Silicon N Channel Junction Type For ECM Original PDF
    2SK405O Toshiba Silicon N-Channel MOS Type FET Transistor Scan PDF
    2SK405Y Toshiba Silicon N-Channel MOS Type FET Transistor Scan PDF

    2SK405 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SK4059CT Category: Transistors /Small-Signal FETs/Junction FETs Single


    Original     		PDF 2SK4059CT 2SK4059CT 16-Apr-09

    Untitled

    Abstract: No abstract text available
    Text: 2SK4059MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059MFV For ECM Unit: mm Application for compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C


    Original     		PDF 2SK4059MFV 100mV

    2SK4059TK

    Abstract: No abstract text available
    Text: 2SK4059TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TK For ECM Unit: mm Rating Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Junction Temperature Tj 125 °C Tstg −55~125 °C Storage temperature range


    Original     		PDF 2SK4059TK 2SK4059TK

    2SK4059MFV

    Abstract: No abstract text available
    Text: 2SK4059MFV 東芝ジャンクション ＦＥＴ シリコンＮチャネル接合形 2SK4059MFV エレクトレットコンデンサマイクロフォン用 0.22±0.05 単位: mm 0.32±0.05 0.4 ・過渡応答性に優れる 1.2±0.05 0.8±0.05 1 0.4 1.2±0.05


    Original     		PDF 2SK4059MFV 100mV 2SK4059MFV

    2SK4059MFV

    Abstract: No abstract text available
    Text: 2SK4059MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059MFV For ECM Unit: mm Application for compact ECM 0.22±0.05 V 10 mA Drain power dissipation Ta = 25°C PD (Note 1) 150 mW Tj 125 °C Tstg −55~125 °C Junction Temperature


    Original     		PDF 2SK4059MFV 2SK4059MFV

    2SK4059TV

    Abstract: No abstract text available
    Text: 2SK4059TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 Rating VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range


    Original     		PDF 2SK4059TV 2SK4059TV

    Untitled

    Abstract: No abstract text available
    Text: 2SK4059MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059MFV For ECM Unit: mm Application for compact ECM 0.22±0.05 V 10 mA Drain power dissipation Ta = 25°C PD (Note 1) 150 mW Tj 125 °C Tstg −55~125 °C Junction Temperature


    Original     		PDF 2SK4059MFV

    Untitled

    Abstract: No abstract text available
    Text: 2SK4059TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TK For ECM Unit: mm Application for compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Junction Temperature


    Original     		PDF 2SK4059TK 100mV

    Untitled

    Abstract: No abstract text available
    Text: 2SK4059TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 Rating 0.4 0.4 2 0.3±0.05 3 Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100


    Original     		PDF 2SK4059TV 100mV

    2SK4059TK

    Abstract: No abstract text available
    Text: 2SK4059TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TK For ECM • Application for compact ECM 0.22±0.05 Unit: mm -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature


    Original     		PDF 2SK4059TK 2SK4059TK

    Bk210

    Abstract: 2SK4059TK A3375
    Text: 2SK4059TK 東芝ジャンクション ＦＥＴ シリコンＮチャネル接合形 2SK4059TK エレクトレットコンデンサマイクロフォン用 単位: mm 0.22±0.05 0.9±0.1 絶対最大定格 Ta=25℃ 0.45 0.45 1.4±0.05 ・過渡応答性に優れる


    Original     		PDF 2SK4059TK 395mm 100mV Bk210 2SK4059TK A3375

    2sk4058

    Abstract: d1803 2SK4058-ZK-E2-AY 2SK4058-ZK 2SK4058-ZK-E1-AY sd 431 transistor
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4058 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4058 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous


    Original     		PDF 2SK4058 2SK4058 O-251) -S27-AY 2SK4058-ZK-E1-AY 2SK4058-ZK-E2-AY O-251 O-252 d1803 2SK4058-ZK-E2-AY 2SK4058-ZK 2SK4058-ZK-E1-AY sd 431 transistor

    2SK4059TV

    Abstract: No abstract text available
    Text: 2SK4059TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TV For ECM Unit: mm Application for Ultra-compact ECM Lead Pb -free 1.2±0.05 Rating 0.4 0.3±0.05 3 Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25°C)


    Original     		PDF 2SK4059TV 2SK4059TV

    2SK4059TK

    Abstract: No abstract text available
    Text: 2SK4059TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TK For ECM Unit: mm Application for compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj


    Original     		PDF 2SK4059TK 2SK4059TK

    2SK425

    Abstract: 2sk414 2sk495 2SK405 2SK500 2SK426 2SK431 2SK470 2SK424 2SK433
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SK401 2SK402 2SK403 2SK404 2SK405 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 2SK417 2SK418


    Original     		PDF 2SK401 2SK402 2SK403 2SK404 2SK405 2SK406 2SK407 2SK408 2SK409 2SK410 2SK425 2sk414 2sk495 2SK405 2SK500 2SK426 2SK431 2SK470 2SK424 2SK433

    sd 431 transistor

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4058 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4058 is N-channel MOSFET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4058-S15-AY


    Original     		PDF 2SK4058 2SK4058 2SK4058-S15-AY O-251 O-252 2SK4058-ZK-E1-AY 2SK4058-ZK-E2-AY O-251) sd 431 transistor

    Untitled

    Abstract: No abstract text available
    Text: 2SK4059TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 Rating VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range


    Original     		PDF 2SK4059TV

    2sk405 2sj115

    Abstract: 2SK405
    Text: i TOSHIBA FIELD EFFECT TRANSISTOR 2SK405 SILICON N CHANNEL MOS TYPE A U DIO F R EQUENCY POWER AMP L I F I E R APPLICATION. Unit in mm 1&9MAX. FEATURES: . High B r e a k down Voltage 05.2±Q2 : V[ sg=160V . High Forward Tra n s f o e r Admit t a n c e : |Yfsl=2.0S Typ.)


    OCR Scan     		PDF 2SK405 2SJ115 2sk405 2sj115 2SK405

    2sk405 2sj115

    Abstract: 2SK405 2sj115 2SK405O 2SJ115/2SK405
    Text: 5; wnyN3-v y^ivMOSBmnmm y six? 2SK405 .' mm o s & * • ¡ ¡ i t H : "£ •j'o • I l i J [ p I g a 7 K ^ V A - f t 0 : |Y f s | = 2 . 0 S ( . 15.9 max. 03.2±O.2 o| lo I^ / i®1 I V D g g = 160V 2 S J1 1 5 t 2. o ± g 3 + 0.3 1 .0 - a 25 a4 5 ± a 2


    OCR Scan     		PDF 2SK405 2SJ115 2-16cib 2sk405 2sj115 2SK405 2sj115 2SK405O 2SJ115/2SK405

    Untitled

    Abstract: No abstract text available
    Text: 45E T> • TOTVSSD 0017Ô3T ITO S H R TOSHIBA FIELD EFFECT TRANSISTOR 2SK405 SILICON N CHANNEL MOS TYPE TOSHIBA DISCRETE/OPTO AUDIO FREQUENCY POWER AMPL IF IE R APPLICATION. Unit in mm 15.9 MAX. 03.2±aa FEATURES: . High Breakdown Voltage v DSS=160V . High Forward Transfoer Admittance


    OCR Scan     		PDF 2SK405 2SJ115

    mg15g1al3

    Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115
    Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673


    OCR Scan     		PDF 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115

    2sk405 2sj115

    Abstract: 2SJ11 2SK405 2SJ115
    Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ115 SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. 03.2x0.2 1 5l9 MAX . FEATURES: . High Breakdown Voltage v DSS=-160V . High Forward Transfer Admittance IYf s I=2.OS Typ. . Complementary to 2SK405


    OCR Scan     		PDF 2SJ115 2SK405 -160V 2sk405 2sj115 2SJ11 2SK405 2SJ115

    2sk405 2sj115

    Abstract: 2SK405 2SJ115 2SJ115/2SK405
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK405 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mra 0 3 . 'Z ± O . Z FEATURES: . High Breakdown Voltage VDSS=1&0V . High Forward Transfoer Admittance |Yfs]=2.0S Typ. . Complementary to 2SJ115


    OCR Scan     		PDF 2SK405 2SJ115 2sk405 2sj115 2SK405 2SJ115/2SK405

    2N3904

    Abstract: Z-47 2SA1015 2SK1529 SM12 YTFP150
    Text: ALPHABETICAL INDEX 2N3904 .5 2SJ201 . 97 2N3906 . 9 2SK405 . 100 2N4123 . 13


    OCR Scan     		PDF 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2SJ201 2SK405 2N3904 Z-47 2SA1015 2SK1529 SM12 YTFP150