2SK752
Abstract: NEC diode 2SK754 3N125 3N126 2SK791 2SK755 3N105 3N134 82230
Text: PART NUMBER INDEX Part Number Manufacturer 2SK752 2SK753 2SK754 2SK755 2SK756 2SK757 2SK758 2SK759 2SK760 2SK761 2SK762 2SK762A 2SK763 2SK763A 2SK764 2SK764A 2SK765 2SK765A 2SK766 2SK767 2SK768 2SK769 2SK770 2SK771 2SK772 2SK773 2SK774 2SK775 2SK776 2SK777
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2SK752
2SK753
2SK754
2SK755
2SK756
2SK757
2SK758
2SK759
2SK760
2SK761
NEC diode
3N125
3N126
2SK791
3N105
3N134
82230
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2sk763
Abstract: No abstract text available
Text: P o w e r F-MOS FET 2SK763, 2SK763A 2SK763, 2SK763A Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • • • • Low ON resistance RDS on : RDS (on) = 0 .9 ft (typ.) High switching rate : tf= 5 0 n s (typ.) No secondary breakdown
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2SK763,
2SK763A
2SK763
G017G7b
2sk763
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2SK760
Abstract: K1140 SC-65
Text: Power F-MOS FET 2SK760 2SK760 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • • • • Low ON resistance R d s on : Rns (on) = 0.22il (typ.) High switching rate : tf= 120ns (typ.) No secondary breakdown Large power Unit: mm ■Application
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2SK760
120ns
QD17Q70
2SK760
K1140
SC-65
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2SK763
Abstract: 2SK763A 2sk76
Text: Power F-MOS FET 2SK763, 2SK763A 2SK763, 2SK763A Silicon N-channel Power F-MOS FET Package Dimensions • Features Unit: nun • Low ON re sistan c e Rds on : RDS (on) = 0 .9 f i (typ.) • High sw itching ra te : tf= 5 0 n s (typ.) 4 .4 m ax . • No secondary breakdow n
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2SK763,
2SK763A
2SK763
2SK763
2SK763A
2sk76
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2SK769
Abstract: No abstract text available
Text: P o w er F-MOS FET 2SK769 2SK769 Silicon N-channel Power F-MOS FET • Package D im ensions ■ Features • L ow O N r e s is ta n c e Rui on : R Ds (on) = 0 ,6 5 il (ty p .) Unit: mm • H igh sw itch in g r a te : t f = 9 0 n s (ty p .) 5.2max 15 5max
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2SK769
VDO-150V
Tc-25C
G0170Ã
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2SK761
Abstract: 2sk76
Text: Power F-MOS FET 2SK761 2SK761 Silicon N-channel Power F-MOS FET Package D im ensions • Features • L o w O N r e s i s t a n c e Rub o n : R ds (o n ) = 0 . 1 5 f i ( ty p .) Unit', mm 5.2max. 15 5max. • H ig h s w itc h in g r a t e : t f = 1 2 0 n s ( ty p .)
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2SK761
120ns
2SK761
2sk76
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2SK764
Abstract: 2SK764A SC-65
Text: Pow er F-M O S F E T 2SK764, 2SK764A 2SK 764, 2 S K 7 6 4 A Silicon N-channel Power F-M OS F E T Package Dimensions • Features • Low ON resistance RDs on : RDS (on) = 0.5H (typ.) • High switching ra te : t f= 90ns (typ.) Unit: mm 15.5max. • No secondary breakdow n
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2SK764,
2SK764A
2SK764
0017D7fl
2SK764A
SC-65
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2SK769
Abstract: No abstract text available
Text: P o w e r F-M O S FET 2SK769 2SK769 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • Low ON resistance Km on : Ri* (on)• 0.65(1 (typ.) t t f c mm • High sw itching ra te : tf = 90n s (ty p .) • No secondary breakdown • High breakdow n voltage, large pow er
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2SK769
400Vt
2SK769
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2SK763
Abstract: 2SK763A
Text: P ow er F-MOS FET 2SK763, 2SK763A 2SK763, 2SK763A Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • Low ON re s is ta n c e RIn, o n : R w (on ) = 0 . 9 i ) ( ty p .) UtsL mm • High sw itch in g r a te : t ( = 5 0 n s (ty p .)
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2SK763,
2SK763A
2SK763
O-220
12SK763
vcs-10V.
VOD-150V
2SK763A
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2SK763
Abstract: 2SK763A FET PR 32
Text: P o w er F-MOS FET 2SK763, 2SK763A 2SK763, 2SK763A Silicon N-channel Power F-M O S FET • Features U P ackage D imensions • L o w O N r e s i s t a n c e R DS on : R DS (o n ) = 0 . 9 f t ( ty p .) Unit: mm • H igh sw itc h in g r a t e : tf = 5 0 n s (ty p .)
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2SK763,
2SK763A
2SK763
bR32B5B
17G7b
2SK763A
FET PR 32
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l33 tf
Abstract: 2SK760 td 1410 SC-65 G028
Text: P ow er F-MOS FET 2SK760 2SK760 Silicon N-channel Power F-MOS FET Package Dimensions • Features • L ow ON re s is ta n c e R Ds on : R ns (on) = 0 .2 2 i l (ty p .) • H igh sw itch in g r a te : t f= 120ns (ty p .) • N o se c o n d a ry b reak d o w n
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2SK760
120ns
SC-65
QQ17070
l33 tf
2SK760
td 1410
SC-65
G028
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TL 1084
Abstract: 2SK766 1084 fet
Text: P o w er F-MOS FET 2SK766 2SK766 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistance R ds on : R ds (on) = 2 .4 fl (typ.) • High switching rate : tf = 35ns (typ.) • No secondary breakdown • High breakdown voltage
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2SK766
O-220
TL 1084
2SK766
1084 fet
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2SK768
Abstract: SC-65
Text: P o w er F-MOS FET 2SK768 2SK768 Silicon N-channel Power F-M OS FET P ackage Dim ensions • Features • Low ON re sistan c e RDs on : RDs (on) = 0 .6 5 0 (typ.) • High sw itching ra te : tf= 9 0 n s (typ.) • No secondary breakdow n Unit: mm 15.5max
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2SK768
35fiS2
17DALi
2SK768
SC-65
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2SK767
Abstract: A1085-A
Text: Power F-MOS FET 2SK767 2SK767 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features Unit: mm • L o w O N r e s i s t a n c e R d s o n : R Ds (o n ) = 1 . 2 i l ( ty p .) • H ig h s w itc h in g r a t e : t f = 5 0 n s ( ty p .) • N o s e c o n d a r y b re a k d o w n
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2SK767
2SK767
A1085-A
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2SK765
Abstract: 2SK765A
Text: P o w e r F-MOS FET 2SK765, 2SK 765A 2SK765, 2SK765A Silicon N-channel Power F-MOS FET Package Dim ensions • Features • Low ON r e s is ta n c e Rds on : Rds (on) = 0 . 5 i i (ty p .) Unit: mm • High sw itch in g ra te : tf = 9 0 n s (ty p .) • No seco n d a ry breakdow n
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2SK765,
2SK765A
2SK765
2SK765A
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2SK766
Abstract: No abstract text available
Text: Power F-MOS FET 2SK766 2SK766 Silicon N-channel Power F-MOS FET • Package Dimensions ■Features • Low ON resistan ce R ds on : R Ds (on) = 2 .4 f l (ty p .) Unit: mm • High switching rate : tf = 35ns (typ.) • No secondary breakdown • High breakdown voltage
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2SK766
0170fll
99Z5ISZ
2SK766
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2SK769
Abstract: panasonic 2SC
Text: P o w er F-MOS FET 2SK7Ó9 2SK769 Silicon N-channel Power F-MOS FET • Features Package Dimensions • L ow O N r e s is ta n c e RD>, on : R DS (on) = 0 ,6 5 il (typ.) Unit: mm • H igh sw itch in g r a te : t f = 9 0 n s (ty p .) • N o se c o n d a ry b reak d o w n
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2SK769
2SK769
panasonic 2SC
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voltage 10v vdss 150v Id 50A mos fet
Abstract: 1085 CT 108A FET 2SK767
Text: P o w er F-MOS FET 2SK7Ó7 2SK767 Silicon N-channel Power F-MOS FET • Features ■ P ackage D im ensions • L ow ON re s is ta n c e R ub on : R DS (on) = 1 .2 f t (typ.) Unit: mm • H igh sw itch in g r a te : t f= 5 0 n s (ty p .) • N o se c o n d a ry b reak d o w n
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2SK767
Vus-25V
voltage 10v vdss 150v Id 50A mos fet
1085 CT
108A FET
2SK767
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2SK765A
Abstract: 2SK765
Text: P o w e r F-MOS FET 2SK765, 2SK 765A 2SK765, 2SK765A Silicon N-channel Power F-MOS FET Package Dimensions • Features • • • • Low ON resistance R ds on : R Ds (on) = 0 .5ft (typ.) High switching rate : tf= 9 0n s (typ.) No secondary breakdown High breakdown voltage, large power
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2SK765,
2SK765A
2SK765
2SK765A
--55----h
D0170a0
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td 1410
Abstract: 2SK761
Text: Power F-MOS FET 2SK761 2SK761 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON r e s is ta n c e R Db on : R ds (on) = 0 . 1 5 f i (ty p .) Unit: mm 5.2max. 15 5max. • High sw itch in g ra te : tf = 1 2 0 n s (ty p .) • No seco n d a ry breakdow n
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2SK761
120ns
td 1410
2SK761
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2SK762A
Abstract: 2SK762 vus3
Text: P o w e r F -M O ö r b I 2SK762, 2SK762A 2SK762, 2SK762A Silicon N-channel Power F-MOS FET • Features • L ow O N resistance Package Dimensions R i* o n : R i* (o n ) » 2 .0 1 1 (ty p .) Unit mm • H igb sw itc h in g r a t e : t i = 4 0 n s (ty p .)
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2SK762,
2SK762A
2SK762
VUS-320V.
2SK762
2SK762A
vus3
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2SK766
Abstract: No abstract text available
Text: Power F-MOS FET 2SK766 2SK766 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistance RM on : R OT (01 2 .4 0 (ty p .) Unit mm • High switching rate : U=35ns (ly p .) o J_Q 2mu _ *• - 5 7wn • No secondary breakdown
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2SK766
Tc-25t
O-22U
VW-20V.
VGS-10V.
2SK766
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2sk74
Abstract: 2SV 70 2SK764 2SK764A
Text: P o w e r F -M O S F E T 2SK764, 2SK764A 2SK764, 2SK764A Silicon N -channel Power F-MOS FET Package Dimensions • Features • Low ON re sistan c e R « <on : Roi on) = 0.5(1 (typ. • High switching ra te : l<= 90ns ( ty p . ) • No secondary breakdow n
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2SK764,
2SK764A
2SK764
Vcs-10V.
VDD-150V.
2sk74
2SV 70
2SK764A
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Untitled
Abstract: No abstract text available
Text: Power F-MOS FET 2SK768 2SK768 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON re sistan c e R Ds on : R Ds (on) = 0 .6 5 ft (typ.) Unit: mm • High sw itching ra te : tt = 90ns (ty p .) 15.5max • No secondary breakdow n 13.5max
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2SK768
QQ17QflS
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