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    2SK87 Price and Stock

    Toshiba America Electronic Components 2SK879-Y(TE85L,F)

    JFET N-CH 0.1W USM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK879-Y(TE85L,F) Cut Tape 19,965 1
    • 1 $0.65
    • 10 $0.4
    • 100 $0.65
    • 1000 $0.17448
    • 10000 $0.17448
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    2SK879-Y(TE85L,F) Digi-Reel 19,965 1
    • 1 $0.65
    • 10 $0.4
    • 100 $0.65
    • 1000 $0.17448
    • 10000 $0.17448
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    2SK879-Y(TE85L,F) Reel 15,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.11375
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    Mouser Electronics 2SK879-Y(TE85L,F) 1,039
    • 1 $0.55
    • 10 $0.358
    • 100 $0.237
    • 1000 $0.165
    • 10000 $0.113
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    Verical 2SK879-Y(TE85L,F) 4,781 72
    • 1 -
    • 10 -
    • 100 $0.4375
    • 1000 $0.1913
    • 10000 $0.135
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    Chip1Stop 2SK879-Y(TE85L,F) Cut Tape 4,781
    • 1 -
    • 10 $0.515
    • 100 $0.205
    • 1000 $0.139
    • 10000 $0.0986
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    EBV Elektronik 2SK879-Y(TE85L,F) 25 Weeks 3,000
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    Toshiba America Electronic Components 2SK879-GR(TE85L,F)

    JFET N-CH USM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK879-GR(TE85L,F) Cut Tape 7,480 1
    • 1 $0.65
    • 10 $0.4
    • 100 $0.65
    • 1000 $0.17448
    • 10000 $0.17448
    Buy Now
    2SK879-GR(TE85L,F) Digi-Reel 7,480 1
    • 1 $0.65
    • 10 $0.4
    • 100 $0.65
    • 1000 $0.17448
    • 10000 $0.17448
    Buy Now
    2SK879-GR(TE85L,F) Reel 6,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.14905
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    Mouser Electronics 2SK879-GR(TE85L,F) 3,800
    • 1 $0.55
    • 10 $0.358
    • 100 $0.237
    • 1000 $0.165
    • 10000 $0.115
    Buy Now
    Verical 2SK879-GR(TE85L,F) 2,705 84
    • 1 -
    • 10 -
    • 100 $0.3725
    • 1000 $0.1788
    • 10000 $0.1788
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    Newark 2SK879-GR(TE85L,F) Cut Tape 2,970 5
    • 1 $0.521
    • 10 $0.4
    • 100 $0.235
    • 1000 $0.138
    • 10000 $0.138
    Buy Now
    Avnet Asia 2SK879-GR(TE85L,F) 24 Weeks 3,000
    • 1 -
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    Chip1Stop 2SK879-GR(TE85L,F) Cut Tape 2,705
    • 1 -
    • 10 $0.432
    • 100 $0.202
    • 1000 $0.143
    • 10000 $0.143
    Buy Now

    Toshiba America Electronic Components 2SK879-GR(TE85R)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK879-GR(TE85R) 1,139
    • 1 $0.515
    • 10 $0.515
    • 100 $0.515
    • 1000 $0.206
    • 10000 $0.206
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    Toshiba America Electronic Components 2SK879

    Limited Stock - email
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian 2SK879
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    2SK87 Datasheets (53)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK87 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK87 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK870 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK870 Unknown FET Data Book Scan PDF
    2SK870 Panasonic Silicon N-Channel Power F-MOS FET Scan PDF
    2SK871 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK871 Unknown FET Data Book Scan PDF
    2SK871 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK872 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK872 Unknown FET Data Book Scan PDF
    2SK873 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK873 Unknown FET Data Book Scan PDF
    2SK874 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK874 Unknown FET Data Book Scan PDF
    2SK875 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK875 Unknown FET Data Book Scan PDF
    2SK876 NEC Semiconductor Selection Guide 1995 Original PDF
    2SK876 Unknown FET Data Book Scan PDF
    2SK879 Toshiba N-Channel MOSFET Original PDF
    2SK879 Unknown FET Data Book Scan PDF

    2SK87 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original
    PDF 2SK879

    condenser microphone

    Abstract: 2SK879
    Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original
    PDF 2SK879 condenser microphone 2SK879

    Untitled

    Abstract: No abstract text available
    Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original
    PDF 2SK879

    Untitled

    Abstract: No abstract text available
    Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original
    PDF 2SK879 SC-70

    2SK879

    Abstract: No abstract text available
    Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original
    PDF 2SK879 2SK879

    2SK879

    Abstract: No abstract text available
    Text: 2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications • Unit: mm High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1.0 nA max (VGS = −30 V)


    Original
    PDF 2SK879 2SK879

    Untitled

    Abstract: No abstract text available
    Text: 2SK878-2 Transistors N-Channel UHF/Microwave HEMT V BR DSS (V)5 V(BR)GSS (V)-3.5 I(D) Max. (A)100m P(D) Max. (W)340m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)15m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition)2 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.37m


    Original
    PDF 2SK878-2

    2SK816

    Abstract: 2sk895 2SK872 2SK875 2SK882 2SK896 2SK928 2SK880 2SK897 2SK900
    Text: - 74 - € m. % tt m « 'M m & ft ^ £ P d /P c h * K V E # * (V) £ * (A) % S fë fr * (W) Igss (max) (A) Vg s (V) ft ft (min) (max) Vps (A) (A) (V) i± (min) (max) Vd s (V) (V) (V) (Ta=Z5cC) (min) (typ) Vd s (S) (S) (V) ÏD (A) Id (A) 2SK872 NEC sw MOS


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    PDF 2SK872 2SK873 2SK874 2SK875 2SK876 100ns, 520nstyp 2SK901 310ns, 1550nstyp 2SK816 2sk895 2SK882 2SK896 2SK928 2SK880 2SK897 2SK900

    2SK876

    Abstract: No abstract text available
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION " 2SK876 The 2SK876 is N-channel MOS Field Effect Power Transistor PACKAGE DIM EN SIO N S designed for switching power supplies, DC-DC converters. FEATURES • in millimeters inches


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    PDF 2SK876 2SK876 1987M

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK879 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 9 <; K R 7 Q GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS Unit in mm 2.1 ± 0.1 1.25 + 0.1 • • High Breakdown Voltage : Vq/d s = —50V TTicrVi T n m i t T mr>pr l»nr»p


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    PDF 2SK879 --50V IE30VÏ 100kn, 120Hz)

    2SK879

    Abstract: UFF 100 04
    Text: TO SH IB A 2SK879 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK879 GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER Unit in mm MICROPHONE APPLICATIONS 2.1 ± 0.1 J • High Breakdown Voltage : V jj g= —50V • High Input Impedance


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    PDF 2SK879 100kn, 120Hz) SC-70 UFF 100 04

    2SK875

    Abstract: 2SK875A
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK875 The 2SK875 is N-channel MOS Field E ffe ct Power Transistor PACKAGE DIMENSIONS designed fo r switching power supplies DC-DC converters. FEATURES • in m illim e te rs inches


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    PDF 2SK875 2SK875 1987M 2SK875A

    2SK871

    Abstract: 2SK87 2sk8
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION I 2SK871 The 2SK871 is N-channel MOS Field E ffect Power Transis­ PACKAGE DIMENSIONS to r designed fo r switching powersupplies DC-DC converters. FEATURES in m illim eters inches


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    PDF 2SK871 2SK871 1987M 2SK87 2sk8

    2SK872

    Abstract: No abstract text available
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE D E S C R IP T IO N 2SK872 The 2S K 87 2 is N-channel MOS Field E ffect Power Transistor P A C K A G E D IM E N S IO N S designed fo r switching power supplies, DC-DC converters. FEATURES •


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    PDF 2SK872 2SK872 1987M

    2SK879

    Abstract: a63m
    Text: TO SH IBA 2SK879 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK879 Unit in mm GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS 2.1 ±0.1 1.25 ± 0.1 • • • High Breakdown Voltage : V q d § = —50V High Input Impedance : lQ gg= —l.OnA Max. (VQg= —30V)


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    PDF 2SK879 120Hz) SC-70 2SK879 a63m

    2SK87

    Abstract: No abstract text available
    Text: SILICON N CHANNEL JUNCTION TYPE 2SK879 Unit in mm G E N E R A L PURPOSE AND IM PEDANCE CONVERTER 2 . 1+ 0.1 AND CONDEN SER MICROPHONE A P P L I C A T I O N S . 1.2 5±0.1 • High Breakdown Voltage: • High Input Impedance: s VGDS 50V IG gg=-1.0nA Max.


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    PDF 2SK879 100kfi, 120Hz) SC-70 120Hz 2SK87

    2SK872

    Abstract: IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717
    Text: M O S Field Effect Pow er Transistor 2SK872 N f t ^ ' ° 7 -M O S i 2 S K 8 7 2 i, N T '* > X ^ <, X >f -y f- > / ?• > /''.iii1 !?. # f f l — MOS F E T ( - ¥ - f Ì ! mm *s'i*^ lT J3 tj , ¡ÉfJSlìSEX / D C - D C 3 > ^ '- ^ i:iilt t „ m ° V d ss


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    PDF 2SK872 2SK872 IRF 545 TRANSISTOR b 772 p UPC1100 TLE 6299 R MFE 521 261717

    2SK876

    Abstract: No abstract text available
    Text: M O S Field E ffe c t P o w e r T ra n s is to r N ft^ l/M ° 7 -M O S i 2SK876 i, x 'f D C -D C # mm h f f ^ ' 0l7 - M O S x - t > ffiK & i & <, FET « [ 2 FE T ] ( T O : mm f- > 7 * # l t t fc •;, S5f] iS x -i 3 > /< — 9 C f i t ' t o i t °V d s s


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    PDF 2SK876 2SK876Ã 2SK876

    TC-6300

    Abstract: 2SK873 miw dc-dc tc6300 Voscm-20
    Text: M O S Field Effect Pow er Transistor 2SK873 N f t ^ ^ - M O S FET xmm 2SK873 Ü , •c * > K < , x ^ 7 f > n i i i ; - M OS F E T t i T is d , ¡a s Jf x W & E I T O ! mm -i ■y-f > r-.iiri?;, D C -D C n > ✓ * -? t’ i i i S T 't o & f t °V dss


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    PDF 2SK873 TC-6300 2SK873 miw dc-dc tc6300 Voscm-20

    2SK870

    Abstract: s1,3/2iv SC-65
    Text: P o w er F-MOS FET 2SK870 2SK870 Silicon N-channel Power F-M O S FET Package Dimensions • Features • Low ON re sistan c e RDs on : R DS (on) = 0 .2 3 il (ty p .) • High switching ra te : tf= 140ns (typ.) • No secondary breakdow n Unit: mm 15.5m ax


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    PDF 2SK870 140ns bT3Sfl52 2SK870 s1,3/2iv SC-65

    2SK873

    Abstract: No abstract text available
    Text: NEC N-CHANNEL M O S FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK873 The 2SK873 is N-channel MOS Field Effect Power Transistor PACKAGE DIMENSIONS designed fo r switching power supplies, DC-DC converters. FEATURES • in m illim eters inches


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    PDF 2SK873 2SK873 1987M

    2SK870

    Abstract: SC-65
    Text: P ow er F-M O S F E T 2SK870 2SK870 Silicon N-channel Power F-M O S F E T • Package Dimensions ■ Features • Low ON resistan ce RDs on : R ds (on) = 0 .2 3 f i (ty p .) • High switching rate : tf = 140ns (typ.) • No secondary breakdown • High breakdown voltage, large power


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    PDF 2SK870 140ns Q0171ia 2SK870 SC-65

    2SK879

    Abstract: NA IJ5
    Text: TOSHIBA 2SK879 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK879 GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS Unit in mm 2.1 ± 0 .1 1.25 ± 0.1 • High Breakdown Voltage : V q d § = —50V • High Input Impedance


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    PDF 2SK879 100kil, 120Hz) SC-70 2SK879 NA IJ5

    2SK871

    Abstract: 2SK87
    Text: M O S B W f f - $ ] ^ s < r7 M O S Field Effect Pow er Transistor • /\°7 - M O S fe t if f f l 2SK871 i±, V t • ^ > ' ^ X / > hM^or7- MOS FET > f S Ì/ ljH S < , x -1“ V - f > 9 , 4 f t m m ¥ f ì : mm >'/ 0 3.2 + 0.2 f- > ^ S ïl, DC-DC a >s<- ? fcflüi tM".


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    PDF 2SK871 O00000 2SK871 2SK87